Demonstration of 7.2 kV / 200 A Switching Performance for a 10 kV SiC MOSFET Half-bridge Power Module

Gao Liu; Zhixing Yan; Jannick Kjær Jørgensen; Morten Rahr Nielsen; Benjamin Futtrup Kjærsgaard; Nianzun Qi; Thore Stig Aunsborg; Bjørn Rannestad; Asger Bjørn Jørgensen; Hongbo Zhao; Michael Møller Bech; Stig Munk-Nielsen

doi:10.1109/WiPDA62103.2024.10773070

Demonstration of 7.2 kV / 200 A Switching Performance for a 10 kV SiC MOSFET Half-bridge Power Module

Gao Liu, Zhixing Yan, Jannick Kjær Jørgensen, Morten Rahr Nielsen, Benjamin Futtrup Kjærsgaard, Nianzun Qi, Thore Stig Aunsborg, Bjørn Rannestad, Asger Bjørn Jørgensen, Hongbo Zhao, Michael Møller Bech, Stig Munk-Nielsen

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

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Abstract

Multi-chip power modules may suffer from increased switching losses and severe oscillation issues during switching transients due to e.g. parasitic capacitances and imbalances within the power module. This paper presents the switching performance measured at 7.2 kV/ 200 A of both high-side and low-side in an 8-chip (4+4) half-bridge power module based on 10 kV SiC MOSFETs in a double pulse test (DPT) setup. The demonstrated power module obtains almost a doubling of the current per chip ratio compared to the closest competitors with 50 A per chip. The clean switching and balanced switching loss between high-side and low-side switches are obtained with an optimized power module layout.

Originalsprog	Engelsk
Titel	2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
Antal sider	5
Forlag	IEEE (Institute of Electrical and Electronics Engineers)
Publikationsdato	4 nov. 2024
DOI	https://doi.org/10.1109/WiPDA62103.2024.10773070
Status	Udgivet - 4 nov. 2024
Begivenhed	2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) - Dayton, USA Varighed: 4 nov. 2024 → 6 nov. 2024 Konferencens nummer: 11 https://wipda.org/

Konference

Konference	2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
Nummer	11
Land/Område	USA
By	Dayton
Periode	04/11/2024 → 06/11/2024
Internetadresse	https://wipda.org/

Adgang til dokumentet

10.1109/WiPDA62103.2024.10773070

Demonstration_of_7_2_kV_200_A_Switching_Performance_for_a_10_kV_SiC_MOSFET_Half_bridge_Power_ModuleAccepteret manuskript, 4,3 MBLicens: CC BY 4.0

AUB Link

Søg efter materialet i Aalborg Universitetsbiblioteks søgemaskine

MVolt: Medium Voltage Power Electronics for Wind Systems
Munk-Nielsen, S. (PI (principal investigator)), Uhrenfeldt, C. (CoI (co-investigator)), Jørgensen, A. B. (CoI (co-investigator)), Jørgensen, J. K. (CoI (co-investigator)), Beczkowski, S. (Projektdeltager), Bech, M. M. (Projektdeltager), Spender-Andersen, G. (Projektdeltager), Lascu, C. (Projektdeltager), Zhao, H. (Projektdeltager), Dalal, D. N. (Projektdeltager), Kjærsgaard, B. F. (Projektdeltager), Aunsborg, T. S. (Projektdeltager), Jacobsen, J. (Projektdeltager), Mishra, P. (Projektdeltager) & Steffensen, B. (Projektkoordinator)
Innovationsfonden
01/10/2020 → 30/09/2024
Projekter: Projekt › Forskning

WiPDA 2024 Best Paper Award
Liu, G. (Modtager), Yan, Z. (Modtager), Jørgensen, J. K. (Modtager), Nielsen, M. R. (Modtager), Kjærsgaard, B. F. (Modtager), Qi, N. (Modtager), Aunsborg, T. S. (Modtager), Rannestad, B. (Modtager), Jørgensen, A. B. (Modtager), Zhao, H. (Modtager), Bech, M. M. (Modtager) & Munk-Nielsen, S. (Modtager), 6 nov. 2024
Pris: Konferencepriser

Citationsformater

Liu, G., Yan, Z., Jørgensen, J. K., Nielsen, M. R., Kjærsgaard, B. F., Qi, N., Aunsborg, T. S., Rannestad, B., Jørgensen, A. B., Zhao, H., Bech, M. M., & Munk-Nielsen, S. (2024). Demonstration of 7.2 kV / 200 A Switching Performance for a 10 kV SiC MOSFET Half-bridge Power Module. I 2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) IEEE (Institute of Electrical and Electronics Engineers). https://doi.org/10.1109/WiPDA62103.2024.10773070

