Failure mechanism analysis of a discrete 650V enhancement mode GaN-on-Si power device with reverse conduction accelerated power cycling test

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

10 Citationer (Scopus)

Resumé

A commercial discrete enhancement mode gallium nitride power component employing advanced package technology without conventional bond wire possesses the ability for bidirectional conduction. The gallium nitride power components can provide not only higher forward conductivity but also superior reverse conductivity. For the most part recent critical debates about the reverse conductivity of a GaN device have tended to center around their performance. However, the reliability of the device under reverse operation should be assessed in order for the advantages to be fully utilized in real applications. We present the results of reverse conduction power cycling test of a discrete 650-volt gallium nitride power device with novel package technology at temperature swings of 100 K. The result shows degradation of thermal conductivity and raising leakage current drain to source as reaching the number of cycles to failure. In physical failure analysis, delamination of a solder joint between a chip and a copper layer of an aluminum print circuit board is observed with a scanning acoustic microscope.
OriginalsprogEngelsk
TitelProceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)
Antal sider5
ForlagIEEE Press
Publikationsdatomar. 2017
Sider756-760
Artikelnummer7930779
ISBN (Elektronisk)978-1-5090-5366-7
DOI
StatusUdgivet - mar. 2017
Begivenhed32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017 - Tampa, USA
Varighed: 26 mar. 201730 mar. 2017

Konference

Konference32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017
LandUSA
ByTampa
Periode26/03/201730/03/2017
SponsorIEEE Industry Applications Society (IAS), IEEE Power Electronics Society (PELS), Power Sources Manufacturers Association (PSMA)

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Gallium nitride
Acoustic microscopes
Delamination
Leakage currents
Soldering alloys
Failure analysis
Thermal conductivity
Wire
Scanning
Copper
Aluminum
Degradation
Networks (circuits)
Temperature

Citer dette

Song, S., Munk-Nielsen, S., Uhrenfeldt, C., & Trintis, I. (2017). Failure mechanism analysis of a discrete 650V enhancement mode GaN-on-Si power device with reverse conduction accelerated power cycling test. I Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC) (s. 756-760). [7930779] IEEE Press. https://doi.org/10.1109/APEC.2017.7930779
Song, Sungyoung ; Munk-Nielsen, Stig ; Uhrenfeldt, Christian ; Trintis, Ionut. / Failure mechanism analysis of a discrete 650V enhancement mode GaN-on-Si power device with reverse conduction accelerated power cycling test. Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, 2017. s. 756-760
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title = "Failure mechanism analysis of a discrete 650V enhancement mode GaN-on-Si power device with reverse conduction accelerated power cycling test",
abstract = "A commercial discrete enhancement mode gallium nitride power component employing advanced package technology without conventional bond wire possesses the ability for bidirectional conduction. The gallium nitride power components can provide not only higher forward conductivity but also superior reverse conductivity. For the most part recent critical debates about the reverse conductivity of a GaN device have tended to center around their performance. However, the reliability of the device under reverse operation should be assessed in order for the advantages to be fully utilized in real applications. We present the results of reverse conduction power cycling test of a discrete 650-volt gallium nitride power device with novel package technology at temperature swings of 100 K. The result shows degradation of thermal conductivity and raising leakage current drain to source as reaching the number of cycles to failure. In physical failure analysis, delamination of a solder joint between a chip and a copper layer of an aluminum print circuit board is observed with a scanning acoustic microscope.",
keywords = "Gallium nitride, HEMT, Leakage current, Power cycling test, Reliability, Solder delamination, Wide band gap",
author = "Sungyoung Song and Stig Munk-Nielsen and Christian Uhrenfeldt and Ionut Trintis",
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Song, S, Munk-Nielsen, S, Uhrenfeldt, C & Trintis, I 2017, Failure mechanism analysis of a discrete 650V enhancement mode GaN-on-Si power device with reverse conduction accelerated power cycling test. i Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC)., 7930779, IEEE Press, s. 756-760, Tampa, USA, 26/03/2017. https://doi.org/10.1109/APEC.2017.7930779

Failure mechanism analysis of a discrete 650V enhancement mode GaN-on-Si power device with reverse conduction accelerated power cycling test. / Song, Sungyoung; Munk-Nielsen, Stig; Uhrenfeldt, Christian; Trintis, Ionut.

Proceedings of the 2017 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, 2017. s. 756-760 7930779.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

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