Dual implantation of silicon with boron and argon ions

Vladimir Popok, Vladimir Hnatowicz, J. Kvítek, V. Svorcik, V. Rybka

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Abstrakt

Silicon wafers are implanted with 40 keV B+ ions (1.2 × 10e15 or 1.2 × 10e15 cm−2) and 50 or 100 keV Ar+ ions (from 1.2 × 10e14 to 1.2 × 10e15 cm−2). After implantation the samples are furnace annealed at temperatures from 100 to 450°C. The depth profiles of the implanted Ar atoms and radiation damages before and after annealing are obtained from random and channeled RBS spectra. The influence of preliminary boron implantation on the distribution of radiation damages created during subsequent argon implantation is studied. It is shown that the annealing behaviour of implanted layers depends on the degree of silicon amorphization.
OriginalsprogEngelsk
Tidsskriftphysica status solidi (a)
Vol/bind141
Udgave nummer1
Sider (fra-til)93-98
Antal sider6
ISSN0031-8965
StatusUdgivet - 1994
Udgivet eksterntJa

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