Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities

Masaki Takahashi; Thore Stig Aunsborg; Christian Uhrenfeldt; Stig Munk-Nielsen; Asger Bjørn Jørgensen

doi:10.1109/IWIPP50752.2022.9894237

Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities

Masaki Takahashi^*, Thore Stig Aunsborg, Christian Uhrenfeldt, Stig Munk-Nielsen, Asger Bjørn Jørgensen

^*Kontaktforfatter

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

1 Citationer (Scopus)

73 Downloads (Pure)

Abstract

Determining the reliability of 10 kV SiC-MOSFET power modules experimentally, is challenging due to the low number of samples available in the market. A digital design based on 3D thermal calculations is demonstrated to improve reliability capability in a 10 kV SiC-MOSFET power module. The module design was determined based on the calculation with digital twin modelling. The correctness of the digital twin model was confirmed by fabricating a 10kV SiC-MOSFETs power module sample and comparing the calculation temperature with the measured results. The design was focused on aluminum wires on chips, and the effect of the wire temperature by changing the wire layout was clarified. The results show that the improved wire layout reduces the wire temperature by 2.2-5.3% compared to the conventional design. This is expected to increase the power cycle capability by up to 31%, according to predictions based on the Coffin-Manson model.

Originalsprog	Engelsk
Titel	2022 IEEE International Workshop on Integrated Power Packaging (IWIPP)
Antal sider	6
Udgivelsessted	Grenoble, France
Forlag	IEEE
Publikationsdato	24 aug. 2022
Artikelnummer	3
ISBN (Elektronisk)	9781728199337
DOI	https://doi.org/10.1109/IWIPP50752.2022.9894237
Status	Udgivet - 24 aug. 2022
Begivenhed	2022 IEEE International Workshop on Integrated Power Packaging (IWIPP) - Grenoble, France, Grenoble, Frankrig Varighed: 24 aug. 2022 → 26 aug. 2022

Konference

Konference	2022 IEEE International Workshop on Integrated Power Packaging (IWIPP)
Lokation	Grenoble, France
Land/Område	Frankrig
By	Grenoble
Periode	24/08/2022 → 26/08/2022

Adgang til dokumentet

10.1109/IWIPP50752.2022.9894237

IWIPP2022_MasakiTakahashiAccepteret manuskript, 793 KB

https://ieeexplore.ieee.org/document/9894237

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Link to publication in Scopus

Developing the Novel Reliability Design Method with 3D-simulation of SiC Power Module
Takahashi, M., Uhrenfeldt, C., Munk-Nielsen, S. & Jørgensen, A. B.
01/10/2021 → 30/09/2024
Projekter: Projekt › Ph.d.-projekt
CoDE: Center of Digitalized Electronics (CoDE)
Munk-Nielsen, S., Jørgensen, A. B., Uhrenfeldt, C., Beczkowski, S. M., Ahmad, F., Meinert, J. D., Kubulus, P. P., Takahashi, M., Sun, Z., Wang, R., Gao, Y., Zäch, M. R., Meyer, S. & Steffensen, B.
Poul Due Jensens Fond
01/01/2021 → 31/12/2025
Projekter: Projekt › Forskning
MVolt: Medium Voltage Power Electronics for Wind Systems
Munk-Nielsen, S., Uhrenfeldt, C., Jørgensen, A. B., Jørgensen, J. K., Beczkowski, S. M., Bech, M. M., Spender-Andersen, G., Lascu, C., Zhao, H., Dalal, D. N., Kjærsgaard, B. F., Aunsborg, T. S., Jacobsen, J., Mishra, P. & Steffensen, B.
Innovationsfonden
01/10/2020 → 30/09/2024
Projekter: Projekt › Forskning

Citationsformater

@inproceedings{12f96d388cc74725bcdb8c959ef39469,

title = "Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities",

abstract = "Determining the reliability of 10 kV SiC-MOSFET power modules experimentally, is challenging due to the low number of samples available in the market. A digital design based on 3D thermal calculations is demonstrated to improve reliability capability in a 10 kV SiC-MOSFET power module. The module design was determined based on the calculation with digital twin modelling. The correctness of the digital twin model was confirmed by fabricating a 10kV SiC-MOSFETs power module sample and comparing the calculation temperature with the measured results. The design was focused on aluminum wires on chips, and the effect of the wire temperature by changing the wire layout was clarified. The results show that the improved wire layout reduces the wire temperature by 2.2-5.3% compared to the conventional design. This is expected to increase the power cycle capability by up to 31%, according to predictions based on the Coffin-Manson model.",

