| Originalsprog | Engelsk |
|---|---|
| Titel | Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018 |
| Antal sider | 6 |
| Forlag | IEEE Press |
| Publikationsdato | nov. 2018 |
| Sider | 1-6 |
| Artikelnummer | 8590288 |
| ISBN (Trykt) | 978-1-5386-6055-3 |
| ISBN (Elektronisk) | 978-1-5386-6054-6 |
| DOI | |
| Status | Udgivet - nov. 2018 |
| Begivenhed | 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018 - Shenzhen, Kina Varighed: 4 nov. 2018 → 7 nov. 2018 |
Konference
| Konference | 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018 |
|---|---|
| Land | Kina |
| By | Shenzhen |
| Periode | 04/11/2018 → 07/11/2018 |
| Sponsor | China Power Supply Society (CPSS), IEEE Power Electronics Society (PELS) |
Fingerprint
Emneord
Citer dette
}
Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping. / Ceccarelli, Lorenzo; Kotecha, Ramchandra; Iannuzzo, Francesco; Mantooth, Alan.
Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018. IEEE Press, 2018. s. 1-6 8590288.Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review
TY - GEN
T1 - Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping
AU - Ceccarelli, Lorenzo
AU - Kotecha, Ramchandra
AU - Iannuzzo, Francesco
AU - Mantooth, Alan
PY - 2018/11
Y1 - 2018/11
KW - SiC MOSFET
KW - compact model
KW - electro-thermal simulation
KW - power electronics reliability
UR - http://www.scopus.com/inward/record.url?scp=85060972034&partnerID=8YFLogxK
U2 - 10.1109/PEAC.2018.8590288
DO - 10.1109/PEAC.2018.8590288
M3 - Article in proceeding
SN - 978-1-5386-6055-3
SP - 1
EP - 6
BT - Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018
PB - IEEE Press
ER -