General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules

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Resumé

Accurate thermal dynamics modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is important information for the reliability analysis and thermal design of power electronic systems. However, the existing thermal models have their limits to correctly predict these complicated thermal behaviors in the IGBTs. In this paper, a new three-dimensional (3D) lumped thermal model is proposed, which can easily be characterized from Finite Element Methods (FEM) based simulation and acquire the thermal distribution in critical points. Meanwhile the boundary conditions including the cooling system and power losses are modeled in the 3D thermal model, which can be adapted to different real field applications of power electronic converters. The accuracy of the proposed thermal model is verified by experimental results.
OriginalsprogEngelsk
TitelProceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
Antal sider8
ForlagIEEE
Publikationsdatomar. 2016
Sider261 - 268
ISBN (Trykt)978-1-4673-8393-6 , 978-1-4673-9551-9
ISBN (Elektronisk)978-1-4673-9550-2
DOI
StatusUdgivet - mar. 2016
Begivenhed2016 IEEE Applied Power Electronics Conference and Exposition (APEC) - Long Beach Convention and Entertainment Center, Long Beach, USA
Varighed: 20 mar. 201624 mar. 2016
http://www.ieee.org/conferences_events/conferences/conferencedetails/index.html?Conf_ID=32616

Konference

Konference2016 IEEE Applied Power Electronics Conference and Exposition (APEC)
LokationLong Beach Convention and Entertainment Center
LandUSA
ByLong Beach
Periode20/03/201624/03/2016
Internetadresse

Fingerprint

Insulated gate bipolar transistors (IGBT)
Boundary conditions
Power electronics
Hot Temperature
Power bipolar transistors
Reliability analysis
Cooling systems
Finite element method

Citer dette

Bahman, A. S., Ma, K., & Blaabjerg, F. (2016). General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules. I Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC) (s. 261 - 268). IEEE. https://doi.org/10.1109/APEC.2016.7467882
Bahman, Amir Sajjad ; Ma, Ke ; Blaabjerg, Frede. / General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules. Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2016. s. 261 - 268
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title = "General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules",
abstract = "Accurate thermal dynamics modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is important information for the reliability analysis and thermal design of power electronic systems. However, the existing thermal models have their limits to correctly predict these complicated thermal behaviors in the IGBTs. In this paper, a new three-dimensional (3D) lumped thermal model is proposed, which can easily be characterized from Finite Element Methods (FEM) based simulation and acquire the thermal distribution in critical points. Meanwhile the boundary conditions including the cooling system and power losses are modeled in the 3D thermal model, which can be adapted to different real field applications of power electronic converters. The accuracy of the proposed thermal model is verified by experimental results.",
keywords = "Insulated gate bipolar transistors, Thermal modeling, Boundary conditions, Finite element method, Reliability, Power electronic converters",
author = "Bahman, {Amir Sajjad} and Ke Ma and Frede Blaabjerg",
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Bahman, AS, Ma, K & Blaabjerg, F 2016, General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules. i Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, s. 261 - 268, Long Beach, USA, 20/03/2016. https://doi.org/10.1109/APEC.2016.7467882

General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules. / Bahman, Amir Sajjad; Ma, Ke; Blaabjerg, Frede.

Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE, 2016. s. 261 - 268.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

TY - GEN

T1 - General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules

AU - Bahman, Amir Sajjad

AU - Ma, Ke

AU - Blaabjerg, Frede

PY - 2016/3

Y1 - 2016/3

N2 - Accurate thermal dynamics modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is important information for the reliability analysis and thermal design of power electronic systems. However, the existing thermal models have their limits to correctly predict these complicated thermal behaviors in the IGBTs. In this paper, a new three-dimensional (3D) lumped thermal model is proposed, which can easily be characterized from Finite Element Methods (FEM) based simulation and acquire the thermal distribution in critical points. Meanwhile the boundary conditions including the cooling system and power losses are modeled in the 3D thermal model, which can be adapted to different real field applications of power electronic converters. The accuracy of the proposed thermal model is verified by experimental results.

AB - Accurate thermal dynamics modeling of high power Insulated Gate Bipolar Transistor (IGBT) modules is important information for the reliability analysis and thermal design of power electronic systems. However, the existing thermal models have their limits to correctly predict these complicated thermal behaviors in the IGBTs. In this paper, a new three-dimensional (3D) lumped thermal model is proposed, which can easily be characterized from Finite Element Methods (FEM) based simulation and acquire the thermal distribution in critical points. Meanwhile the boundary conditions including the cooling system and power losses are modeled in the 3D thermal model, which can be adapted to different real field applications of power electronic converters. The accuracy of the proposed thermal model is verified by experimental results.

KW - Insulated gate bipolar transistors

KW - Thermal modeling

KW - Boundary conditions

KW - Finite element method

KW - Reliability

KW - Power electronic converters

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DO - 10.1109/APEC.2016.7467882

M3 - Article in proceeding

SN - 978-1-4673-8393-6

SN - 978-1-4673-9551-9

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BT - Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

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Bahman AS, Ma K, Blaabjerg F. General 3D Lumped Thermal Model with Various Boundary Conditions for High Power IGBT Modules. I Proceedings of the 31st Annual IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE. 2016. s. 261 - 268 https://doi.org/10.1109/APEC.2016.7467882