Dealing with leakage current in TLM and CTLM structures with vertical junction isolation

Svetlana N. Bystrova, Sander M. Smits, Johan H. Klootwijk, Rob A.M. Wolters, Alexey Y. Kovalgin, Lis K. Nanver, Jurriaan Schmitz

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2 Citationer (Scopus)

Abstract

Transmission line method (TLM) structures are often employed to extract contact resistivity between a metal and a doped semiconductor region. In this article we treat the situation where the doped region is junction-isolated from the substrate. The junction isolation may be leaky resulting in erroneous parameter extraction. The effect of junction leakage is treated both theoretically and through exemplary wafer-level CTLM measurement results on photovoltaic cells (solar cells) and epi-wafer samples. This paper describes how reliable contact resistivity values can be obtained using the transmission line method on junction isolated structures.

OriginalsprogEngelsk
Titel2017 International Conference of Microelectronic Test Structures, ICMTS 2017
ForlagIEEE
Publikationsdato20 jun. 2017
Artikelnummer7954257
ISBN (Elektronisk)978-1-5090-3615-8
DOI
StatusUdgivet - 20 jun. 2017
Begivenhed2017 International Conference of Microelectronic Test Structures, ICMTS 2017 - Grenoble, Frankrig
Varighed: 27 mar. 201730 mar. 2017

Konference

Konference2017 International Conference of Microelectronic Test Structures, ICMTS 2017
Land/OmrådeFrankrig
ByGrenoble
Periode27/03/201730/03/2017

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