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Demonstration of 7.2 kV / 200 A Switching Performance for a 10 kV SiC MOSFET Half-bridge Power Module

Gao Liu, Zhixing Yan, Jannick Kjær Jørgensen, Morten Rahr Nielsen, Benjamin Futtrup Kjærsgaard, Nianzun Qi, Thore Stig Aunsborg, Bjørn Rannestad, Asger Bjørn Jørgensen, Hongbo Zhao, Michael Møller Bech, Stig Munk-Nielsen

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Abstract

Multi-chip power modules may suffer from increased switching losses and severe oscillation issues during switching transients due to e.g. parasitic capacitances and imbalances within the power module. This paper presents the switching performance measured at 7.2 kV/ 200 A of both high-side and low-side in an 8-chip (4+4) half-bridge power module based on 10 kV SiC MOSFETs in a double pulse test (DPT) setup. The demonstrated power module obtains almost a doubling of the current per chip ratio compared to the closest competitors with 50 A per chip. The clean switching and balanced switching loss between high-side and low-side switches are obtained with an optimized power module layout.
OriginalsprogEngelsk
Titel2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
Antal sider5
ForlagIEEE (Institute of Electrical and Electronics Engineers)
Publikationsdato4 nov. 2024
Artikelnummer10773070
ISBN (Trykt)979-8-3503-7561-9
ISBN (Elektronisk)979-8-3503-7560-2
DOI
StatusUdgivet - 4 nov. 2024
Begivenhed2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) - Dayton, USA
Varighed: 4 nov. 20246 nov. 2024
Konferencens nummer: 11
https://wipda.org/

Konference

Konference2024 IEEE 11th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
Nummer11
Land/OmrådeUSA
ByDayton
Periode04/11/202406/11/2024
Internetadresse
NavnIEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
ISSN2641-8274

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