Publikationer pr. år
Publikationer pr. år
- 9 resultater
Søgeresultater
-
2020
A Mitigation Strategy for the Short-Circuit Degradation in SiC MOSFETs
Du, H. & Iannuzzo, F., 2020, IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia 2020. IEEE, s. 1-4 4 s. 9360256Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review
Åben adgangFil2 Citationer (Scopus)36 Downloads (Pure) -
Effect of short-circuit degradation on the remaining useful lifetime of SiC MOSFETs and its failure analysis
Du, H., Letz, S., Baker, N., Goetz, T., Iannuzzo, F. & Schletz, A., nov. 2020, I: Microelectronics Reliability. 114, s. 1-5 5 s., 113784.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review
Åben adgangFil7 Citationer (Scopus)25 Downloads (Pure) -
Impact of Repetitive Short-Circuit Tests on the Normal Operation of SiC MOSFETs Considering Case Temperature Influence
Du, H., Reigosa, P. D., Ceccarelli, L. & Iannuzzo, F., mar. 2020, I: IEEE Journal of Emerging and Selected Topics in Power Electronics. 8, 1, s. 195-205 11 s., 8844745.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review
Åben adgangFil31 Citationer (Scopus)255 Downloads (Pure) -
Implications of Short-Circuit Degradation on the Aging Process in Accelerated Cycling Tests of SiC MOSFETs
Du, H., Baker, N. & Iannuzzo, F., aug. 2020, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, s. 202-205 4 s. 9170133. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review
Åben adgangFil2 Citationer (Scopus)41 Downloads (Pure) -
2019
Cost-Effective Prognostics of IGBT Bond Wires With Consideration of Temperature Swing
Hu, K., Liu, Z., Du, H., Ceccarelli, L., Iannuzzo, F., Blaabjerg, F. & Tasiu, I. A., 16 dec. 2019, I: I E E E Transactions on Power Electronics. 35, 7, s. 6773-6784 12 s.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review
Åben adgangFil13 Citationer (Scopus)93 Downloads (Pure) -
Finite Element Modeling of IGBT Modules to Explore the Correlation between Electric Parameters and Damage in Bond Wires
Jiang, M., Fu, G., Ceccarelli, L., Du, H., Fogsgaard, M. B., Bahman, A. S., Yang, Y. & Iannuzzo, F., sep. 2019, Proceedings of 2019 IEEE Energy Conversion Congress and Exposition (ECCE) . IEEE Press, s. 839-844 6 s. 8912236. (IEEE Energy Conversion Congress and Exposition).Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review
9 Citationer (Scopus) -
Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests
Du, H., Reigosa, P. D., Iannuzzo, F. & Ceccarelli, L., 24 maj 2019, 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019. IEEE Press, s. 332-337 6 s. 8722300. (I E E E Applied Power Electronics Conference and Exposition. Conference Proceedings).Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review
Åben adgangFil9 Citationer (Scopus)74 Downloads (Pure) -
Implications of short-circuit events on power cycling of 1.2-kV/20-A SiC MOSFET power modules
Du, H., Ceccarelli, L., Iannuzzo, F. & Reigosa, P. D., sep. 2019, I: Microelectronics Reliability. 100-101, s. 1-6 6 s., 113373.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review
Åben adgangFil3 Citationer (Scopus)69 Downloads (Pure) -
2018
Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules
Du, H., Reigosa, P. D., Iannuzzo, F. & Ceccarelli, L., 1 sep. 2018, I: Microelectronics Reliability. 88-90, s. 661-665 5 s.Publikation: Bidrag til tidsskrift › Konferenceartikel i tidsskrift › Forskning › peer review
Åben adgangFil10 Citationer (Scopus)201 Downloads (Pure)