Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules

Haoze Luo; Wuhua Li; Francesco Iannuzzo; Xiangning He; Frede Blaabjerg

doi:10.1109/TIE.2017.2745442

Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules

Haoze Luo, Wuhua Li, Francesco Iannuzzo, Xiangning He, Frede Blaabjerg

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review

54 Citationer (Scopus)

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Abstract

This paper proposes the adoption of the inherent emitter stray inductance LeE in high-power insulated gate bipolar transistor modules as a new dynamic thermosensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis.

Originalsprog	Engelsk
Tidsskrift	I E E E Transactions on Industrial Electronics
Vol/bind	65
Udgave nummer	6
Sider (fra-til)	4724-4738
Antal sider	15
ISSN	0278-0046
DOI	https://doi.org/10.1109/TIE.2017.2745442
Status	Udgivet - jun. 2018

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10.1109/TIE.2017.2745442

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Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Projekter: Projekt › Forskning

Citationsformater

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title = "Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules",

abstract = "This paper proposes the adoption of the inherent emitter stray inductance LeE in high-power insulated gate bipolar transistor modules as a new dynamic thermosensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis.",

keywords = "High-power IGBT modules, Auxiliary parasitic inductance, Dynamic thermo-sensitive electrical parameters, Junction temperature extraction principles",

author = "Haoze Luo and Wuhua Li and Francesco Iannuzzo and Xiangning He and Frede Blaabjerg",

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Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules. / Luo, Haoze; Li, Wuhua; Iannuzzo, Francesco et al.
I: I E E E Transactions on Industrial Electronics, Bind 65, Nr. 6, 06.2018, s. 4724-4738.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review

TY - JOUR

T1 - Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules

AU - Luo, Haoze

AU - Li, Wuhua

AU - Iannuzzo, Francesco

AU - He, Xiangning

AU - Blaabjerg, Frede

PY - 2018/6

Y1 - 2018/6

N2 - This paper proposes the adoption of the inherent emitter stray inductance LeE in high-power insulated gate bipolar transistor modules as a new dynamic thermosensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis.

AB - This paper proposes the adoption of the inherent emitter stray inductance LeE in high-power insulated gate bipolar transistor modules as a new dynamic thermosensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis.

KW - High-power IGBT modules

KW - Auxiliary parasitic inductance

KW - Dynamic thermo-sensitive electrical parameters

KW - Junction temperature extraction principles

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JO - I E E E Transactions on Industrial Electronics

JF - I E E E Transactions on Industrial Electronics

IS - 6

ER -

Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters through Emitter Stray Inductance in High-Power IGBT Modules

Abstract

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