Dual implantation of silicon with boron and argon ions

Silicon wafers are implanted with 40 keV B⁺ ions (1.2 × 10¹⁵ or 1.2 × 10¹⁵ cm⁻²) and 50 or 100 keV Ar⁺ ions (from 1.2 × 10¹⁴ to 1.2 × 10¹⁵ cm⁻²). After implantation the samples are furnace annealed at temperatures from 100 to 450°C. The depth profiles of the implanted Ar atoms and radiation damages before and after annealing are obtained from random and channeled RBS spectra. The influence of preliminary boron implantation on the distribution of radiation damages created during subsequent argon implantation is studied. It is shown that the annealing behaviour of implanted layers depends on the degree of silicon amorphization.