Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping

Lorenzo Ceccarelli, Ramchandra Kotecha, Francesco Iannuzzo, Alan Mantooth

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OriginalsprogEngelsk
TitelProceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018
Antal sider6
ForlagIEEE Press
Publikationsdatonov. 2018
Sider1-6
Artikelnummer8590288
ISBN (Trykt)978-1-5386-6055-3
ISBN (Elektronisk)978-1-5386-6054-6
DOI
StatusUdgivet - nov. 2018
Begivenhed2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018 - Shenzhen, Kina
Varighed: 4 nov. 20187 nov. 2018

Konference

Konference2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018
LandKina
ByShenzhen
Periode04/11/201807/11/2018
SponsorChina Power Supply Society (CPSS), IEEE Power Electronics Society (PELS)

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Circuit simulation
Power electronics
Topology
Finite element method
Hot Temperature
Power MOSFET

Citer dette

Ceccarelli, L., Kotecha, R., Iannuzzo, F., & Mantooth, A. (2018). Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping. I Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018 (s. 1-6). [8590288] IEEE Press. https://doi.org/10.1109/PEAC.2018.8590288
Ceccarelli, Lorenzo ; Kotecha, Ramchandra ; Iannuzzo, Francesco ; Mantooth, Alan. / Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping. Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018. IEEE Press, 2018. s. 1-6
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title = "Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping",
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Ceccarelli, L, Kotecha, R, Iannuzzo, F & Mantooth, A 2018, Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping. i Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018., 8590288, IEEE Press, s. 1-6, Shenzhen, Kina, 04/11/2018. https://doi.org/10.1109/PEAC.2018.8590288

Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping. / Ceccarelli, Lorenzo; Kotecha, Ramchandra; Iannuzzo, Francesco; Mantooth, Alan.

Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018. IEEE Press, 2018. s. 1-6 8590288.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

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AU - Iannuzzo, Francesco

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BT - Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018

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Ceccarelli L, Kotecha R, Iannuzzo F, Mantooth A. Fast Electro-thermal Simulation Strategy for SiC MOSFETs Based on Power Loss Mapping. I Proceedings of the 2018 IEEE International Power Electronics and Application Conference and Exposition, PEAC 2018. IEEE Press. 2018. s. 1-6. 8590288 https://doi.org/10.1109/PEAC.2018.8590288