keywords = "10 kV SiC MOSFETs, 3D Thermal Simulation, Digital design, Power cycle, Power module",

author = "Masaki Takahashi and Aunsborg, {Thore Stig} and Christian Uhrenfeldt and Stig Munk-Nielsen and J{\o}rgensen, {Asger Bj{\o}rn}",

year = "2022",

month = aug,

day = "24",

doi = "10.1109/IWIPP50752.2022.9894237",

language = "English",

booktitle = "2022 IEEE International Workshop on Integrated Power Packaging (IWIPP)",

publisher = "IEEE",

address = "United States",

note = "2022 IEEE International Workshop on Integrated Power Packaging (IWIPP) ; Conference date: 24-08-2022 Through 26-08-2022",

}

Takahashi, M , Aunsborg, TS, Uhrenfeldt, C, Munk-Nielsen, S & Jørgensen, AB 2022, Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities. i 2022 IEEE International Workshop on Integrated Power Packaging (IWIPP)., 3, IEEE, Grenoble, France, 2022 IEEE International Workshop on Integrated Power Packaging (IWIPP), Grenoble, Frankrig, 24/08/2022. https://doi.org/10.1109/IWIPP50752.2022.9894237

Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities. / Takahashi, Masaki ; Aunsborg, Thore Stig; Uhrenfeldt, Christian et al.
2022 IEEE International Workshop on Integrated Power Packaging (IWIPP). Grenoble, France: IEEE, 2022. 3.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities

AU - Takahashi, Masaki

AU - Aunsborg, Thore Stig

AU - Uhrenfeldt, Christian

AU - Munk-Nielsen, Stig

AU - Jørgensen, Asger Bjørn

PY - 2022/8/24

Y1 - 2022/8/24

N2 - Determining the reliability of 10 kV SiC-MOSFET power modules experimentally, is challenging due to the low number of samples available in the market. A digital design based on 3D thermal calculations is demonstrated to improve reliability capability in a 10 kV SiC-MOSFET power module. The module design was determined based on the calculation with digital twin modelling. The correctness of the digital twin model was confirmed by fabricating a 10kV SiC-MOSFETs power module sample and comparing the calculation temperature with the measured results. The design was focused on aluminum wires on chips, and the effect of the wire temperature by changing the wire layout was clarified. The results show that the improved wire layout reduces the wire temperature by 2.2-5.3% compared to the conventional design. This is expected to increase the power cycle capability by up to 31%, according to predictions based on the Coffin-Manson model.

AB - Determining the reliability of 10 kV SiC-MOSFET power modules experimentally, is challenging due to the low number of samples available in the market. A digital design based on 3D thermal calculations is demonstrated to improve reliability capability in a 10 kV SiC-MOSFET power module. The module design was determined based on the calculation with digital twin modelling. The correctness of the digital twin model was confirmed by fabricating a 10kV SiC-MOSFETs power module sample and comparing the calculation temperature with the measured results. The design was focused on aluminum wires on chips, and the effect of the wire temperature by changing the wire layout was clarified. The results show that the improved wire layout reduces the wire temperature by 2.2-5.3% compared to the conventional design. This is expected to increase the power cycle capability by up to 31%, according to predictions based on the Coffin-Manson model.

KW - 10 kV SiC MOSFETs

KW - 3D Thermal Simulation

KW - Digital design

KW - Power cycle

KW - Power module

UR - http://www.scopus.com/inward/record.url?scp=85141514271&partnerID=8YFLogxK

U2 - 10.1109/IWIPP50752.2022.9894237

DO - 10.1109/IWIPP50752.2022.9894237

M3 - Article in proceeding

BT - 2022 IEEE International Workshop on Integrated Power Packaging (IWIPP)

PB - IEEE

CY - Grenoble, France

T2 - 2022 IEEE International Workshop on Integrated Power Packaging (IWIPP)

Y2 - 24 August 2022 through 26 August 2022

ER -

Digital design demonstration of 10kV SiC-MOSFET power module to improve wire-bonding layout for power cycle capabilities

Abstract

Konference

Adgang til dokumentet

AUB Link

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Fingeraftryk

Projekter

Developing the Novel Reliability Design Method with 3D-simulation of SiC Power Module

CoDE: Center of Digitalized Electronics (CoDE)

MVolt: Medium Voltage Power Electronics for Wind Systems

Citationsformater