Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

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Abstrakt

This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.
OriginalsprogEngelsk
Titel2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Antal sider7
Udgivelsessted New Orleans, LA, USA
ForlagIEEE Press
Publikationsdatojun. 2020
Sider2751-2757
Artikelnummer9124441
ISBN (Trykt)978-1-7281-4830-4
ISBN (Elektronisk)978-1-7281-4829-8
DOI
StatusUdgivet - jun. 2020
Begivenhed2020 IEEE Applied Power Electronics Conference and Exposition (APEC) - New Orleans, LA, USA
Varighed: 15 mar. 202019 mar. 2020

Konference

Konference2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
LandUSA
ByNew Orleans, LA
Periode15/03/202019/03/2020
NavnIEEE Applied Power Electronics Conference and Exposition (APEC)
ISSN1048-2334

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