High-frequency resonant operation of an integrated medium-voltage SiC MOSFET power module

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Resumé

Industrial processes which use induction and dielectric heating are still relying on resonant converters based on vacuum tubes. New emerging medium voltage silicon carbide semiconductor power devices have a potential to replace vacuum tubes and allow for more efficient and compact converters in the high frequency range. High voltage packages have been proposed in the literature that are suitable for the 10 kV silicon carbide MOSFETs, and its fast voltage switching capabilities in hard-switched applications have been demonstrated. However, no packaging is presented which allows the high frequency operation of a 10 kV silicon carbide MOSFET die. This paper proposes the design of a power module for MHz resonant operation of a 10 kV silicon carbide MOSFET. At high switching frequencies the gate losses become substantial, thus the gate driver is included inside the power module package to ensure a low inductive and high thermally conductive design as seen from the gate driver. The inductance of the proposed power module layout structure is evaluated using ANSYS Q3D Extractor. The thermal performance of the integrated gate driver circuitry is experimentally verified. Finally, the resonant operation of a medium voltage silicon carbide MOSFET power module is demonstrated experimentally at 1 MHz.
OriginalsprogEngelsk
TidsskriftIET Power Electronics
Antal sider8
ISSN1755-4535
DOI
StatusE-pub ahead of print - jun. 2019

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Silicon carbide
Natural frequencies
Electric potential
Electron tubes
Dielectric heating
Induction heating
Switching frequency
Inductance
Packaging
Power MOSFET

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title = "High-frequency resonant operation of an integrated medium-voltage SiC MOSFET power module",
abstract = "Industrial processes which use induction and dielectric heating are still relying on resonant converters based on vacuum tubes. New emerging medium voltage silicon carbide semiconductor power devices have a potential to replace vacuum tubes and allow for more efficient and compact converters in the high frequency range. High voltage packages have been proposed in the literature that are suitable for the 10 kV silicon carbide MOSFETs, and its fast voltage switching capabilities in hard-switched applications have been demonstrated. However, no packaging is presented which allows the high frequency operation of a 10 kV silicon carbide MOSFET die. This paper proposes the design of a power module for MHz resonant operation of a 10 kV silicon carbide MOSFET. At high switching frequencies the gate losses become substantial, thus the gate driver is included inside the power module package to ensure a low inductive and high thermally conductive design as seen from the gate driver. The inductance of the proposed power module layout structure is evaluated using ANSYS Q3D Extractor. The thermal performance of the integrated gate driver circuitry is experimentally verified. Finally, the resonant operation of a medium voltage silicon carbide MOSFET power module is demonstrated experimentally at 1 MHz.",
keywords = "SiC MOSFET, Power Module, Packaging, Resonant converter, High frequency power converter",
author = "J{\o}rgensen, {Asger Bj{\o}rn} and Aunsborg, {Thore Stig} and Beczkowski, {Szymon Michal} and Christian Uhrenfeldt and Stig Munk-Nielsen",
year = "2019",
month = "6",
doi = "10.1049/iet-pel.2019.0413",
language = "English",
journal = "IET Power Electronics",
issn = "1755-4535",
publisher = "Institution of Engineering and Technology",

}

TY - JOUR

T1 - High-frequency resonant operation of an integrated medium-voltage SiC MOSFET power module

AU - Jørgensen, Asger Bjørn

AU - Aunsborg, Thore Stig

AU - Beczkowski, Szymon Michal

AU - Uhrenfeldt, Christian

AU - Munk-Nielsen, Stig

PY - 2019/6

Y1 - 2019/6

N2 - Industrial processes which use induction and dielectric heating are still relying on resonant converters based on vacuum tubes. New emerging medium voltage silicon carbide semiconductor power devices have a potential to replace vacuum tubes and allow for more efficient and compact converters in the high frequency range. High voltage packages have been proposed in the literature that are suitable for the 10 kV silicon carbide MOSFETs, and its fast voltage switching capabilities in hard-switched applications have been demonstrated. However, no packaging is presented which allows the high frequency operation of a 10 kV silicon carbide MOSFET die. This paper proposes the design of a power module for MHz resonant operation of a 10 kV silicon carbide MOSFET. At high switching frequencies the gate losses become substantial, thus the gate driver is included inside the power module package to ensure a low inductive and high thermally conductive design as seen from the gate driver. The inductance of the proposed power module layout structure is evaluated using ANSYS Q3D Extractor. The thermal performance of the integrated gate driver circuitry is experimentally verified. Finally, the resonant operation of a medium voltage silicon carbide MOSFET power module is demonstrated experimentally at 1 MHz.

AB - Industrial processes which use induction and dielectric heating are still relying on resonant converters based on vacuum tubes. New emerging medium voltage silicon carbide semiconductor power devices have a potential to replace vacuum tubes and allow for more efficient and compact converters in the high frequency range. High voltage packages have been proposed in the literature that are suitable for the 10 kV silicon carbide MOSFETs, and its fast voltage switching capabilities in hard-switched applications have been demonstrated. However, no packaging is presented which allows the high frequency operation of a 10 kV silicon carbide MOSFET die. This paper proposes the design of a power module for MHz resonant operation of a 10 kV silicon carbide MOSFET. At high switching frequencies the gate losses become substantial, thus the gate driver is included inside the power module package to ensure a low inductive and high thermally conductive design as seen from the gate driver. The inductance of the proposed power module layout structure is evaluated using ANSYS Q3D Extractor. The thermal performance of the integrated gate driver circuitry is experimentally verified. Finally, the resonant operation of a medium voltage silicon carbide MOSFET power module is demonstrated experimentally at 1 MHz.

KW - SiC MOSFET

KW - Power Module

KW - Packaging

KW - Resonant converter

KW - High frequency power converter

U2 - 10.1049/iet-pel.2019.0413

DO - 10.1049/iet-pel.2019.0413

M3 - Journal article

JO - IET Power Electronics

JF - IET Power Electronics

SN - 1755-4535

ER -