Impedance-Oriented Transient Instability Modeling of SiC MOSFET Intruded by Measurement Probes

Zheng Zeng, X. Zhang, F. Blaabjerg, L. Miao

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Resumé

Due to the breakneck switching speed, SiC MOSFET is extremely sensitive to parasitics in the power device, circuit layout, and also measurement probe. It is not clear how the parasitics of measurement probes affect the transient stability of SiC MOSFET, and it poses an unsolved challenge for the industrial field. This paper is targeting to uncover the transient instability mechanism of SiC MOSFET intruded by probes. Mathematical and circuit models of voltage and current probes are created, by considering the parasitics, input impedance, and bandwidth issues. To reveal the stability principles of SiC MOSFET associated with probes, impedance-oriented and heterogeneity-synthesized models combining device with probes are proposed. Furthermore, an assessment methodology and root locus analysis are presented to demonstrate the transient stability schemes and the stable boundaries of SiC MOSFET influenced by multiple factors, including probe parasitics, device parameters, gate resistances, and snubber circuits. Comparative experiments are presented to confirm the transient behaviors of SiC MOSFET intruded by probe parasitics and regulated by control circuits. It is proven that, because of low bandwidth specifications, the large input capacitance of the voltage probe and coil inductance of the current probe degrade the transient stability of SiC MOSFET. Due to the deteriorated stability margin of SiC MOSFET intruded by the inserted parasitics of probes, instability may also be activated by using the small gate resistance. The snubber circuit is helpful to enhance the transient stability. Advanced probes with high bandwidth and high impedance are crucially needed for stable measurement of wide bandgap power devices like SiC MOSFET.
OriginalsprogEngelsk
TidsskriftIEEE Transactions on Power Electronics
Vol/bind35
Udgave nummer2
Sider (fra-til)1866-1881
Antal sider16
ISSN0885-8993
DOI
StatusUdgivet - feb. 2020

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Networks (circuits)
Bandwidth
Integrated circuit layout
Root loci
Electric potential
Inductance
Energy gap
Capacitance
Specifications
Experiments

Emneord

  • Probes
  • Silicon carbide
  • MOSFET
  • Bandwidth
  • Transient analysis
  • Impedance
  • Circuit stability
  • SiC MOSFET
  • transient instability
  • measurement probes
  • impedance modeling

Citer dette

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title = "Impedance-Oriented Transient Instability Modeling of SiC MOSFET Intruded by Measurement Probes",
abstract = "Due to the breakneck switching speed, SiC MOSFET is extremely sensitive to parasitics in the power device, circuit layout, and also measurement probe. It is not clear how the parasitics of measurement probes affect the transient stability of SiC MOSFET, and it poses an unsolved challenge for the industrial field. This paper is targeting to uncover the transient instability mechanism of SiC MOSFET intruded by probes. Mathematical and circuit models of voltage and current probes are created, by considering the parasitics, input impedance, and bandwidth issues. To reveal the stability principles of SiC MOSFET associated with probes, impedance-oriented and heterogeneity-synthesized models combining device with probes are proposed. Furthermore, an assessment methodology and root locus analysis are presented to demonstrate the transient stability schemes and the stable boundaries of SiC MOSFET influenced by multiple factors, including probe parasitics, device parameters, gate resistances, and snubber circuits. Comparative experiments are presented to confirm the transient behaviors of SiC MOSFET intruded by probe parasitics and regulated by control circuits. It is proven that, because of low bandwidth specifications, the large input capacitance of the voltage probe and coil inductance of the current probe degrade the transient stability of SiC MOSFET. Due to the deteriorated stability margin of SiC MOSFET intruded by the inserted parasitics of probes, instability may also be activated by using the small gate resistance. The snubber circuit is helpful to enhance the transient stability. Advanced probes with high bandwidth and high impedance are crucially needed for stable measurement of wide bandgap power devices like SiC MOSFET.",
keywords = "Probes, Silicon carbide, MOSFET, Bandwidth, Transient analysis, Impedance, Circuit stability, SiC MOSFET, transient instability, measurement probes, impedance modeling, SiC MOSFET, Transient instability, Measurement probes, Impedance modeling",
author = "Zheng Zeng and X. Zhang and F. Blaabjerg and L. Miao",
year = "2020",
month = "2",
doi = "10.1109/TPEL.2019.2922246",
language = "English",
volume = "35",
pages = "1866--1881",
journal = "I E E E Transactions on Power Electronics",
issn = "0885-8993",
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Impedance-Oriented Transient Instability Modeling of SiC MOSFET Intruded by Measurement Probes. / Zeng, Zheng; Zhang, X.; Blaabjerg, F.; Miao, L.

