Impact of Solder Degradation on VCE of IGBT Module: Experiments and Modeling

Y. Jia, Y. Huang, F. Xiao, H. Deng, Y. Duan, F. Iannuzzo

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Resumé

Solder degradation is one of the main packaging failure modes in insulated gate bipolar transistor (IGBT) modules, which is usually evaluated through the change of thermal resistance. However, due to the strong electro-thermal coupling in IGBT module, solder degradation also affects electrical characteristics, such as on-state voltage VCE. The impact mechanism of solder degradation on VCE is analyzed in this paper firstly. For the study of the solder degradation independently, a press-packing setup is designed for the accelerated aging test, which can remove the influence of bond wires degradation and significantly improve the experimental efficiency. Then, the IGBT equivalent resistance is defined, which conforms to Ohm’s law in calculation and can respond to the dynamic current in real time. So, it could be conveniently used in the finite element method-based simulation. Meanwhile, a realistic 3D degradation model of solder layer is constructed by image processing method. Furthermore, an electro-thermal coupling model based on finite element is constructed to study the impact of solder degradation on the electrical and thermal characteristics of IGBT. Finally, the proposed degradation mechanism is verified by simulation and experimental results.
OriginalsprogEngelsk
TidsskriftIEEE Journal of Emerging and Selected Topics in Power Electronics
ISSN2168-6777
DOI
StatusE-pub ahead of print - 2020

Fingerprint

Insulated gate bipolar transistors (IGBT)
Soldering alloys
Degradation
Experiments
Heat resistance
Failure modes
Packaging
Image processing
Aging of materials
Wire
Finite element method
Electric potential

Emneord

  • Insulated gate bipolar transistors
  • Degradation
  • Temperature
  • Thermal degradation
  • Thermal resistance
  • Finite element analysis
  • Insulated gate bipolar transistor (IGBT)
  • solder degradation
  • failure modes decoupling
  • electro-thermal model

Citer dette

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title = "Impact of Solder Degradation on VCE of IGBT Module: Experiments and Modeling",
abstract = "Solder degradation is one of the main packaging failure modes in insulated gate bipolar transistor (IGBT) modules, which is usually evaluated through the change of thermal resistance. However, due to the strong electro-thermal coupling in IGBT module, solder degradation also affects electrical characteristics, such as on-state voltage VCE. The impact mechanism of solder degradation on VCE is analyzed in this paper firstly. For the study of the solder degradation independently, a press-packing setup is designed for the accelerated aging test, which can remove the influence of bond wires degradation and significantly improve the experimental efficiency. Then, the IGBT equivalent resistance is defined, which conforms to Ohm’s law in calculation and can respond to the dynamic current in real time. So, it could be conveniently used in the finite element method-based simulation. Meanwhile, a realistic 3D degradation model of solder layer is constructed by image processing method. Furthermore, an electro-thermal coupling model based on finite element is constructed to study the impact of solder degradation on the electrical and thermal characteristics of IGBT. Finally, the proposed degradation mechanism is verified by simulation and experimental results.",
keywords = "Insulated gate bipolar transistors, Degradation, Temperature, Thermal degradation, Thermal resistance, Finite element analysis, Insulated gate bipolar transistor (IGBT), solder degradation, failure modes decoupling, electro-thermal model, Insulated gate bipolar transistor (IGBT), Solder degradation, Failure modes decoupling, Electro-thermal model",
author = "Y. Jia and Y. Huang and F. Xiao and H. Deng and Y. Duan and F. Iannuzzo",
year = "2020",
doi = "10.1109/JESTPE.2019.2928478",
language = "English",
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Impact of Solder Degradation on VCE of IGBT Module: Experiments and Modeling. / Jia, Y.; Huang, Y.; Xiao, F.; Deng, H.; Duan, Y.; Iannuzzo, F.

I: IEEE Journal of Emerging and Selected Topics in Power Electronics, 2020.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

TY - JOUR

T1 - Impact of Solder Degradation on VCE of IGBT Module: Experiments and Modeling

AU - Jia, Y.

AU - Huang, Y.

AU - Xiao, F.

AU - Deng, H.

AU - Duan, Y.

AU - Iannuzzo, F.

PY - 2020

Y1 - 2020

N2 - Solder degradation is one of the main packaging failure modes in insulated gate bipolar transistor (IGBT) modules, which is usually evaluated through the change of thermal resistance. However, due to the strong electro-thermal coupling in IGBT module, solder degradation also affects electrical characteristics, such as on-state voltage VCE. The impact mechanism of solder degradation on VCE is analyzed in this paper firstly. For the study of the solder degradation independently, a press-packing setup is designed for the accelerated aging test, which can remove the influence of bond wires degradation and significantly improve the experimental efficiency. Then, the IGBT equivalent resistance is defined, which conforms to Ohm’s law in calculation and can respond to the dynamic current in real time. So, it could be conveniently used in the finite element method-based simulation. Meanwhile, a realistic 3D degradation model of solder layer is constructed by image processing method. Furthermore, an electro-thermal coupling model based on finite element is constructed to study the impact of solder degradation on the electrical and thermal characteristics of IGBT. Finally, the proposed degradation mechanism is verified by simulation and experimental results.

AB - Solder degradation is one of the main packaging failure modes in insulated gate bipolar transistor (IGBT) modules, which is usually evaluated through the change of thermal resistance. However, due to the strong electro-thermal coupling in IGBT module, solder degradation also affects electrical characteristics, such as on-state voltage VCE. The impact mechanism of solder degradation on VCE is analyzed in this paper firstly. For the study of the solder degradation independently, a press-packing setup is designed for the accelerated aging test, which can remove the influence of bond wires degradation and significantly improve the experimental efficiency. Then, the IGBT equivalent resistance is defined, which conforms to Ohm’s law in calculation and can respond to the dynamic current in real time. So, it could be conveniently used in the finite element method-based simulation. Meanwhile, a realistic 3D degradation model of solder layer is constructed by image processing method. Furthermore, an electro-thermal coupling model based on finite element is constructed to study the impact of solder degradation on the electrical and thermal characteristics of IGBT. Finally, the proposed degradation mechanism is verified by simulation and experimental results.

KW - Insulated gate bipolar transistors

KW - Degradation

KW - Temperature

KW - Thermal degradation

KW - Thermal resistance

KW - Finite element analysis

KW - Insulated gate bipolar transistor (IGBT)

KW - solder degradation

KW - failure modes decoupling

KW - electro-thermal model

KW - Insulated gate bipolar transistor (IGBT)

KW - Solder degradation

KW - Failure modes decoupling

KW - Electro-thermal model

U2 - 10.1109/JESTPE.2019.2928478

DO - 10.1109/JESTPE.2019.2928478

M3 - Journal article

JO - I E E E Journal of Emerging and Selected Topics in Power Electronics

JF - I E E E Journal of Emerging and Selected Topics in Power Electronics

SN - 2168-6777

ER -