Implications of Ageing through Power Cycling on the Short Circuit Robustness of 1.2-kV SiC MOSFETs

Paula Diaz Reigosa, Haoze Luo, Francesco Iannuzzo

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

25 Citationer (Scopus)
241 Downloads (Pure)

Abstract

In this paper, the reliability performance of 1.2-kV silicon carbide (SiC) power mosfet modules is investigated through the combination of both accelerated power-cycling tests and short-circuit tests. The short-circuit robustness of SiC mosfet is investigated after stressing the dies under power-cycling tests. In this way, the implications of different levels of degradation on the short-circuit capability can be better understood. During the power-cycling tests, some electrical parameters, either related to the package or the die, may experience variations as a consequence of the device ageing (e.g., increase in bond wire resistance and increase in gate leakage current). The effect of these parameter variations on the short-circuit withstanding capability of SiC mosfets is investigated for the first time in this paper. The proposed method helps to understand which degradation effects under normal operation have a major implication on the short-circuit robustness, which gives a more realistic information about the root cause of the failures observed in the field.
OriginalsprogEngelsk
Artikelnummer8634945
TidsskriftIEEE Transactions on Power Electronics
Vol/bind34
Udgave nummer11
Sider (fra-til)11182 - 11190
Antal sider9
ISSN0885-8993
DOI
StatusUdgivet - nov. 2019

Emneord

  • Logic gates
  • Silicon carbide
  • MOSFET
  • Wires
  • Degradation
  • Reliability
  • Junctions
  • SiC MOSFET
  • short circuit
  • accelerated power cycling tests
  • aging indicators
  • thermal cycling
  • Kelvin terminal
  • gate-oxide
  • reliability
  • power semiconductor device

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