Family of Step-up DC/DC Converters with Fast Dynamic Response for Low Power Applications

Mohsen N. Soltani, Ali Mostaan, Yam Prasad Siwakoti, Pooya Davari, Frede Blaabjerg

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

9 Citationer (Scopus)

Resumé

This study presents a family of novel step-up DC/DC converters which do not have a right half plane zero in their transfer function resulting in faster dynamic behaviour of the converters under the load variation. In addition, the voltage stress on all the active switches and diodes is as low as the input voltage level. The basic topology of this converter has a voltage gain of up to two in steady state. The derivatives of the converter are realised by adding a switched capacitor voltage multiplier cell in order to increase the voltage gain further. The most salient feature of these converters is presence of only two switches in the basic converter and its derivatives. The dynamic performance of the proposed converter and its first derivative is analysed by small-signal model using the state-space averaging method. The theoretical model is verified by experiments using GaN high-electron-mobility transistors with 1 MHz switching frequency.
OriginalsprogEngelsk
TidsskriftIET Power Electronics
Vol/bind9
Udgave nummer14
Sider (fra-til)2665 - 2673
Antal sider9
ISSN1755-4535
DOI
StatusUdgivet - nov. 2016

Fingerprint

DC-DC converters
Dynamic response
Electric potential
Derivatives
Switches
State space methods
Basic oxygen converters
Switching frequency
High electron mobility transistors
Transfer functions
Loads (forces)
Diodes
Capacitors
Topology
Experiments

Citer dette

@article{f129699144db471b8633ad4d8fef0e63,
title = "Family of Step-up DC/DC Converters with Fast Dynamic Response for Low Power Applications",
abstract = "This study presents a family of novel step-up DC/DC converters which do not have a right half plane zero in their transfer function resulting in faster dynamic behaviour of the converters under the load variation. In addition, the voltage stress on all the active switches and diodes is as low as the input voltage level. The basic topology of this converter has a voltage gain of up to two in steady state. The derivatives of the converter are realised by adding a switched capacitor voltage multiplier cell in order to increase the voltage gain further. The most salient feature of these converters is presence of only two switches in the basic converter and its derivatives. The dynamic performance of the proposed converter and its first derivative is analysed by small-signal model using the state-space averaging method. The theoretical model is verified by experiments using GaN high-electron-mobility transistors with 1 MHz switching frequency.",
keywords = "Wide band gap semiconductors, High electron mobility transistors, Gallium compounds, State-space methods, Low-power electronics, DC-DC power convertors, Dynamic response",
author = "{N. Soltani}, Mohsen and Ali Mostaan and Siwakoti, {Yam Prasad} and Pooya Davari and Frede Blaabjerg",
year = "2016",
month = "11",
doi = "10.1049/iet-pel.2016.0029",
language = "English",
volume = "9",
pages = "2665 -- 2673",
journal = "IET Power Electronics",
issn = "1755-4535",
publisher = "Institution of Engineering and Technology",
number = "14",

}

Family of Step-up DC/DC Converters with Fast Dynamic Response for Low Power Applications. / N. Soltani, Mohsen; Mostaan, Ali; Siwakoti, Yam Prasad; Davari, Pooya; Blaabjerg, Frede.

I: IET Power Electronics, Bind 9, Nr. 14, 11.2016, s. 2665 - 2673.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

TY - JOUR

T1 - Family of Step-up DC/DC Converters with Fast Dynamic Response for Low Power Applications

AU - N. Soltani, Mohsen

AU - Mostaan, Ali

AU - Siwakoti, Yam Prasad

AU - Davari, Pooya

AU - Blaabjerg, Frede

PY - 2016/11

Y1 - 2016/11

N2 - This study presents a family of novel step-up DC/DC converters which do not have a right half plane zero in their transfer function resulting in faster dynamic behaviour of the converters under the load variation. In addition, the voltage stress on all the active switches and diodes is as low as the input voltage level. The basic topology of this converter has a voltage gain of up to two in steady state. The derivatives of the converter are realised by adding a switched capacitor voltage multiplier cell in order to increase the voltage gain further. The most salient feature of these converters is presence of only two switches in the basic converter and its derivatives. The dynamic performance of the proposed converter and its first derivative is analysed by small-signal model using the state-space averaging method. The theoretical model is verified by experiments using GaN high-electron-mobility transistors with 1 MHz switching frequency.

AB - This study presents a family of novel step-up DC/DC converters which do not have a right half plane zero in their transfer function resulting in faster dynamic behaviour of the converters under the load variation. In addition, the voltage stress on all the active switches and diodes is as low as the input voltage level. The basic topology of this converter has a voltage gain of up to two in steady state. The derivatives of the converter are realised by adding a switched capacitor voltage multiplier cell in order to increase the voltage gain further. The most salient feature of these converters is presence of only two switches in the basic converter and its derivatives. The dynamic performance of the proposed converter and its first derivative is analysed by small-signal model using the state-space averaging method. The theoretical model is verified by experiments using GaN high-electron-mobility transistors with 1 MHz switching frequency.

KW - Wide band gap semiconductors

KW - High electron mobility transistors

KW - Gallium compounds

KW - State-space methods

KW - Low-power electronics

KW - DC-DC power convertors

KW - Dynamic response

U2 - 10.1049/iet-pel.2016.0029

DO - 10.1049/iet-pel.2016.0029

M3 - Journal article

VL - 9

SP - 2665

EP - 2673

JO - IET Power Electronics

JF - IET Power Electronics

SN - 1755-4535

IS - 14

ER -