Effects of thermal cycling on aluminum metallization of power diodes

Mads Brincker, Kristian Bonderup Pedersen, Peter Kjær Kristensen, Vladimir Popok

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    12 Citationer (Scopus)

    Abstrakt

    Reconstruction of aluminum metallization on top of power electronic chips is a well-known wear out phenomenon under power cycling conditions. However, the origins of reconstruction are still under discussion. In the current study, a method for carrying out passive thermal cycling of power diodes in a controlled environment is developed, thus eliminating possible contribution to degradation from electric current and humidity. The focus is centered on the structural changes in the top Al metallization layer of the power diodes, correlated with the
    change of sheet resistance. Since the atmosphere is controlled and the device is not subjected to a current load the observed degradation of metallization and corresponding increase of resistance is purely induced by thermo-mechanical stress. A correlation between number of cycles, micro-structural evolution, and sheet resistance is found and conclusions on the dominant role of thermo-mechanical stresses are achieved. Additionally, proposals are made on how the current thermal test setup can be further developed to study the role of corrosion.
    OriginalsprogEngelsk
    TidsskriftMicroelectronics Reliability
    Vol/bind55
    Sider (fra-til)1988-1991
    Antal sider4
    ISSN0026-2714
    DOI
    StatusUdgivet - 16 okt. 2015
    Begivenhed26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Toulouse, Frankrig
    Varighed: 5 okt. 20159 okt. 2015

    Konference

    Konference26th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
    LandFrankrig
    ByToulouse
    Periode05/10/201509/10/2015

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