Dynamic Current Sharing Optimization of Asymmetric SiC Power Module

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Abstract

The dynamic current imbalance in the power modules with paralleled Silicon Carbide (SiC) MOSFETs appears due to the die parameter variations and layout asymmetry. This can force the derating of a power module and decrease reliability, potentially leading to a thermal runaway. In this work, an optimization scheme, compensating for the layout asymmetry using the individual gate and drive source resistances is presented. The results are verified experimentally in a Double Pulse Test setup.
OriginalsprogEngelsk
Titel2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023
Antal sider5
ForlagIEEE
Publikationsdato29 okt. 2023
Sider5923-5927
Artikelnummer10361954
ISBN (Elektronisk)9798350316445
DOI
StatusUdgivet - 29 okt. 2023
Begivenhed2023 IEEE Energy Conversion Congress and Exposition (ECCE) - Nashville, USA
Varighed: 29 okt. 20232 nov. 2023
https://www.ieee-ecce.org/2023/

Konference

Konference2023 IEEE Energy Conversion Congress and Exposition (ECCE)
Land/OmrådeUSA
ByNashville
Periode29/10/202302/11/2023
Internetadresse

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