Projekter pr. år
Abstract
A novel Insulated Gate Bipolar Transistor (IGBT) electro-thermal modeling approach involving PSpice and ANSYS/Icepak with both high accuracy and simulation speed has been presented to study short-circuit of a 1.7 kV/1 kA commercial IGBT module. The approach successfully predicts the current and temperature distribution inside the chip of power IGBT modules. The simulation result is further validated using a 6 kA/1.1 kV non-destructive tester. The experimental validation demonstrates the modeling approach’s capability for reliable design of high power IGBT power modules given electrical/thermal behavior under severe conditions.
Originalsprog | Engelsk |
---|---|
Titel | Proceedings of the 2015 Annual Reliability and Maintainability Symposium (RAMS) |
Antal sider | 7 |
Forlag | IEEE Press |
Publikationsdato | jan. 2015 |
Sider | 1-7 |
ISBN (Trykt) | 978-1-4799-6702-5 |
DOI | |
Status | Udgivet - jan. 2015 |
Begivenhed | 2015 Annual Reliability and Maintainability Symposium (RAMS) - Palm Harbor, FL, USA , USA Varighed: 26 jan. 2015 → 29 jan. 2015 |
Konference
Konference | 2015 Annual Reliability and Maintainability Symposium (RAMS) |
---|---|
Land/Område | USA |
By | Palm Harbor, FL, USA |
Periode | 26/01/2015 → 29/01/2015 |
Fingeraftryk
Dyk ned i forskningsemnerne om 'Electro-thermal modeling of high power IGBT module short-circuits with experimental validation'. Sammen danner de et unikt fingeraftryk.Projekter
- 1 Afsluttet
-
Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Projekter: Projekt › Forskning