Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

8 Citationer (Scopus)
37 Downloads (Pure)

Resumé

This paper investigates gate driver design challenges encountered due to the fast switching transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper presents, design of a reduced isolation capacitance regulated DC-DC power supply and a gate driver with an active Miller clamp circuit for a 10 kV half bridge SiC MOSFET power module. Designed power supply and the gate driver circuit are verified in a double pulse test setup and a continuous switching operation using the 10 kV half bridge silicon carbide MOSFET power module. An in-depth experimental verification and detailed test results are presented to validate the gate driver functionality. The designed gate driver circuit shows satisfactory performance with increased common mode noise immunity and protection against the Miller current induced unwanted turn on.
OriginalsprogEngelsk
TitelProceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
Antal sider10
ForlagIEEE Press
Publikationsdatosep. 2017
ISBN (Elektronisk)978-90-75815-27-6
DOI
StatusUdgivet - sep. 2017
Begivenhed2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) - Warsaw, Polen
Varighed: 11 sep. 201714 sep. 2017

Konference

Konference2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
LandPolen
ByWarsaw
Periode11/09/201714/09/2017

Fingerprint

Silicon carbide
Networks (circuits)
Induced currents
Clamping devices
Capacitance
Electric potential
Power MOSFET

Citer dette

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title = "Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter",
abstract = "This paper investigates gate driver design challenges encountered due to the fast switching transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper presents, design of a reduced isolation capacitance regulated DC-DC power supply and a gate driver with an active Miller clamp circuit for a 10 kV half bridge SiC MOSFET power module. Designed power supply and the gate driver circuit are verified in a double pulse test setup and a continuous switching operation using the 10 kV half bridge silicon carbide MOSFET power module. An in-depth experimental verification and detailed test results are presented to validate the gate driver functionality. The designed gate driver circuit shows satisfactory performance with increased common mode noise immunity and protection against the Miller current induced unwanted turn on.",
keywords = "Wide bandgap devices, Silicon carbide (SiC), MOSFET, New switching devices, EMC/EMI",
author = "Dalal, {Dipen Narendra} and Nicklas Christensen and J{\o}rgensen, {Asger Bj{\o}rn} and S{\o}nderskov, {Simon Dyhr} and Szymon Beczkowski and Christian Uhrenfeldt and Stig Munk-Nielsen",
year = "2017",
month = "9",
doi = "10.23919/EPE17ECCEEurope.2017.8099274",
language = "English",
booktitle = "Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)",
publisher = "IEEE Press",

}

Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter. / Dalal, Dipen Narendra; Christensen, Nicklas; Jørgensen, Asger Bjørn; Sønderskov, Simon Dyhr; Beczkowski, Szymon; Uhrenfeldt, Christian; Munk-Nielsen, Stig.

Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe). IEEE Press, 2017.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

TY - GEN

T1 - Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter

AU - Dalal, Dipen Narendra

AU - Christensen, Nicklas

AU - Jørgensen, Asger Bjørn

AU - Sønderskov, Simon Dyhr

AU - Beczkowski, Szymon

AU - Uhrenfeldt, Christian

AU - Munk-Nielsen, Stig

PY - 2017/9

Y1 - 2017/9

N2 - This paper investigates gate driver design challenges encountered due to the fast switching transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper presents, design of a reduced isolation capacitance regulated DC-DC power supply and a gate driver with an active Miller clamp circuit for a 10 kV half bridge SiC MOSFET power module. Designed power supply and the gate driver circuit are verified in a double pulse test setup and a continuous switching operation using the 10 kV half bridge silicon carbide MOSFET power module. An in-depth experimental verification and detailed test results are presented to validate the gate driver functionality. The designed gate driver circuit shows satisfactory performance with increased common mode noise immunity and protection against the Miller current induced unwanted turn on.

AB - This paper investigates gate driver design challenges encountered due to the fast switching transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper presents, design of a reduced isolation capacitance regulated DC-DC power supply and a gate driver with an active Miller clamp circuit for a 10 kV half bridge SiC MOSFET power module. Designed power supply and the gate driver circuit are verified in a double pulse test setup and a continuous switching operation using the 10 kV half bridge silicon carbide MOSFET power module. An in-depth experimental verification and detailed test results are presented to validate the gate driver functionality. The designed gate driver circuit shows satisfactory performance with increased common mode noise immunity and protection against the Miller current induced unwanted turn on.

KW - Wide bandgap devices

KW - Silicon carbide (SiC)

KW - MOSFET

KW - New switching devices

KW - EMC/EMI

U2 - 10.23919/EPE17ECCEEurope.2017.8099274

DO - 10.23919/EPE17ECCEEurope.2017.8099274

M3 - Article in proceeding

BT - Proceedings of 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

PB - IEEE Press

ER -