Impact of Repetitive Short-Circuit Tests on the Normal Operation of SiC MOSFETs Considering Case Temperature Influence

He Du*, Paula Diaz Reigosa, Lorenzo Ceccarelli, Francesco Iannuzzo

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Resumé

This paper presents the impact of repetitive short-circuit tests on the normal operation of a commercial Silicon Carbide (SiC) MOSFET and the influence of different case temperatures on the short-circuit degradation process. To ensure repeatable short-circuit test conditions, the maximum short-circuit withstanding time is studied at three different case temperatures, and the critical energy is identified. In order to investigate the effect of short-circuit stress on the normal operation, the static and dynamic characteristics are periodically measured along with repetitive short-circuit activity. The turn-on switching loss increases gradually with the increasing number of repetitive short-circuit tests. This is associated with the increase of the gate leakage current during the short circuit tests, which shows a reduction of the on-state gate voltage because of the gate oxide degradation. Then, since the case temperature of the device is subject to the operating condition in the application, the degradation process of repetitive short-circuit tests with respect to different case temperatures are investigated, and the relationship between the number of repetitions to failure and the initial case temperature is established. Finally, the case temperature influence is explained by a 1-D transient thermal model based on the short-circuit condition.
OriginalsprogEngelsk
TidsskriftIEEE Journal of Emerging and Selected Topics in Power Electronics
Antal sider11
ISSN2168-6777
DOI
StatusE-pub ahead of print - 2020

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Silicon carbide
Short circuit currents
Temperature
Degradation
Leakage currents
Oxides
Electric potential

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title = "Impact of Repetitive Short-Circuit Tests on the Normal Operation of SiC MOSFETs Considering Case Temperature Influence",
abstract = "This paper presents the impact of repetitive short-circuit tests on the normal operation of a commercial Silicon Carbide (SiC) MOSFET and the influence of different case temperatures on the short-circuit degradation process. To ensure repeatable short-circuit test conditions, the maximum short-circuit withstanding time is studied at three different case temperatures, and the critical energy is identified. In order to investigate the effect of short-circuit stress on the normal operation, the static and dynamic characteristics are periodically measured along with repetitive short-circuit activity. The turn-on switching loss increases gradually with the increasing number of repetitive short-circuit tests. This is associated with the increase of the gate leakage current during the short circuit tests, which shows a reduction of the on-state gate voltage because of the gate oxide degradation. Then, since the case temperature of the device is subject to the operating condition in the application, the degradation process of repetitive short-circuit tests with respect to different case temperatures are investigated, and the relationship between the number of repetitions to failure and the initial case temperature is established. Finally, the case temperature influence is explained by a 1-D transient thermal model based on the short-circuit condition.",
keywords = "Temperature, Degradation, Power MOSFET, Short Circuit, Silicon Carbide, Switching Characteristic",
author = "He Du and Reigosa, {Paula Diaz} and Lorenzo Ceccarelli and Francesco Iannuzzo",
year = "2020",
doi = "10.1109/JESTPE.2019.2942364",
language = "English",
journal = "I E E E Journal of Emerging and Selected Topics in Power Electronics",
issn = "2168-6777",
publisher = "IEEE",

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Impact of Repetitive Short-Circuit Tests on the Normal Operation of SiC MOSFETs Considering Case Temperature Influence. / Du, He; Reigosa, Paula Diaz; Ceccarelli, Lorenzo; Iannuzzo, Francesco.

I: IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

TY - JOUR

T1 - Impact of Repetitive Short-Circuit Tests on the Normal Operation of SiC MOSFETs Considering Case Temperature Influence

AU - Du, He

AU - Reigosa, Paula Diaz

AU - Ceccarelli, Lorenzo

AU - Iannuzzo, Francesco

PY - 2020

Y1 - 2020

N2 - This paper presents the impact of repetitive short-circuit tests on the normal operation of a commercial Silicon Carbide (SiC) MOSFET and the influence of different case temperatures on the short-circuit degradation process. To ensure repeatable short-circuit test conditions, the maximum short-circuit withstanding time is studied at three different case temperatures, and the critical energy is identified. In order to investigate the effect of short-circuit stress on the normal operation, the static and dynamic characteristics are periodically measured along with repetitive short-circuit activity. The turn-on switching loss increases gradually with the increasing number of repetitive short-circuit tests. This is associated with the increase of the gate leakage current during the short circuit tests, which shows a reduction of the on-state gate voltage because of the gate oxide degradation. Then, since the case temperature of the device is subject to the operating condition in the application, the degradation process of repetitive short-circuit tests with respect to different case temperatures are investigated, and the relationship between the number of repetitions to failure and the initial case temperature is established. Finally, the case temperature influence is explained by a 1-D transient thermal model based on the short-circuit condition.

AB - This paper presents the impact of repetitive short-circuit tests on the normal operation of a commercial Silicon Carbide (SiC) MOSFET and the influence of different case temperatures on the short-circuit degradation process. To ensure repeatable short-circuit test conditions, the maximum short-circuit withstanding time is studied at three different case temperatures, and the critical energy is identified. In order to investigate the effect of short-circuit stress on the normal operation, the static and dynamic characteristics are periodically measured along with repetitive short-circuit activity. The turn-on switching loss increases gradually with the increasing number of repetitive short-circuit tests. This is associated with the increase of the gate leakage current during the short circuit tests, which shows a reduction of the on-state gate voltage because of the gate oxide degradation. Then, since the case temperature of the device is subject to the operating condition in the application, the degradation process of repetitive short-circuit tests with respect to different case temperatures are investigated, and the relationship between the number of repetitions to failure and the initial case temperature is established. Finally, the case temperature influence is explained by a 1-D transient thermal model based on the short-circuit condition.

KW - Temperature

KW - Degradation

KW - Power MOSFET

KW - Short Circuit

KW - Silicon Carbide

KW - Switching Characteristic

U2 - 10.1109/JESTPE.2019.2942364

DO - 10.1109/JESTPE.2019.2942364

M3 - Journal article

JO - I E E E Journal of Emerging and Selected Topics in Power Electronics

JF - I E E E Journal of Emerging and Selected Topics in Power Electronics

SN - 2168-6777

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