In this paper we present an experimental study of the effect of the epi-layer parameters on the reliability of medium voltage power VDMOSFET to sustain single event effects caused by the impact of heavy ions. The impact of energetic particles is accompanied by a charge generation that we experimentally detected and can cause the premature failure of the device. The tested devices have been specifically constructed by using different epi-regions and the typical gate structure used in 200V VDMOSFET.lt is experimentally proven that the failure event involves a damage of the gate oxide due to the development of a large electric field at the silicon surface underneath the gate oxide. A statistical analysis we have performed shows that the rupture mechanism is quite independent of the charge generated (ion energy and species) and strongly dependent on the epi-layer doping profile. The failure mechanisms reported in the literature and based on a flow of holes through a surface path underneath the gate does not completely explain this experimental behavior.
|Bogserie||European Space Agency, (Special Publication) ESA SP|
|Status||Udgivet - 1 dec. 2004|
|Begivenhed||7th European Conference on Radiation and its Effects on Components and Systems, RADECS 2003 - Noordwijk, Holland|
Varighed: 15 sep. 2003 → 19 sep. 2003
|Konference||7th European Conference on Radiation and its Effects on Components and Systems, RADECS 2003|
|Periode||15/09/2003 → 19/09/2003|
|Sponsor||IEEE Nuclear Plasma Sci. Soc., Radiation Effects Steering Group, ESA|