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title = "Demonstration of 7.2 kV / 200 A Switching Performance for a 10 kV SiC MOSFET Half-bridge Power Module",

abstract = "Multi-chip power modules may suffer from increased switching losses and severe oscillation issues during switching transients due to e.g. parasitic capacitances and imbalances within the power module. This paper presents the switching performance measured at 7.2 kV/ 200 A of both high-side and low-side in an 8-chip (4+4) half-bridge power module based on 10 kV SiC MOSFETs in a double pulse test (DPT) setup. The demonstrated power module obtains almost a doubling of the current per chip ratio compared to the closest competitors with 50 A per chip. The clean switching and balanced switching loss between high-side and low-side switches are obtained with an optimized power module layout.",

author = "Gao Liu and Zhixing Yan and J{\o}rgensen, {Jannick Kj{\ae}r} and Nielsen, {Morten Rahr} and Kj{\ae}rsgaard, {Benjamin Futtrup} and Nianzun Qi and Aunsborg, {Thore Stig} and Bj{\o}rn Rannestad and J{\o}rgensen, {Asger Bj{\o}rn} and Hongbo Zhao and Bech, {Michael M{\o}ller} and Stig Munk-Nielsen",

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doi = "10.1109/WiPDA62103.2024.10773070",

language = "English",

booktitle = "2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)",

publisher = "IEEE (Institute of Electrical and Electronics Engineers)",

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Liu, G , Yan, Z , Jørgensen, JK , Nielsen, MR , Kjærsgaard, BF , Qi, N , Aunsborg, TS, Rannestad, B, Jørgensen, AB , Zhao, H , Bech, MM & Munk-Nielsen, S 2024, Demonstration of 7.2 kV / 200 A Switching Performance for a 10 kV SiC MOSFET Half-bridge Power Module. i 2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA). IEEE (Institute of Electrical and Electronics Engineers), 2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA), Dayton, Ohio, USA, 04/11/2024. https://doi.org/10.1109/WiPDA62103.2024.10773070

Demonstration of 7.2 kV / 200 A Switching Performance for a 10 kV SiC MOSFET Half-bridge Power Module. / Liu, Gao ; Yan, Zhixing ; Jørgensen, Jannick Kjær et al.
2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA). IEEE (Institute of Electrical and Electronics Engineers), 2024.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Demonstration of 7.2 kV / 200 A Switching Performance for a 10 kV SiC MOSFET Half-bridge Power Module

AU - Liu, Gao

AU - Yan, Zhixing

AU - Jørgensen, Jannick Kjær

AU - Nielsen, Morten Rahr

AU - Kjærsgaard, Benjamin Futtrup

AU - Qi, Nianzun

AU - Aunsborg, Thore Stig

AU - Rannestad, Bjørn

AU - Jørgensen, Asger Bjørn

AU - Zhao, Hongbo

AU - Bech, Michael Møller

AU - Munk-Nielsen, Stig

N1 - Conference code: 11

PY - 2024/11/4

Y1 - 2024/11/4

N2 - Multi-chip power modules may suffer from increased switching losses and severe oscillation issues during switching transients due to e.g. parasitic capacitances and imbalances within the power module. This paper presents the switching performance measured at 7.2 kV/ 200 A of both high-side and low-side in an 8-chip (4+4) half-bridge power module based on 10 kV SiC MOSFETs in a double pulse test (DPT) setup. The demonstrated power module obtains almost a doubling of the current per chip ratio compared to the closest competitors with 50 A per chip. The clean switching and balanced switching loss between high-side and low-side switches are obtained with an optimized power module layout.

AB - Multi-chip power modules may suffer from increased switching losses and severe oscillation issues during switching transients due to e.g. parasitic capacitances and imbalances within the power module. This paper presents the switching performance measured at 7.2 kV/ 200 A of both high-side and low-side in an 8-chip (4+4) half-bridge power module based on 10 kV SiC MOSFETs in a double pulse test (DPT) setup. The demonstrated power module obtains almost a doubling of the current per chip ratio compared to the closest competitors with 50 A per chip. The clean switching and balanced switching loss between high-side and low-side switches are obtained with an optimized power module layout.

U2 - 10.1109/WiPDA62103.2024.10773070

DO - 10.1109/WiPDA62103.2024.10773070

M3 - Article in proceeding

BT - 2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)

PB - IEEE (Institute of Electrical and Electronics Engineers)

T2 - 2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)

Y2 - 4 November 2024 through 6 November 2024

ER -

Demonstration of 7.2 kV / 200 A Switching Performance for a 10 kV SiC MOSFET Half-bridge Power Module

Abstract

Konference

Adgang til dokumentet

AUB Link

Fingeraftryk

Projekter

MVolt: Medium Voltage Power Electronics for Wind Systems

Priser

WiPDA 2024 Best Paper Award

Citationsformater