Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests

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Resumé

In this paper, the reliability of SiC MOSFETs under repetitive short-circuit conditions is investigated. At first, the maximum short-circuit withstanding time is studied at three different case temperatures and the critical energy is identified in each case. Thereafter, the repetitive short-circuit tests are performed with fixed pulse time duration and bias voltage. The increasing gate leakage current measured at the interval of repetitive short-circuit tests is observed and the gate oxide failure is confirmed. Then, the results of repetitive short-circuit tests with respect to different case temperatures are presented, which helps to find a correlation between the number of repetitions to failure and the initial case temperature. The impact of repetitive short-circuit tests on the bond wire resistance is also analyzed.
OriginalsprogEngelsk
TitelProceedings of 2019 IEEE Annual Applied Power Electronics Conference and Exposition (APEC 2019)
Antal sider6
ForlagIEEE Press
Publikationsdatomar. 2019
Sider332-337
ISBN (Trykt)978-1-5386-8331-6
ISBN (Elektronisk)978-1-5386-8330-9
DOI
StatusUdgivet - mar. 2019
Begivenhed34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 - Anaheim, USA
Varighed: 17 mar. 201921 mar. 2019

Konference

Konference34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
LandUSA
ByAnaheim
Periode17/03/201921/03/2019
SponsorIEEE Industry Applications Society (IAS), IEEE Power Electronics Society (PELS), Power Sources Manufacturers Association (PSMA)

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Short circuit currents
Temperature
Bias voltage
Leakage currents
Wire
Oxides

Citer dette

Du, H., Reigosa, P. D., Iannuzzo, F., & Ceccarelli, L. (2019). Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests. I Proceedings of 2019 IEEE Annual Applied Power Electronics Conference and Exposition (APEC 2019) (s. 332-337). IEEE Press. https://doi.org/10.1109/APEC.2019.8722300
Du, He ; Reigosa, Paula Diaz ; Iannuzzo, Francesco ; Ceccarelli, Lorenzo. / Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests. Proceedings of 2019 IEEE Annual Applied Power Electronics Conference and Exposition (APEC 2019). IEEE Press, 2019. s. 332-337
@inproceedings{900731ff80a142dcb747950f04eb831c,
title = "Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests",
abstract = "In this paper, the reliability of SiC MOSFETs under repetitive short-circuit conditions is investigated. At first, the maximum short-circuit withstanding time is studied at three different case temperatures and the critical energy is identified in each case. Thereafter, the repetitive short-circuit tests are performed with fixed pulse time duration and bias voltage. The increasing gate leakage current measured at the interval of repetitive short-circuit tests is observed and the gate oxide failure is confirmed. Then, the results of repetitive short-circuit tests with respect to different case temperatures are presented, which helps to find a correlation between the number of repetitions to failure and the initial case temperature. The impact of repetitive short-circuit tests on the bond wire resistance is also analyzed.",
keywords = "Silicon carbide, Power MOSFET, Short-circuit test, Case temperature",
author = "He Du and Reigosa, {Paula Diaz} and Francesco Iannuzzo and Lorenzo Ceccarelli",
year = "2019",
month = "3",
doi = "10.1109/APEC.2019.8722300",
language = "English",
isbn = "978-1-5386-8331-6",
pages = "332--337",
booktitle = "Proceedings of 2019 IEEE Annual Applied Power Electronics Conference and Exposition (APEC 2019)",
publisher = "IEEE Press",

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Du, H, Reigosa, PD, Iannuzzo, F & Ceccarelli, L 2019, Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests. i Proceedings of 2019 IEEE Annual Applied Power Electronics Conference and Exposition (APEC 2019). IEEE Press, s. 332-337, Anaheim, USA, 17/03/2019. https://doi.org/10.1109/APEC.2019.8722300

Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests. / Du, He; Reigosa, Paula Diaz; Iannuzzo, Francesco; Ceccarelli, Lorenzo.

Proceedings of 2019 IEEE Annual Applied Power Electronics Conference and Exposition (APEC 2019). IEEE Press, 2019. s. 332-337.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

TY - GEN

T1 - Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests

AU - Du, He

AU - Reigosa, Paula Diaz

AU - Iannuzzo, Francesco

AU - Ceccarelli, Lorenzo

PY - 2019/3

Y1 - 2019/3

N2 - In this paper, the reliability of SiC MOSFETs under repetitive short-circuit conditions is investigated. At first, the maximum short-circuit withstanding time is studied at three different case temperatures and the critical energy is identified in each case. Thereafter, the repetitive short-circuit tests are performed with fixed pulse time duration and bias voltage. The increasing gate leakage current measured at the interval of repetitive short-circuit tests is observed and the gate oxide failure is confirmed. Then, the results of repetitive short-circuit tests with respect to different case temperatures are presented, which helps to find a correlation between the number of repetitions to failure and the initial case temperature. The impact of repetitive short-circuit tests on the bond wire resistance is also analyzed.

AB - In this paper, the reliability of SiC MOSFETs under repetitive short-circuit conditions is investigated. At first, the maximum short-circuit withstanding time is studied at three different case temperatures and the critical energy is identified in each case. Thereafter, the repetitive short-circuit tests are performed with fixed pulse time duration and bias voltage. The increasing gate leakage current measured at the interval of repetitive short-circuit tests is observed and the gate oxide failure is confirmed. Then, the results of repetitive short-circuit tests with respect to different case temperatures are presented, which helps to find a correlation between the number of repetitions to failure and the initial case temperature. The impact of repetitive short-circuit tests on the bond wire resistance is also analyzed.

KW - Silicon carbide

KW - Power MOSFET

KW - Short-circuit test

KW - Case temperature

UR - https://ieeexplore.ieee.org/abstract/document/8722300

U2 - 10.1109/APEC.2019.8722300

DO - 10.1109/APEC.2019.8722300

M3 - Article in proceeding

SN - 978-1-5386-8331-6

SP - 332

EP - 337

BT - Proceedings of 2019 IEEE Annual Applied Power Electronics Conference and Exposition (APEC 2019)

PB - IEEE Press

ER -

Du H, Reigosa PD, Iannuzzo F, Ceccarelli L. Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests. I Proceedings of 2019 IEEE Annual Applied Power Electronics Conference and Exposition (APEC 2019). IEEE Press. 2019. s. 332-337 https://doi.org/10.1109/APEC.2019.8722300