Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules

Haoze Luo*, Nick Baker, Francesco Iannuzzo, Frede Blaabjerg

*Kontaktforfatter

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

8 Citationer (Scopus)

Resumé

In order to distinguish the die and bond wire degradations, in this paper both the die and bond wire resistances of SiC MOSFET modules are measured and tested during the accelerated cycling tests. It is proved that, since the die degradation under specific conditions increases the temperature swing, bond wires undergo harsher thermo-mechanical stress than expected. The experimental results confirm the die-related thermal failure mechanism. An improved degradation model is proposed for the bond-wire resistance increase in case of die degradation.
OriginalsprogEngelsk
TidsskriftMicroelectronics Reliability
Vol/bind76-77
Sider (fra-til)415-419
Antal sider5
ISSN0026-2714
DOI
StatusUdgivet - sep. 2017
Begivenhed28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) - Bordeaux, Frankrig
Varighed: 25 sep. 201728 sep. 2017

Konference

Konference28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
LandFrankrig
ByBordeaux
Periode25/09/201728/09/2017

Fingerprint

field effect transistors
modules
Aging of materials
degradation
Degradation
cycles
wire
Wire
Power MOSFET
Temperature
temperature

Citer dette

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title = "Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules",
abstract = "In order to distinguish the die and bond wire degradations, in this paper both the die and bond wire resistances of SiC MOSFET modules are measured and tested during the accelerated cycling tests. It is proved that, since the die degradation under specific conditions increases the temperature swing, bond wires undergo harsher thermo-mechanical stress than expected. The experimental results confirm the die-related thermal failure mechanism. An improved degradation model is proposed for the bond-wire resistance increase in case of die degradation.",
author = "Haoze Luo and Nick Baker and Francesco Iannuzzo and Frede Blaabjerg",
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Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules. / Luo, Haoze; Baker, Nick; Iannuzzo, Francesco; Blaabjerg, Frede.

I: Microelectronics Reliability, Bind 76-77, 09.2017, s. 415-419.

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

TY - GEN

T1 - Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules

AU - Luo, Haoze

AU - Baker, Nick

AU - Iannuzzo, Francesco

AU - Blaabjerg, Frede

PY - 2017/9

Y1 - 2017/9

N2 - In order to distinguish the die and bond wire degradations, in this paper both the die and bond wire resistances of SiC MOSFET modules are measured and tested during the accelerated cycling tests. It is proved that, since the die degradation under specific conditions increases the temperature swing, bond wires undergo harsher thermo-mechanical stress than expected. The experimental results confirm the die-related thermal failure mechanism. An improved degradation model is proposed for the bond-wire resistance increase in case of die degradation.

AB - In order to distinguish the die and bond wire degradations, in this paper both the die and bond wire resistances of SiC MOSFET modules are measured and tested during the accelerated cycling tests. It is proved that, since the die degradation under specific conditions increases the temperature swing, bond wires undergo harsher thermo-mechanical stress than expected. The experimental results confirm the die-related thermal failure mechanism. An improved degradation model is proposed for the bond-wire resistance increase in case of die degradation.

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DO - 10.1016/j.microrel.2017.07.004

M3 - Conference article in Journal

VL - 76-77

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JO - Microelectronics Reliability

JF - Microelectronics Reliability

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