General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

21 Citationer (Scopus)
864 Downloads (Pure)

Abstract

Accurate thermal dynamics modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is important information for the reliability analysis and thermal design of power electronic systems. However, the existing thermal models have their limits to correctly predict these complicated thermal behaviors in the IGBTs. In this paper, a new three-dimensional (3D) lumped thermal model is proposed, which can easily be characterized from Finite Element Methods (FEM) based simulation and acquire the thermal distribution in critical points. Meanwhile the boundary conditions including the cooling system and power losses are modeled in the 3D thermal model, which can be adapted to different real field applications of power electronic converters. The accuracy of the proposed thermal model is verified by experimental results.
OriginalsprogEngelsk
TitelProceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
Antal sider8
ForlagIEEE
Publikationsdatomar. 2016
Sider261 - 268
ISBN (Trykt)978-1-4673-8393-6 , 978-1-4673-9551-9
ISBN (Elektronisk)978-1-4673-9550-2
DOI
StatusUdgivet - mar. 2016
Begivenhed2016 IEEE Applied Power Electronics Conference and Exposition (APEC) - Long Beach Convention and Entertainment Center, Long Beach, USA
Varighed: 20 mar. 201624 mar. 2016
http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32616

Konference

Konference2016 IEEE Applied Power Electronics Conference and Exposition (APEC)
LokationLong Beach Convention and Entertainment Center
Land/OmrådeUSA
ByLong Beach
Periode20/03/201624/03/2016
Internetadresse

Fingeraftryk

Dyk ned i forskningsemnerne om 'General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules'. Sammen danner de et unikt fingeraftryk.

Citationsformater