Abstract
In this paper, the reliability performance of 1.2-kV silicon carbide (SiC) power mosfet modules is investigated through the combination of both accelerated power-cycling tests and short-circuit tests. The short-circuit robustness of SiC mosfet is investigated after stressing the dies under power-cycling tests. In this way, the implications of different levels of degradation on the short-circuit capability can be better understood. During the power-cycling tests, some electrical parameters, either related to the package or the die, may experience variations as a consequence of the device ageing (e.g., increase in bond wire resistance and increase in gate leakage current). The effect of these parameter variations on the short-circuit withstanding capability of SiC mosfets is investigated for the first time in this paper. The proposed method helps to understand which degradation effects under normal operation have a major implication on the short-circuit robustness, which gives a more realistic information about the root cause of the failures observed in the field.
Originalsprog | Engelsk |
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Artikelnummer | 8634945 |
Tidsskrift | IEEE Transactions on Power Electronics |
Vol/bind | 34 |
Udgave nummer | 11 |
Sider (fra-til) | 11182 - 11190 |
Antal sider | 9 |
ISSN | 0885-8993 |
DOI | |
Status | Udgivet - nov. 2019 |
Emneord
- Logic gates
- Silicon carbide
- MOSFET
- Wires
- Degradation
- Reliability
- Junctions
- SiC MOSFET
- short circuit
- accelerated power cycling tests
- aging indicators
- thermal cycling
- Kelvin terminal
- gate-oxide
- reliability
- power semiconductor device