Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires

Maogong Jiang; Guicui Fu; Lorenzo Ceccarelli; He Du; Martin Bendix Fogsgaard; Amir Sajjad Bahman; Yongheng Yang; Francesco Iannuzzo

doi:10.1109/ECCE.2019.8912236

Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires

Maogong Jiang , Guicui Fu, Lorenzo Ceccarelli, He Du, Martin Bendix Fogsgaard, Amir Sajjad Bahman, Yongheng Yang, Francesco Iannuzzo

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

13 Citationer (Scopus)

Abstract

This paper proposes a method to identify damage-sensitive electrical parameters (DESPs) for insulated gate bipolar transistor (IGBT) bond wires. Multiphysics simulations are performed to emulate the realistic electrical, thermal and mechanical behaviors of IGBT module. Temperature-dependent material properties are considered in silicon chips and aluminum bond wires. Steady-state electro-thermo-mechanical simulation results of IGBT modules in a given collector current are presented. The degradation mechanisms of wire-bonding crack propagation and complete lift-off are explored. Simulations are validated through the power cycling tests. The trend of measured forward voltage V CE(on) is similar to the simulation result. The modeling method and results can be used to evaluate the health status of IGBT module bond wires.

Originalsprog	Engelsk
Titel	Proceedings of 2019 IEEE Energy Conversion Congress and Exposition (ECCE)
Antal sider	6
Forlag	IEEE Press
Publikationsdato	sep. 2019
Sider	839-844
Artikelnummer	8912236
ISBN (Elektronisk)	9781728103952
DOI	https://doi.org/10.1109/ECCE.2019.8912236
Status	Udgivet - sep. 2019
Begivenhed	2019 IEEE Energy Conversion Congress and Exposition (ECCE) - Baltimore, USA Varighed: 29 sep. 2019 → 3 okt. 2019

Konference

Konference	2019 IEEE Energy Conversion Congress and Exposition (ECCE)
Land/Område	USA
By	Baltimore
Periode	29/09/2019 → 03/10/2019

Navn	IEEE Energy Conversion Congress and Exposition
ISSN	2329-3721

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13 Citationer
1 Ph.d.-afhandling

Impact of Short-Circuit Events on the Remaining Useful Life of SiC MOSFETs and Mitigation Strategy
Du, H., 2020, Aalborg Universitetsforlag. 83 s.
Publikation: Ph.d.-afhandling

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Citationsformater

Jiang , M., Fu, G., Ceccarelli, L., Du, H., Fogsgaard, M. B., Bahman, A. S., Yang, Y., & Iannuzzo, F. (2019). Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires. I Proceedings of 2019 IEEE Energy Conversion Congress and Exposition (ECCE) (s. 839-844). Artikel 8912236 IEEE Press. https://doi.org/10.1109/ECCE.2019.8912236

@inproceedings{3a26888e5ddb42c39dd6769d40bf39fc,

title = "Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires",

abstract = "This paper proposes a method to identify damage-sensitive electrical parameters (DESPs) for insulated gate bipolar transistor (IGBT) bond wires. Multiphysics simulations are performed to emulate the realistic electrical, thermal and mechanical behaviors of IGBT module. Temperature-dependent material properties are considered in silicon chips and aluminum bond wires. Steady-state electro-thermo-mechanical simulation results of IGBT modules in a given collector current are presented. The degradation mechanisms of wire-bonding crack propagation and complete lift-off are explored. Simulations are validated through the power cycling tests. The trend of measured forward voltage V CE(on) is similar to the simulation result. The modeling method and results can be used to evaluate the health status of IGBT module bond wires.",

keywords = "IGBT, Bond wires, Crack, Lift-off, Electric parameter, Finite element model",

author = "Maogong Jiang and Guicui Fu and Lorenzo Ceccarelli and He Du and Fogsgaard, {Martin Bendix} and Bahman, {Amir Sajjad} and Yongheng Yang and Francesco Iannuzzo",

year = "2019",

month = sep,

doi = "10.1109/ECCE.2019.8912236",

language = "English",

series = "IEEE Energy Conversion Congress and Exposition",

pages = "839--844",

booktitle = "Proceedings of 2019 IEEE Energy Conversion Congress and Exposition (ECCE)",

publisher = "IEEE Press",

note = "2019 IEEE Energy Conversion Congress and Exposition (ECCE) ; Conference date: 29-09-2019 Through 03-10-2019",

