Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

Dipen Narendra Dalal; Hongbo Zhao; Jannick Kjær Jørgensen; Nicklas Christensen; Asger Bjørn Jørgensen; Szymon Michal Beczkowski; Christian Uhrenfeldt; Stig Munk-Nielsen

doi:10.1109/APEC39645.2020.9124441

Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

Dipen Narendra Dalal, Hongbo Zhao, Jannick Kjær Jørgensen, Nicklas Christensen, Asger Bjørn Jørgensen, Szymon Michal Beczkowski, Christian Uhrenfeldt, Stig Munk-Nielsen

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

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Abstrakt

This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.

Originalsprog	Engelsk
Titel	2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Antal sider	7
Udgivelsessted	New Orleans, LA, USA
Forlag	IEEE Press
Publikationsdato	jun. 2020
Sider	2751-2757
Artikelnummer	9124441
ISBN (Trykt)	978-1-7281-4830-4
ISBN (Elektronisk)	978-1-7281-4829-8
DOI	https://doi.org/10.1109/APEC39645.2020.9124441
Status	Udgivet - jun. 2020
Begivenhed	2020 IEEE Applied Power Electronics Conference and Exposition (APEC) - New Orleans, LA, USA Varighed: 15 mar. 2020 → 19 mar. 2020

Konference

Konference	2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Land/Område	USA
By	New Orleans, LA
Periode	15/03/2020 → 19/03/2020

Navn	IEEE Applied Power Electronics Conference and Exposition (APEC)
ISSN	1048-2334

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10.1109/APEC39645.2020.9124441

Demonstration of 10 kV SiC MOSFET enabled MV power stackAccepteret manuskript, 2,33 MB

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1 Ph.d.-afhandling

Modeling and Reducing the Parasitic Capacitance in Medium-Voltage Inductors
Zhao, H., 2021, Aalborg Universitetsforlag. 103 s. (Ph.d.-serien for Det Ingeniør- og Naturvidenskabelige Fakultet, Aalborg Universitet).
Publikation: Bog/antologi/afhandling/rapport › Ph.d.-afhandling

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Citationsformater

Dalal, D. N., Zhao, H., Jørgensen, J. K., Christensen, N., Jørgensen, A. B., Beczkowski, S. M., Uhrenfeldt, C., & Munk-Nielsen, S. (2020). Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack. I 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) (s. 2751-2757). [9124441] IEEE Press. IEEE Applied Power Electronics Conference and Exposition (APEC) https://doi.org/10.1109/APEC39645.2020.9124441

@inproceedings{500957a2e03542e8af029909d940ee43,

title = "Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack",

abstract = "This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.",

keywords = "10 kV SiC MOSFETs, medium voltage (MV), power stack, two-level voltage source converter (2L-VSC)",

author = "Dalal, {Dipen Narendra} and Hongbo Zhao and J{\o}rgensen, {Jannick Kj{\ae}r} and Nicklas Christensen and J{\o}rgensen, {Asger Bj{\o}rn} and Beczkowski, {Szymon Michal} and Christian Uhrenfeldt and Stig Munk-Nielsen",

year = "2020",

month = jun,

doi = "10.1109/APEC39645.2020.9124441",

language = "English",

isbn = "978-1-7281-4830-4",

series = "IEEE Applied Power Electronics Conference and Exposition (APEC)",

publisher = "IEEE Press",

pages = "2751--2757",

booktitle = "2020 IEEE Applied Power Electronics Conference and Exposition (APEC)",

note = "2020 IEEE Applied Power Electronics Conference and Exposition (APEC) ; Conference date: 15-03-2020 Through 19-03-2020",

}

Dalal, DN , Zhao, H , Jørgensen, JK, Christensen, N, Jørgensen, AB , Beczkowski, SM , Uhrenfeldt, C & Munk-Nielsen, S 2020, Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack. i 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)., 9124441, IEEE Press, New Orleans, LA, USA, IEEE Applied Power Electronics Conference and Exposition (APEC), s. 2751-2757, 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), New Orleans, LA, USA, 15/03/2020. https://doi.org/10.1109/APEC39645.2020.9124441

Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack. / Dalal, Dipen Narendra ; Zhao, Hongbo ; Jørgensen, Jannick Kjær et al.

2020 IEEE Applied Power Electronics Conference and Exposition (APEC). New Orleans, LA, USA : IEEE Press, 2020. s. 2751-2757 9124441 (IEEE Applied Power Electronics Conference and Exposition (APEC)).

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

AU - Dalal, Dipen Narendra

AU - Zhao, Hongbo

AU - Jørgensen, Jannick Kjær

AU - Christensen, Nicklas

AU - Jørgensen, Asger Bjørn

AU - Beczkowski, Szymon Michal

AU - Uhrenfeldt, Christian

AU - Munk-Nielsen, Stig

PY - 2020/6

Y1 - 2020/6

N2 - This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.

AB - This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.

KW - 10 kV SiC MOSFETs

KW - medium voltage (MV)

KW - power stack

KW - two-level voltage source converter (2L-VSC)

UR - http://www.scopus.com/inward/record.url?scp=85087790590&partnerID=8YFLogxK

U2 - 10.1109/APEC39645.2020.9124441

DO - 10.1109/APEC39645.2020.9124441

M3 - Article in proceeding

SN - 978-1-7281-4830-4

T3 - IEEE Applied Power Electronics Conference and Exposition (APEC)

SP - 2751

EP - 2757

BT - 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

PB - IEEE Press

CY - New Orleans, LA, USA

T2 - 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

Y2 - 15 March 2020 through 19 March 2020

ER -

Dalal DN , Zhao H , Jørgensen JK, Christensen N, Jørgensen AB , Beczkowski SM et al. Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack. I 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). New Orleans, LA, USA: IEEE Press. 2020. s. 2751-2757. 9124441. (IEEE Applied Power Electronics Conference and Exposition (APEC)). https://doi.org/10.1109/APEC39645.2020.9124441

Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

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Modeling and Reducing the Parasitic Capacitance in Medium-Voltage Inductors

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