Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter

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Abstrakt

This paper investigates gate driver design challenges encountered due to the fast switching transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper presents, design of a reduced isolation capacitance regulated DC-DC power supply and a gate driver with an active Miller clamp circuit for a 10 kV half bridge SiC MOSFET power module. Designed power supply and the gate driver circuit are verified in a double pulse test setup and a continuous switching operation using the 10 kV half bridge silicon carbide MOSFET power module. An in-depth experimental verification and detailed test results are presented to validate the gate driver functionality. The designed gate driver circuit shows satisfactory performance with increased common mode noise immunity and protection against the Miller current induced unwanted turn on.
OriginalsprogEngelsk
TitelProceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
Antal sider10
ForlagIEEE Press
Publikationsdatosep. 2017
ISBN (Elektronisk)978-90-75815-27-6
DOI
StatusUdgivet - sep. 2017
Begivenhed2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) - Warsaw, Polen
Varighed: 11 sep. 201714 sep. 2017

Konference

Konference2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
LandPolen
ByWarsaw
Periode11/09/201714/09/2017

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