I: IEEE Transactions on Power Electronics, Bind 35, Nr. 2, 02.2020, s. 1866-1881.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

TY - JOUR

T1 - Impedance-Oriented Transient Instability Modeling of SiC MOSFET Intruded by Measurement Probes

AU - Zeng, Zheng

AU - Zhang, X.

AU - Blaabjerg, F.

AU - Miao, L.

PY - 2020/2

Y1 - 2020/2

N2 - Due to the breakneck switching speed, SiC MOSFET is extremely sensitive to parasitics in the power device, circuit layout, and also measurement probe. It is not clear how the parasitics of measurement probes affect the transient stability of SiC MOSFET, and it poses an unsolved challenge for the industrial field. This paper is targeting to uncover the transient instability mechanism of SiC MOSFET intruded by probes. Mathematical and circuit models of voltage and current probes are created, by considering the parasitics, input impedance, and bandwidth issues. To reveal the stability principles of SiC MOSFET associated with probes, impedance-oriented and heterogeneity-synthesized models combining device with probes are proposed. Furthermore, an assessment methodology and root locus analysis are presented to demonstrate the transient stability schemes and the stable boundaries of SiC MOSFET influenced by multiple factors, including probe parasitics, device parameters, gate resistances, and snubber circuits. Comparative experiments are presented to confirm the transient behaviors of SiC MOSFET intruded by probe parasitics and regulated by control circuits. It is proven that, because of low bandwidth specifications, the large input capacitance of the voltage probe and coil inductance of the current probe degrade the transient stability of SiC MOSFET. Due to the deteriorated stability margin of SiC MOSFET intruded by the inserted parasitics of probes, instability may also be activated by using the small gate resistance. The snubber circuit is helpful to enhance the transient stability. Advanced probes with high bandwidth and high impedance are crucially needed for stable measurement of wide bandgap power devices like SiC MOSFET.

AB - Due to the breakneck switching speed, SiC MOSFET is extremely sensitive to parasitics in the power device, circuit layout, and also measurement probe. It is not clear how the parasitics of measurement probes affect the transient stability of SiC MOSFET, and it poses an unsolved challenge for the industrial field. This paper is targeting to uncover the transient instability mechanism of SiC MOSFET intruded by probes. Mathematical and circuit models of voltage and current probes are created, by considering the parasitics, input impedance, and bandwidth issues. To reveal the stability principles of SiC MOSFET associated with probes, impedance-oriented and heterogeneity-synthesized models combining device with probes are proposed. Furthermore, an assessment methodology and root locus analysis are presented to demonstrate the transient stability schemes and the stable boundaries of SiC MOSFET influenced by multiple factors, including probe parasitics, device parameters, gate resistances, and snubber circuits. Comparative experiments are presented to confirm the transient behaviors of SiC MOSFET intruded by probe parasitics and regulated by control circuits. It is proven that, because of low bandwidth specifications, the large input capacitance of the voltage probe and coil inductance of the current probe degrade the transient stability of SiC MOSFET. Due to the deteriorated stability margin of SiC MOSFET intruded by the inserted parasitics of probes, instability may also be activated by using the small gate resistance. The snubber circuit is helpful to enhance the transient stability. Advanced probes with high bandwidth and high impedance are crucially needed for stable measurement of wide bandgap power devices like SiC MOSFET.

KW - Probes

KW - Silicon carbide

KW - MOSFET

KW - Bandwidth

KW - Transient analysis

KW - Impedance

KW - Circuit stability

KW - SiC MOSFET

KW - transient instability

KW - measurement probes

KW - impedance modeling

KW - SiC MOSFET

KW - Transient instability

KW - Measurement probes

KW - Impedance modeling

U2 - 10.1109/TPEL.2019.2922246

DO - 10.1109/TPEL.2019.2922246

M3 - Journal article

VL - 35

SP - 1866

EP - 1881

JO - I E E E Transactions on Power Electronics

JF - I E E E Transactions on Power Electronics

SN - 0885-8993

IS - 2

ER -