Abstract
Transmission line method (TLM) structures are often employed to extract contact resistivity between a metal and a doped semiconductor region. In this article we treat the situation where the doped region is junction-isolated from the substrate. The junction isolation may be leaky resulting in erroneous parameter extraction. The effect of junction leakage is treated both theoretically and through exemplary wafer-level CTLM measurement results on photovoltaic cells (solar cells) and epi-wafer samples. This paper describes how reliable contact resistivity values can be obtained using the transmission line method on junction isolated structures.
Originalsprog | Engelsk |
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Titel | 2017 International Conference of Microelectronic Test Structures, ICMTS 2017 |
Forlag | IEEE |
Publikationsdato | 20 jun. 2017 |
Artikelnummer | 7954257 |
ISBN (Elektronisk) | 978-1-5090-3615-8 |
DOI | |
Status | Udgivet - 20 jun. 2017 |
Begivenhed | 2017 International Conference of Microelectronic Test Structures, ICMTS 2017 - Grenoble, Frankrig Varighed: 27 mar. 2017 → 30 mar. 2017 |
Konference
Konference | 2017 International Conference of Microelectronic Test Structures, ICMTS 2017 |
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Land/Område | Frankrig |
By | Grenoble |
Periode | 27/03/2017 → 30/03/2017 |