TY - GEN
T1 - Demonstration of a 10 kV SiC MOSFET based Medium Voltage Power Stack
AU - Dalal, Dipen Narendra
AU - Zhao, Hongbo
AU - Jørgensen, Jannick Kjær
AU - Christensen, Nicklas
AU - Jørgensen, Asger Bjørn
AU - Beczkowski, Szymon Michal
AU - Uhrenfeldt, Christian
AU - Munk-Nielsen, Stig
PY - 2020/6
Y1 - 2020/6
N2 - This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.
AB - This paper presents a 10 kV SiC MOSFET based power stack, featuring medium voltage power conversion with a simple two-level voltage source converter topology. The design of the medium voltage (MV) power stack is realized in a commercial IGBT based three phase power stack frame. The power stack assembly comprises of the custom packaged single-chip half bridge 10 kV SiC MOSFET power modules, gate driver units with a very low isolation capacitance, DC-link capacitors, busbar and a liquid cooled heatsink. The designed power stacks are tested in a DC-fed three phase back-to-back setup with the total circulated power of 42 kVA, DC-link voltage of 6 kV, rms load current of 7 A and 5 kHz switching frequency. Under this operating conditions, an efficiency > 99% is deduced for the designed MV power stack.
KW - 10 kV SiC MOSFETs
KW - medium voltage (MV)
KW - power stack
KW - two-level voltage source converter (2L-VSC)
UR - http://www.scopus.com/inward/record.url?scp=85087790590&partnerID=8YFLogxK
U2 - 10.1109/APEC39645.2020.9124441
DO - 10.1109/APEC39645.2020.9124441
M3 - Article in proceeding
SN - 978-1-7281-4830-4
T3 - IEEE Applied Power Electronics Conference and Exposition (APEC)
SP - 2751
EP - 2757
BT - 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
PB - IEEE Press
CY - New Orleans, LA, USA
T2 - 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Y2 - 15 March 2020 through 19 March 2020
ER -