EMI Modeling of Three-Level Active Neutral-Point-Clamped SiC Inverter Under Different Modulation Schemes

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Abstrakt

This paper investigates the electromagnetic interference (EMI) emission in three-level active neutral-point-clamped (3L-ANPC) silicon carbide (SiC) inverter. Four typical modulation schemes of 3L-ANPC inverter are considered. An EMI model is established by including all the system parasitics and noise sources. Based on this model, a comparison of different modulation schemes on EMI emission is carried out. Simulations are performed in a case study to confirm the theoretical expectations.
OriginalsprogEngelsk
TitelICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia
Antal sider6
Udgivelses stedBusan, Korea (South)
ForlagIEEE Press
Publikationsdatomaj 2019
Sider1781-1786
Artikelnummer8797291
ISBN (Trykt)978-1-7281-1612-9
ISBN (Elektronisk)978-89-5708-313-0
StatusUdgivet - maj 2019
Begivenhed2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia) - Busan, Sydkorea
Varighed: 27 maj 201930 maj 2019

Konference

Konference2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)
LandSydkorea
ByBusan
Periode27/05/201930/05/2019
NavnInternational Conference on Power Electronics
ISSN2150-6078

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Citationsformater

Pan, D., Chen, M., Wang, X., Wang, H., Blaabjerg, F., & Wang, W. (2019). EMI Modeling of Three-Level Active Neutral-Point-Clamped SiC Inverter Under Different Modulation Schemes. I ICPE 2019 - ECCE Asia - 10th International Conference on Power Electronics - ECCE Asia (s. 1781-1786). [8797291] IEEE Press. International Conference on Power Electronics