Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

Dipen Narendra Dalal; Hongbo Zhao; Jannick Kjær Jørgensen; Nicklas Christensen; Asger Bjørn Jørgensen; Szymon Michal Beczkowski; Christian Uhrenfeldt; Stig Munk-Nielsen

doi:10.1109/APEC39645.2020.9124441

Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

Dipen Narendra Dalal, Hongbo Zhao, Jannick Kjær Jørgensen, Nicklas Christensen, Asger Bjørn Jørgensen, Szymon Michal Beczkowski, Christian Uhrenfeldt, Stig Munk-Nielsen

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

28 Citationer (Scopus)

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Abstract

This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.

Originalsprog	Engelsk
Titel	2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Antal sider	7
Udgivelsessted	New Orleans, LA, USA
Forlag	IEEE Press
Publikationsdato	jun. 2020
Sider	2751-2757
Artikelnummer	9124441
ISBN (Trykt)	978-1-7281-4830-4
ISBN (Elektronisk)	978-1-7281-4829-8
DOI	https://doi.org/10.1109/APEC39645.2020.9124441
Status	Udgivet - jun. 2020
Begivenhed	2020 IEEE Applied Power Electronics Conference and Exposition (APEC) - New Orleans, LA, USA Varighed: 15 mar. 2020 → 19 mar. 2020

Konference

Konference	2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Land/Område	USA
By	New Orleans, LA
Periode	15/03/2020 → 19/03/2020

Navn	IEEE Applied Power Electronics Conference and Exposition (APEC)
ISSN	1048-2334

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10.1109/APEC39645.2020.9124441

Demonstration of 10 kV SiC MOSFET enabled MV power stackAccepteret manuskript, 2,33 MB

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2 Afsluttet

MVolt: Medium Voltage Power Electronics for Wind Systems
Munk-Nielsen, S. (PI (principal investigator)), Uhrenfeldt, C. (CoI (co-investigator)), Jørgensen, A. B. (CoI (co-investigator)), Jørgensen, J. K. (CoI (co-investigator)), Beczkowski, S. (Projektdeltager), Bech, M. M. (Projektdeltager), Spender-Andersen, G. (Projektdeltager), Lascu, C. (Projektdeltager), Zhao, H. (Projektdeltager), Dalal, D. N. (Projektdeltager), Kjærsgaard, B. F. (Projektdeltager), Aunsborg, T. S. (Projektdeltager), Jacobsen, J. (Projektdeltager), Mishra, P. (Projektdeltager) & Steffensen, B. (Projektkoordinator)
Innovationsfonden
01/10/2020 → 30/09/2024
Projekter: Projekt › Forskning
Medium Voltage Based on SiC (MV-BASIC)
Munk-Nielsen, S. (PI (principal investigator)), Uhrenfeldt, C. (Projektdeltager), Beczkowski, S. (Projektdeltager), Bech, M. M. (Projektkoordinator), Wang, X. (Projektdeltager), Dalal, D. N. (Projektdeltager), Jørgensen, J. K. (Projektdeltager), Zhao, H. (Projektdeltager), Mishra, P. (Projektdeltager), Jørgensen, A. B. (Projektdeltager) & Steffensen, B. (Projektkoordinator)
Department of Energy Technology
01/07/2018 → 30/06/2022
Projekter: Projekt › Forskning

28 Citationer
1 Ph.d.-afhandling

Modeling and Reducing the Parasitic Capacitance in Medium-Voltage Inductors
Zhao, H., 2021, Aalborg Universitetsforlag. 103 s.
Publikation: Ph.d.-afhandling

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Citationsformater

Dalal, D. N., Zhao, H., Jørgensen, J. K., Christensen, N., Jørgensen, A. B., Beczkowski, S. M., Uhrenfeldt, C., & Munk-Nielsen, S. (2020). Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack. I 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) (s. 2751-2757). Artikel 9124441 IEEE Press. https://doi.org/10.1109/APEC39645.2020.9124441

@inproceedings{500957a2e03542e8af029909d940ee43,

title = "Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack",

abstract = "This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.",

keywords = "10 kV SiC MOSFETs, medium voltage (MV), power stack, two-level voltage source converter (2L-VSC)",

author = "Dalal, {Dipen Narendra} and Hongbo Zhao and J{\o}rgensen, {Jannick Kj{\ae}r} and Nicklas Christensen and J{\o}rgensen, {Asger Bj{\o}rn} and Beczkowski, {Szymon Michal} and Christian Uhrenfeldt and Stig Munk-Nielsen",

year = "2020",

month = jun,

doi = "10.1109/APEC39645.2020.9124441",

language = "English",

isbn = "978-1-7281-4830-4",

series = "IEEE Applied Power Electronics Conference and Exposition (APEC)",

publisher = "IEEE Press",

pages = "2751--2757",

booktitle = "2020 IEEE Applied Power Electronics Conference and Exposition (APEC)",

note = "2020 IEEE Applied Power Electronics Conference and Exposition (APEC) ; Conference date: 15-03-2020 Through 19-03-2020",

}

Dalal, DN, Zhao, H , Jørgensen, JK, Christensen, N, Jørgensen, AB , Beczkowski, SM, Uhrenfeldt, C & Munk-Nielsen, S 2020, Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack. i 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)., 9124441, IEEE Press, New Orleans, LA, USA, IEEE Applied Power Electronics Conference and Exposition (APEC), s. 2751-2757, 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), New Orleans, LA, USA, 15/03/2020. https://doi.org/10.1109/APEC39645.2020.9124441

Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack. / Dalal, Dipen Narendra; Zhao, Hongbo ; Jørgensen, Jannick Kjær et al.
2020 IEEE Applied Power Electronics Conference and Exposition (APEC). New Orleans, LA, USA: IEEE Press, 2020. s. 2751-2757 9124441 (IEEE Applied Power Electronics Conference and Exposition (APEC)).

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

AU - Dalal, Dipen Narendra

AU - Zhao, Hongbo

AU - Jørgensen, Jannick Kjær

AU - Christensen, Nicklas

AU - Jørgensen, Asger Bjørn

AU - Beczkowski, Szymon Michal

AU - Uhrenfeldt, Christian

AU - Munk-Nielsen, Stig

PY - 2020/6

Y1 - 2020/6

N2 - This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.

AB - This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.

KW - 10 kV SiC MOSFETs

KW - medium voltage (MV)

KW - power stack

KW - two-level voltage source converter (2L-VSC)

UR - http://www.scopus.com/inward/record.url?scp=85087790590&partnerID=8YFLogxK

U2 - 10.1109/APEC39645.2020.9124441

DO - 10.1109/APEC39645.2020.9124441

M3 - Article in proceeding

SN - 978-1-7281-4830-4

T3 - IEEE Applied Power Electronics Conference and Exposition (APEC)

SP - 2751

EP - 2757

BT - 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

PB - IEEE Press

CY - New Orleans, LA, USA

T2 - 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

Y2 - 15 March 2020 through 19 March 2020

ER -

Dalal DN, Zhao H , Jørgensen JK, Christensen N, Jørgensen AB , Beczkowski SM et al. Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack. I 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). New Orleans, LA, USA: IEEE Press. 2020. s. 2751-2757. 9124441. (IEEE Applied Power Electronics Conference and Exposition (APEC)). doi: 10.1109/APEC39645.2020.9124441

Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack

Abstract

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Projekter

MVolt: Medium Voltage Power Electronics for Wind Systems

Medium Voltage Based on SiC (MV-BASIC)

Publikation

Modeling and Reducing the Parasitic Capacitance in Medium-Voltage Inductors

Citationsformater