Effects of auxiliary source connections in multichip power module

Helong Li, Stig Munk-Nielsen, Szymon Beczkowski, Xiongfei Wang, Emanuel-Petre Eni

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1 Citationer (Scopus)

Abstrakt

Auxiliary source bond wires and connections are widely used to in the power module with paralleled MOSFETs or IGBTs. This paper investigates the working mechanism and the effects of the auxiliary source connections in multichip power modules. It reveals that the auxiliary source connections cannot totally decouple the power loop and the gate loop like how the Kelvin source connection does, because they are still in the loop of power source current. Three effects of the auxiliary source connection are investigated and analyzed: common source stray inductance reduction, transient drain-source current imbalance mitigation and influence on the steady state bond wire current distribution. Simulation and experimental results validate the working mechanism analysis and the effects of the auxiliary source connections.
OriginalsprogEngelsk
TitelProceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
Antal sider6
ForlagIEEE
Publikationsdatomar. 2016
Sider3101 - 3106
ISBN (Trykt)978-1-4673-8393-6, 978-1-4673-9551-9
ISBN (Elektronisk)978-1-4673-9550-2
DOI
StatusUdgivet - mar. 2016
Begivenhed2016 IEEE Applied Power Electronics Conference and Exposition (APEC) - Long Beach Convention and Entertainment Center, Long Beach, USA
Varighed: 20 mar. 201624 mar. 2016
http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32616

Konference

Konference2016 IEEE Applied Power Electronics Conference and Exposition (APEC)
LokationLong Beach Convention and Entertainment Center
Land/OmrådeUSA
ByLong Beach
Periode20/03/201624/03/2016
Internetadresse

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