Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests

He Du, Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli

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Abstrakt

In this paper, the reliability of SiC MOSFETs under repetitive short-circuit conditions is investigated. At first, the maximum short-circuit withstanding time is studied at three different case temperatures and the critical energy is identified in each case. Thereafter, the repetitive short-circuit tests are performed with fixed pulse time duration and bias voltage. The increasing gate leakage current measured at the interval of repetitive short-circuit tests is observed and the gate oxide failure is confirmed. Then, the results of repetitive short-circuit tests with respect to different case temperatures are presented, which helps to find a correlation between the number of repetitions to failure and the initial case temperature. The impact of repetitive short-circuit tests on the bond wire resistance is also analyzed.
OriginalsprogEngelsk
Titel34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
Antal sider6
ForlagIEEE Press
Publikationsdato24 maj 2019
Sider332-337
Artikelnummer8722300
ISBN (Trykt)978-1-5386-8331-6
ISBN (Elektronisk)978-1-5386-8330-9
DOI
StatusUdgivet - 24 maj 2019
Begivenhed34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 - Anaheim, USA
Varighed: 17 mar. 201921 mar. 2019

Konference

Konference34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
LandUSA
ByAnaheim
Periode17/03/201921/03/2019
SponsorIEEE Industry Applications Society (IAS), IEEE Power Electronics Society (PELS), Power Sources Manufacturers Association (PSMA)
NavnI E E E Applied Power Electronics Conference and Exposition. Conference Proceedings
ISSN1048-2334

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  • Projekter

    Center Of Reliable Power Electronics (CORPE)

    Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.

    01/04/201131/12/2016

    Projekter: ProjektForskning

    Citationsformater

    Du, H., Reigosa, P. D., Iannuzzo, F., & Ceccarelli, L. (2019). Impact of the Case Temperature on the Reliability of SiC MOSFETs Under Repetitive Short Circuit Tests. I 34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 (s. 332-337). [8722300] IEEE Press. I E E E Applied Power Electronics Conference and Exposition. Conference Proceedings https://doi.org/10.1109/APEC.2019.8722300