Conduction, reverse conduction and switching characteristics of GaN E-HEMT

Charlie Sørensen; Martin Lindblad Fogsgaard; Michael Noe Christiansen; Mads Kjeldal Graungaard; Jacob Bitsch Nørgaard; Christian Uhrenfeldt; Ionut Trintis

doi:10.1109/PEDG.2015.7223051

Conduction, reverse conduction and switching characteristics of GaN E-HEMT

Charlie Sørensen
, Martin Lindblad Fogsgaard
, Michael Noe Christiansen
, Mads Kjeldal Graungaard
, Jacob Bitsch Nørgaard
, Christian Uhrenfeldt
, Ionut Trintis

AAU Energi

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

49 Citationer (Scopus)

Abstract

In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using a simulated double pulse test (DPT) whereas the conduction characteristics are measured in a curve tracer. The reverse conduction was found to be similar to the forward conduction with a voltage drop of Vth - Vgs(OFF). To decrease the parasitic impedance some considerations has been taken. These considerations are described and a model of the double pulse test is formulated.

Originalsprog	Engelsk
Titel	Proceedings of the IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015
Antal sider	7
Udgivelsessted	Aachen, Germany
Forlag	IEEE Press
Publikationsdato	jun. 2015
Sider	1-7
ISBN (Trykt)	978-1-4799-8586-9
DOI	https://doi.org/10.1109/PEDG.2015.7223051
Status	Udgivet - jun. 2015
Begivenhed	IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015 - Pullman Aachen Quellenhof hotel, Aachen, Tyskland Varighed: 22 sep. 2015 → 25 sep. 2015

Konference

Konference	IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015
Lokation	Pullman Aachen Quellenhof hotel
Land/Område	Tyskland
By	Aachen
Periode	22/09/2015 → 25/09/2015

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10.1109/PEDG.2015.7223051

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Citationsformater

Sørensen, C., Lindblad Fogsgaard, M., Christiansen, M. N., Kjeldal Graungaard, M., Nørgaard, J. B., Uhrenfeldt, C., & Trintis, I. (2015). Conduction, reverse conduction and switching characteristics of GaN E-HEMT. I Proceedings of the IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015 (s. 1-7). IEEE Press. https://doi.org/10.1109/PEDG.2015.7223051

@inproceedings{462b03ccbdb44eaba6764dd514be3289,

title = "Conduction, reverse conduction and switching characteristics of GaN E-HEMT",

abstract = "In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using a simulated double pulse test (DPT) whereas the conduction characteristics are measured in a curve tracer. The reverse conduction was found to be similar to the forward conduction with a voltage drop of Vth - Vgs(OFF). To decrease the parasitic impedance some considerations has been taken. These considerations are described and a model of the double pulse test is formulated.",

keywords = "Switching loss, Gallium nitride, Current-voltage characteristics, Loss measurements, DC-AC power converters, Pulse width modulation converters, HEMTs, Transistors",

author = "Charlie S{\o}rensen and \{Lindblad Fogsgaard\}, Martin and Christiansen, \{Michael Noe\} and \{Kjeldal Graungaard\}, Mads and N{\o}rgaard, \{Jacob Bitsch\} and Christian Uhrenfeldt and Ionut Trintis",

year = "2015",

month = jun,

doi = "10.1109/PEDG.2015.7223051",

language = "English",

isbn = "978-1-4799-8586-9",

pages = "1--7",

booktitle = "Proceedings of the IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015",

publisher = "IEEE Press",

note = "IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015, PEDG2015 ; Conference date: 22-09-2015 Through 25-09-2015",

}

Sørensen, C, Lindblad Fogsgaard, M, Christiansen, MN, Kjeldal Graungaard, M, Nørgaard, JB, Uhrenfeldt, C & Trintis, I 2015, Conduction, reverse conduction and switching characteristics of GaN E-HEMT. i Proceedings of the IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015. IEEE Press, Aachen, Germany, s. 1-7, IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015, Aachen, Tyskland, 22/09/2015. https://doi.org/10.1109/PEDG.2015.7223051

Conduction, reverse conduction and switching characteristics of GaN E-HEMT. / Sørensen, Charlie; Lindblad Fogsgaard, Martin; Christiansen, Michael Noe et al.
Proceedings of the IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015. Aachen, Germany: IEEE Press, 2015. s. 1-7.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Conduction, reverse conduction and switching characteristics of GaN E-HEMT

AU - Sørensen, Charlie

AU - Lindblad Fogsgaard, Martin

AU - Christiansen, Michael Noe

AU - Kjeldal Graungaard, Mads

AU - Nørgaard, Jacob Bitsch

AU - Uhrenfeldt, Christian

AU - Trintis, Ionut

PY - 2015/6

Y1 - 2015/6

N2 - In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using a simulated double pulse test (DPT) whereas the conduction characteristics are measured in a curve tracer. The reverse conduction was found to be similar to the forward conduction with a voltage drop of Vth - Vgs(OFF). To decrease the parasitic impedance some considerations has been taken. These considerations are described and a model of the double pulse test is formulated.

AB - In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using a simulated double pulse test (DPT) whereas the conduction characteristics are measured in a curve tracer. The reverse conduction was found to be similar to the forward conduction with a voltage drop of Vth - Vgs(OFF). To decrease the parasitic impedance some considerations has been taken. These considerations are described and a model of the double pulse test is formulated.

KW - Switching loss

KW - Gallium nitride

KW - Current-voltage characteristics

KW - Loss measurements

KW - DC-AC power converters

KW - Pulse width modulation converters

KW - HEMTs

KW - Transistors

U2 - 10.1109/PEDG.2015.7223051

DO - 10.1109/PEDG.2015.7223051

M3 - Article in proceeding

SN - 978-1-4799-8586-9

SP - 1

EP - 7

BT - Proceedings of the IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015

PB - IEEE Press

CY - Aachen, Germany

T2 - IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015

Y2 - 22 September 2015 through 25 September 2015

ER -

Sørensen C, Lindblad Fogsgaard M, Christiansen MN, Kjeldal Graungaard M, Nørgaard JB, Uhrenfeldt C et al. Conduction, reverse conduction and switching characteristics of GaN E-HEMT. I Proceedings of the IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2015. Aachen, Germany: IEEE Press. 2015. s. 1-7 doi: 10.1109/PEDG.2015.7223051

Conduction, reverse conduction and switching characteristics of GaN E-HEMT

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