Conduction, reverse conduction and switching characteristics of GaN E-HEMT

Charlie Sørensen, Martin Lindblad Fogsgaard, Michael Noe Christiansen, Mads Kjeldal Graungaard, Jacob Bitsch Nørgaard, Christian Uhrenfeldt, Ionut Trintis

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

8 Citationer (Scopus)

Resumé

In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using a simulated double pulse test (DPT) whereas the conduction characteristics are measured in a curve tracer. The reverse conduction was found to be similar to the forward conduction with a voltage drop of Vth - Vgs(OFF). To decrease the parasitic impedance some considerations has been taken. These considerations are described and a model of the double pulse test is formulated.
OriginalsprogEngelsk
TitelProceedings of the IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015
Antal sider7
Udgivelses stedAachen, Germany
ForlagIEEE Press
Publikationsdatojun. 2015
Sider1-7
ISBN (Trykt)978-1-4799-8586-9
DOI
StatusUdgivet - jun. 2015
BegivenhedIEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015 - Pullman Aachen Quellenhof hotel, Aachen, Tyskland
Varighed: 22 sep. 201525 sep. 2015

Konference

KonferenceIEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015
LokationPullman Aachen Quellenhof hotel
LandTyskland
ByAachen
Periode22/09/201525/09/2015

Fingerprint

Gallium nitride
High electron mobility transistors
Transistors
Voltage drop

Citer dette

Sørensen, C., Lindblad Fogsgaard, M., Christiansen, M. N., Kjeldal Graungaard, M., Nørgaard, J. B., Uhrenfeldt, C., & Trintis, I. (2015). Conduction, reverse conduction and switching characteristics of GaN E-HEMT. I Proceedings of the IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015 (s. 1-7). Aachen, Germany: IEEE Press. https://doi.org/10.1109/PEDG.2015.7223051
Sørensen, Charlie ; Lindblad Fogsgaard, Martin ; Christiansen, Michael Noe ; Kjeldal Graungaard, Mads ; Nørgaard, Jacob Bitsch ; Uhrenfeldt, Christian ; Trintis, Ionut. / Conduction, reverse conduction and switching characteristics of GaN E-HEMT. Proceedings of the IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015. Aachen, Germany : IEEE Press, 2015. s. 1-7
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title = "Conduction, reverse conduction and switching characteristics of GaN E-HEMT",
abstract = "In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using a simulated double pulse test (DPT) whereas the conduction characteristics are measured in a curve tracer. The reverse conduction was found to be similar to the forward conduction with a voltage drop of Vth - Vgs(OFF). To decrease the parasitic impedance some considerations has been taken. These considerations are described and a model of the double pulse test is formulated.",
keywords = "Switching loss, Gallium nitride, Current-voltage characteristics, Loss measurements, DC-AC power converters, Pulse width modulation converters, HEMTs, Transistors",
author = "Charlie S{\o}rensen and {Lindblad Fogsgaard}, Martin and Christiansen, {Michael Noe} and {Kjeldal Graungaard}, Mads and N{\o}rgaard, {Jacob Bitsch} and Christian Uhrenfeldt and Ionut Trintis",
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Sørensen, C, Lindblad Fogsgaard, M, Christiansen, MN, Kjeldal Graungaard, M, Nørgaard, JB, Uhrenfeldt, C & Trintis, I 2015, Conduction, reverse conduction and switching characteristics of GaN E-HEMT. i Proceedings of the IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015. IEEE Press, Aachen, Germany, s. 1-7, IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015, Aachen, Tyskland, 22/09/2015. https://doi.org/10.1109/PEDG.2015.7223051

Conduction, reverse conduction and switching characteristics of GaN E-HEMT. / Sørensen, Charlie; Lindblad Fogsgaard, Martin; Christiansen, Michael Noe; Kjeldal Graungaard, Mads; Nørgaard, Jacob Bitsch; Uhrenfeldt, Christian; Trintis, Ionut.

Proceedings of the IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015. Aachen, Germany : IEEE Press, 2015. s. 1-7.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

TY - GEN

T1 - Conduction, reverse conduction and switching characteristics of GaN E-HEMT

AU - Sørensen, Charlie

AU - Lindblad Fogsgaard, Martin

AU - Christiansen, Michael Noe

AU - Kjeldal Graungaard, Mads

AU - Nørgaard, Jacob Bitsch

AU - Uhrenfeldt, Christian

AU - Trintis, Ionut

PY - 2015/6

Y1 - 2015/6

N2 - In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using a simulated double pulse test (DPT) whereas the conduction characteristics are measured in a curve tracer. The reverse conduction was found to be similar to the forward conduction with a voltage drop of Vth - Vgs(OFF). To decrease the parasitic impedance some considerations has been taken. These considerations are described and a model of the double pulse test is formulated.

AB - In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using a simulated double pulse test (DPT) whereas the conduction characteristics are measured in a curve tracer. The reverse conduction was found to be similar to the forward conduction with a voltage drop of Vth - Vgs(OFF). To decrease the parasitic impedance some considerations has been taken. These considerations are described and a model of the double pulse test is formulated.

KW - Switching loss

KW - Gallium nitride

KW - Current-voltage characteristics

KW - Loss measurements

KW - DC-AC power converters

KW - Pulse width modulation converters

KW - HEMTs

KW - Transistors

U2 - 10.1109/PEDG.2015.7223051

DO - 10.1109/PEDG.2015.7223051

M3 - Article in proceeding

SN - 978-1-4799-8586-9

SP - 1

EP - 7

BT - Proceedings of the IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015

PB - IEEE Press

CY - Aachen, Germany

ER -

Sørensen C, Lindblad Fogsgaard M, Christiansen MN, Kjeldal Graungaard M, Nørgaard JB, Uhrenfeldt C et al. Conduction, reverse conduction and switching characteristics of GaN E-HEMT. I Proceedings of the IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015. Aachen, Germany: IEEE Press. 2015. s. 1-7 https://doi.org/10.1109/PEDG.2015.7223051