Frequency-Domain Thermal Modelling and Characterization of Power Semiconductor Devices

Ke Ma, Ning He, Marco Liserre, Frede Blaabjerg

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

152 Citationer (Scopus)
991 Downloads (Pure)

Abstract

The thermal behavior of power electronics devices has being a crucial design consideration because it is closely related to the reliability and also the cost of the converter system. Unfortunately, the widely used thermal models based on lumps of thermal resistances and capacitances have their limits to correctly predict the device temperatures, especially when considering the thermal grease and heat sink attached to the power semiconductor devices. In this paper, frequency-domain approach is applied to the modelling of the thermal dynamics for power devices. The limits of the existing RC lump-based thermal networks are explained from a point of view of frequency domain. Based on the discovery, a more advanced thermal model developed in the frequency domain is proposed, which can be easily established by characterizing the slope variation from the bode diagram of the typically used Foster thermal network. The proposed model can be used to predict not only the internal temperature behaviours of the devices but also the behaviours of heat flowing out of the devices. As a result, more correct estimation of device temperature can be achieved when considering the cooling conditions for the devices.
OriginalsprogEngelsk
TidsskriftI E E E Transactions on Power Electronics
Vol/bind31
Udgave nummer10
Sider (fra-til)7183-7193
Antal sider11
ISSN0885-8993
DOI
StatusUdgivet - okt. 2016

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