Impact of Power Module Parasitic Capacitances on Medium Voltage SiC MOSFETs Switching Transients

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

65 Downloads (Pure)

Resumé

Increased switching speeds of WBG semiconductors result in a significant magnitude of the displacement currents through power module parasitic capacitances which are inherent in packaging design. This is of increasing concern particularly in case of newly emerging medium voltage SiC MOSFETs since the magnitude of the displacement currents can be several order higher due to the fast switching transients and increased voltage magnitudes of the SiC MOSFETs compared to their Si counter parts. The severity intensifies when the magnitude of the displacement current become comparable to a significant fraction of SiC MOSFETs rated current, leading to the worsened impact on the converter EMI as well as performance in terms of switching losses. The key objective of the paper is to provide a detail insight into the impact of the module parasitic capacitances on the SiC MOSFET switching dynamics and losses. To realize this, a well defined approach to dissect the switching energy dissipation is proposed, based on which the detail analysis and quantitative measurements of the module parasitic capacitance impact in terms of added switching energy losses and common mode currents is investigated using a custom packaged 10 kV half bridge SiC MOSFET power modules. The theoretical analysis and experimental results obtained from dynamic as well as static characterization reveals that the impact of the module parasitic capacitance on the switching energy dissipation is twofold and substantially adverse such that it can not be overlooked considering its intended application in the high power medium voltage power electronic converters.
OriginalsprogEngelsk
TidsskriftI E E E Journal of Emerging and Selected Topics in Power Electronics
ISSN2168-6777
DOI
StatusE-pub ahead of print - sep. 2019

Fingerprint

Capacitance
Electric potential
Energy dissipation
Power electronics
Packaging
Semiconductor materials

Citer dette

@article{7e451a75443c4040a3e650937e0cc44e,
title = "Impact of Power Module Parasitic Capacitances on Medium Voltage SiC MOSFETs Switching Transients",
abstract = "Increased switching speeds of WBG semiconductors result in a significant magnitude of the displacement currents through power module parasitic capacitances which are inherent in packaging design. This is of increasing concern particularly in case of newly emerging medium voltage SiC MOSFETs since the magnitude of the displacement currents can be several order higher due to the fast switching transients and increased voltage magnitudes of the SiC MOSFETs compared to their Si counter parts. The severity intensifies when the magnitude of the displacement current become comparable to a significant fraction of SiC MOSFETs rated current, leading to the worsened impact on the converter EMI as well as performance in terms of switching losses. The key objective of the paper is to provide a detail insight into the impact of the module parasitic capacitances on the SiC MOSFET switching dynamics and losses. To realize this, a well defined approach to dissect the switching energy dissipation is proposed, based on which the detail analysis and quantitative measurements of the module parasitic capacitance impact in terms of added switching energy losses and common mode currents is investigated using a custom packaged 10 kV half bridge SiC MOSFET power modules. The theoretical analysis and experimental results obtained from dynamic as well as static characterization reveals that the impact of the module parasitic capacitance on the switching energy dissipation is twofold and substantially adverse such that it can not be overlooked considering its intended application in the high power medium voltage power electronic converters.",
keywords = "Silicon Carbide, 10 kV SiC MOSFETs, Parasitic capacitance ,, Switching losses, EMI/EMC",
author = "Dalal, {Dipen Narendra} and Nicklas Christensen and J{\o}rgensen, {Asger Bj{\o}rn} and J{\o}rgensen, {Jannick Kj{\ae}r} and Beczkowski, {Szymon Michal} and Stig Munk-Nielsen and Christian Uhrenfeldt",
year = "2019",
month = "9",
doi = "10.1109/JESTPE.2019.2939644",
language = "English",
journal = "I E E E Journal of Emerging and Selected Topics in Power Electronics",
issn = "2168-6777",
publisher = "IEEE",

}

TY - JOUR

T1 - Impact of Power Module Parasitic Capacitances on Medium Voltage SiC MOSFETs Switching Transients

AU - Dalal, Dipen Narendra

AU - Christensen, Nicklas

AU - Jørgensen, Asger Bjørn

AU - Jørgensen, Jannick Kjær

AU - Beczkowski, Szymon Michal

AU - Munk-Nielsen, Stig

AU - Uhrenfeldt, Christian

PY - 2019/9

Y1 - 2019/9

N2 - Increased switching speeds of WBG semiconductors result in a significant magnitude of the displacement currents through power module parasitic capacitances which are inherent in packaging design. This is of increasing concern particularly in case of newly emerging medium voltage SiC MOSFETs since the magnitude of the displacement currents can be several order higher due to the fast switching transients and increased voltage magnitudes of the SiC MOSFETs compared to their Si counter parts. The severity intensifies when the magnitude of the displacement current become comparable to a significant fraction of SiC MOSFETs rated current, leading to the worsened impact on the converter EMI as well as performance in terms of switching losses. The key objective of the paper is to provide a detail insight into the impact of the module parasitic capacitances on the SiC MOSFET switching dynamics and losses. To realize this, a well defined approach to dissect the switching energy dissipation is proposed, based on which the detail analysis and quantitative measurements of the module parasitic capacitance impact in terms of added switching energy losses and common mode currents is investigated using a custom packaged 10 kV half bridge SiC MOSFET power modules. The theoretical analysis and experimental results obtained from dynamic as well as static characterization reveals that the impact of the module parasitic capacitance on the switching energy dissipation is twofold and substantially adverse such that it can not be overlooked considering its intended application in the high power medium voltage power electronic converters.

AB - Increased switching speeds of WBG semiconductors result in a significant magnitude of the displacement currents through power module parasitic capacitances which are inherent in packaging design. This is of increasing concern particularly in case of newly emerging medium voltage SiC MOSFETs since the magnitude of the displacement currents can be several order higher due to the fast switching transients and increased voltage magnitudes of the SiC MOSFETs compared to their Si counter parts. The severity intensifies when the magnitude of the displacement current become comparable to a significant fraction of SiC MOSFETs rated current, leading to the worsened impact on the converter EMI as well as performance in terms of switching losses. The key objective of the paper is to provide a detail insight into the impact of the module parasitic capacitances on the SiC MOSFET switching dynamics and losses. To realize this, a well defined approach to dissect the switching energy dissipation is proposed, based on which the detail analysis and quantitative measurements of the module parasitic capacitance impact in terms of added switching energy losses and common mode currents is investigated using a custom packaged 10 kV half bridge SiC MOSFET power modules. The theoretical analysis and experimental results obtained from dynamic as well as static characterization reveals that the impact of the module parasitic capacitance on the switching energy dissipation is twofold and substantially adverse such that it can not be overlooked considering its intended application in the high power medium voltage power electronic converters.

KW - Silicon Carbide

KW - 10 kV SiC MOSFETs

KW - Parasitic capacitance ,

KW - Switching losses

KW - EMI/EMC

U2 - 10.1109/JESTPE.2019.2939644

DO - 10.1109/JESTPE.2019.2939644

M3 - Journal article

JO - I E E E Journal of Emerging and Selected Topics in Power Electronics

JF - I E E E Journal of Emerging and Selected Topics in Power Electronics

SN - 2168-6777

ER -