}

Jiang , M, Fu, G, Ceccarelli, L, Du, H, Fogsgaard, MB, Bahman, AS, Yang, Y & Iannuzzo, F 2019, Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires. i Proceedings of 2019 IEEE Energy Conversion Congress and Exposition (ECCE) ., 8912236, IEEE Press, IEEE Energy Conversion Congress and Exposition, s. 839-844, 2019 IEEE Energy Conversion Congress and Exposition (ECCE), Baltimore, Maryland, USA, 29/09/2019. https://doi.org/10.1109/ECCE.2019.8912236

Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires. / Jiang , Maogong; Fu, Guicui; Ceccarelli, Lorenzo et al.
Proceedings of 2019 IEEE Energy Conversion Congress and Exposition (ECCE) . IEEE Press, 2019. s. 839-844 8912236 (IEEE Energy Conversion Congress and Exposition).

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires

AU - Jiang , Maogong

AU - Fu, Guicui

AU - Ceccarelli, Lorenzo

AU - Du, He

AU - Fogsgaard, Martin Bendix

AU - Bahman, Amir Sajjad

AU - Yang, Yongheng

AU - Iannuzzo, Francesco

PY - 2019/9

Y1 - 2019/9

N2 - This paper proposes a method to identify damage-sensitive electrical parameters (DESPs) for insulated gate bipolar transistor (IGBT) bond wires. Multiphysics simulations are performed to emulate the realistic electrical, thermal and mechanical behaviors of IGBT module. Temperature-dependent material properties are considered in silicon chips and aluminum bond wires. Steady-state electro-thermo-mechanical simulation results of IGBT modules in a given collector current are presented. The degradation mechanisms of wire-bonding crack propagation and complete lift-off are explored. Simulations are validated through the power cycling tests. The trend of measured forward voltage V CE(on) is similar to the simulation result. The modeling method and results can be used to evaluate the health status of IGBT module bond wires.

AB - This paper proposes a method to identify damage-sensitive electrical parameters (DESPs) for insulated gate bipolar transistor (IGBT) bond wires. Multiphysics simulations are performed to emulate the realistic electrical, thermal and mechanical behaviors of IGBT module. Temperature-dependent material properties are considered in silicon chips and aluminum bond wires. Steady-state electro-thermo-mechanical simulation results of IGBT modules in a given collector current are presented. The degradation mechanisms of wire-bonding crack propagation and complete lift-off are explored. Simulations are validated through the power cycling tests. The trend of measured forward voltage V CE(on) is similar to the simulation result. The modeling method and results can be used to evaluate the health status of IGBT module bond wires.

KW - IGBT

KW - Bond wires

KW - Crack

KW - Lift-off

KW - Electric parameter

KW - Finite element model

UR - http://www.scopus.com/inward/record.url?scp=85076784268&partnerID=8YFLogxK

U2 - 10.1109/ECCE.2019.8912236

DO - 10.1109/ECCE.2019.8912236

M3 - Article in proceeding

T3 - IEEE Energy Conversion Congress and Exposition

SP - 839

EP - 844

BT - Proceedings of 2019 IEEE Energy Conversion Congress and Exposition (ECCE)

PB - IEEE Press

T2 - 2019 IEEE Energy Conversion Congress and Exposition (ECCE)

Y2 - 29 September 2019 through 3 October 2019

ER -

Jiang M, Fu G, Ceccarelli L, Du H, Fogsgaard MB, Bahman AS et al. Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires. I Proceedings of 2019 IEEE Energy Conversion Congress and Exposition (ECCE) . IEEE Press. 2019. s. 839-844. 8912236. (IEEE Energy Conversion Congress and Exposition). doi: 10.1109/ECCE.2019.8912236

Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires

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Impact of Short-Circuit Events on the Remaining Useful Life of SiC MOSFETs and Mitigation Strategy

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