Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650V discrete GaN-on-Si HEMT power device by accelerated power cycling test

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

2 Citationer (Scopus)
OriginalsprogEngelsk
TidsskriftMicroelectronics Reliability
Vol/bind76-77
Sider (fra-til)539-543
ISSN0026-2714
DOI
StatusUdgivet - sep. 2017
Begivenhed28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF) - Bordeaux, Frankrig
Varighed: 25 sep. 201728 sep. 2017

Konference

Konference28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF)
LandFrankrig
ByBordeaux
Periode25/09/201728/09/2017

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Gallium nitride
gallium nitrides
High electron mobility transistors
Silicon
high electron mobility transistors
Leakage currents
leakage
Delamination
Thermal stress
cycles
silicon
Substrates
Acoustic microscopes
Soldering alloys
thermal stresses
Lead
Experiments
Scanning
acoustic microscopes
solders

Citer dette

@inproceedings{da9aa5ab94a542bebe83c94407be1884,
title = "Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650V discrete GaN-on-Si HEMT power device by accelerated power cycling test",
keywords = "Failure analysis, Failure mechanism, Gallium nitride, GaN-on-Si, Leakage current, Power cycling, Power device, Reliability",
author = "S. Song and S. Munk-Nielsen and C. Uhrenfeldt",
year = "2017",
month = "9",
doi = "10.1016/j.microrel.2017.07.011",
language = "English",
volume = "76-77",
pages = "539--543",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Pergamon Press",

}

TY - GEN

T1 - Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650V discrete GaN-on-Si HEMT power device by accelerated power cycling test

AU - Song, S.

AU - Munk-Nielsen, S.

AU - Uhrenfeldt, C.

PY - 2017/9

Y1 - 2017/9

KW - Failure analysis

KW - Failure mechanism

KW - Gallium nitride

KW - GaN-on-Si

KW - Leakage current

KW - Power cycling

KW - Power device

KW - Reliability

UR - http://www.scopus.com/inward/record.url?scp=85021927905&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2017.07.011

DO - 10.1016/j.microrel.2017.07.011

M3 - Conference article in Journal

VL - 76-77

SP - 539

EP - 543

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

ER -