Defect-free GeSn alloy strips on Si by Sn self-catalyzed MBE method

K. Yu; D. L. Zhang; H. Cong; X. Zhang; Y. Zhao; B. W. Cheng; C. B. Li

doi:10.1109/GROUP4.2016.7739080

Defect-free GeSn alloy strips on Si by Sn self-catalyzed MBE method

K. Yu, D. L. Zhang, H. Cong, X. Zhang, Y. Zhao, B. W. Cheng, C. B. Li

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

3 Citationer (Scopus)

Abstract

The lateral growth of GeSn strips on Si(111) has been successfully achieved by Sn self-catalyzed MBE method. The effect of Sn catalysts on morphology and the quality of the materials were studied. The high quality GeSn on Si will contribute to development of Si-based optoelectronics.

Originalsprog	Engelsk
Titel	2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016
Antal sider	2
Forlag	IEEE Computer Society Press
Publikationsdato	8 nov. 2016
Sider	34-35
Artikelnummer	7739080
ISBN (Elektronisk)	9781509019038
DOI	https://doi.org/10.1109/GROUP4.2016.7739080
Status	Udgivet - 8 nov. 2016
Begivenhed	13th IEEE International Conference on Group IV Photonics, GFP 2016 - Shanghai, Kina Varighed: 24 aug. 2016 → 26 aug. 2016

Konference

Konference	13th IEEE International Conference on Group IV Photonics, GFP 2016
Land/Område	Kina
By	Shanghai
Periode	24/08/2016 → 26/08/2016
Sponsor	Intel, Luceda Photonics, Lumerical Solutions, Inc., Synopsys Inc.

Navn	IEEE International Conference on Group IV Photonics GFP
Vol/bind	2016-November
ISSN	1949-2081

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Publisher Copyright:
© 2016 IEEE.

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Citationsformater

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title = "Defect-free GeSn alloy strips on Si by Sn self-catalyzed MBE method",

abstract = "The lateral growth of GeSn strips on Si(111) has been successfully achieved by Sn self-catalyzed MBE method. The effect of Sn catalysts on morphology and the quality of the materials were studied. The high quality GeSn on Si will contribute to development of Si-based optoelectronics.",

keywords = "GeSn, MBE, Si-based, Sn self-catalyzed",

author = "K. Yu and Zhang, {D. L.} and H. Cong and X. Zhang and Y. Zhao and Cheng, {B. W.} and Li, {C. B.}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 13th IEEE International Conference on Group IV Photonics, GFP 2016 ; Conference date: 24-08-2016 Through 26-08-2016",

year = "2016",

month = nov,

day = "8",

doi = "10.1109/GROUP4.2016.7739080",

language = "English",

series = "IEEE International Conference on Group IV Photonics GFP",

publisher = "IEEE Computer Society Press",

pages = "34--35",

booktitle = "2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016",

address = "United States",

}

Yu, K, Zhang, DL, Cong, H, Zhang, X, Zhao, Y, Cheng, BW & Li, CB 2016, Defect-free GeSn alloy strips on Si by Sn self-catalyzed MBE method. i 2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016., 7739080, IEEE Computer Society Press, IEEE International Conference on Group IV Photonics GFP, bind 2016-November, s. 34-35, 13th IEEE International Conference on Group IV Photonics, GFP 2016, Shanghai, Kina, 24/08/2016. https://doi.org/10.1109/GROUP4.2016.7739080

Defect-free GeSn alloy strips on Si by Sn self-catalyzed MBE method. / Yu, K.; Zhang, D. L.; Cong, H. et al.
2016 IEEE 13th International Conference on Group IV Photonics, GFP 2016. IEEE Computer Society Press, 2016. s. 34-35 7739080 (IEEE International Conference on Group IV Photonics GFP, Bind 2016-November).

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

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AU - Cong, H.

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AU - Zhao, Y.

AU - Cheng, B. W.

AU - Li, C. B.

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AB - The lateral growth of GeSn strips on Si(111) has been successfully achieved by Sn self-catalyzed MBE method. The effect of Sn catalysts on morphology and the quality of the materials were studied. The high quality GeSn on Si will contribute to development of Si-based optoelectronics.

KW - GeSn

KW - MBE

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M3 - Article in proceeding

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T3 - IEEE International Conference on Group IV Photonics GFP

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Y2 - 24 August 2016 through 26 August 2016

ER -

Defect-free GeSn alloy strips on Si by Sn self-catalyzed MBE method

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