Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping

Lorenzo Ceccarelli; Ramchandra Kotecha; Francesco Iannuzzo; Alan Mantooth

doi:10.1109/PEAC.2018.8590288

Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping

Lorenzo Ceccarelli, Ramchandra Kotecha, Francesco Iannuzzo, Alan Mantooth

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

2 Citationer (Scopus)

106 Downloads (Pure)

Originalsprog	Engelsk
Titel	Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018
Antal sider	6
Forlag	IEEE Press
Publikationsdato	nov. 2018
Sider	1-6
Artikelnummer	8590288
ISBN (Trykt)	978-1-5386-6055-3
ISBN (Elektronisk)	978-1-5386-6054-6
DOI	https://doi.org/10.1109/PEAC.2018.8590288
Status	Udgivet - nov. 2018
Begivenhed	2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018 - Shenzhen, Kina Varighed: 4 nov. 2018 → 7 nov. 2018

Konference

Konference	2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018
Land	Kina
By	Shenzhen
Periode	04/11/2018 → 07/11/2018
Sponsor	China Power Supply Society (CPSS), IEEE Power Electronics Society (PELS)

Adgang til dokumentet

10.1109/PEAC.2018.8590288

Final_PEAC_2018_newAccepteret manuskript, 706 KB

Andre filer og links

http://www.scopus.com/inward/record.url?scp=85060972034&partnerID=8YFLogxK

Fingeraftryk Dyk ned i forskningsemnerne om 'Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping'. Sammen danner de et unikt fingeraftryk.

1 Afsluttet

Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Projekter: Projekt › Forskning

1 Konferenceoplæg

Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping
Lorenzo Ceccarelli (Foredragsholder)
5 nov. 2018
Aktivitet: Foredrag og mundtlige bidrag › Konferenceoplæg

Best Presenter
Ceccarelli, L. (Modtager), 5 nov. 2018
Pris: Konferencepriser

Citationsformater

@inproceedings{37f70868a82d41a080b5a6b1d21cf2e9,

title = "Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping",

keywords = "SiC MOSFET, compact model, electro-thermal simulation, power electronics reliability",

author = "Lorenzo Ceccarelli and Ramchandra Kotecha and Francesco Iannuzzo and Alan Mantooth",

year = "2018",

month = nov,

doi = "10.1109/PEAC.2018.8590288",

language = "English",

isbn = "978-1-5386-6055-3",

pages = "1--6",

booktitle = "Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018",

publisher = "IEEE Press",

note = "2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018 ; Conference date: 04-11-2018 Through 07-11-2018",

}

Ceccarelli, L, Kotecha, R, Iannuzzo, F & Mantooth, A 2018, Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping. i Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018., 8590288, IEEE Press, s. 1-6, 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018, Shenzhen, Kina, 04/11/2018. https://doi.org/10.1109/PEAC.2018.8590288

Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping. / Ceccarelli, Lorenzo; Kotecha, Ramchandra; Iannuzzo, Francesco; Mantooth, Alan.

Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018. IEEE Press, 2018. s. 1-6 8590288.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping

AU - Ceccarelli, Lorenzo

AU - Kotecha, Ramchandra

AU - Iannuzzo, Francesco

AU - Mantooth, Alan

PY - 2018/11

Y1 - 2018/11

KW - SiC MOSFET

KW - compact model

KW - electro-thermal simulation

KW - power electronics reliability

UR - http://www.scopus.com/inward/record.url?scp=85060972034&partnerID=8YFLogxK

U2 - 10.1109/PEAC.2018.8590288

DO - 10.1109/PEAC.2018.8590288

M3 - Article in proceeding

AN - SCOPUS:85060972034

SN - 978-1-5386-6055-3

SP - 1

EP - 6

BT - Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018

PB - IEEE Press

T2 - 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018

Y2 - 4 November 2018 through 7 November 2018

ER -

Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping

Konference

Adgang til dokumentet

Andre filer og links

Center Of Reliable Power Electronics (CORPE)

Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping

Best Presenter

Citationsformater