Implications of short-circuit events on power cycling of 1.2-kV/20-A SiC MOSFET power modules

He Du*, Lorenzo Ceccarelli, Francesco Iannuzzo, Paula Diaz Reigosa

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Resumé

When the device works in the real-field application, short-circuit events could happen along the whole lifetime of the component. In order to investigate the degradation effects of short-circuit events on power cycling, a mixed accelerated aging test combined with a repetitive short-circuit test has been performed for the 1.2-kV/20-A SiC MOSFET power module. The short-circuit robustness and repetitive short-circuit performance are analysed on the fresh device at first in order to understand the different levels of degradation. Then, the power cycling test is performed for two matched devices with the selected test conditions; one of them undergoes a number of short-circuit events and the other one, without short-circuit stress, is used as the reference. The experimental results exhibit a major implication of short-circuit degradation on power cycling and it would accelerate the degradation process of SiC MOSFETs.
OriginalsprogEngelsk
TidsskriftMicroelectronics Reliability
Vol/bind100-101
Sider (fra-til)1-6
Antal sider6
ISSN0026-2714
DOI
StatusUdgivet - sep. 2019

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short circuits
Short circuit currents
field effect transistors
cycles
degradation
Degradation
Power MOSFET
Aging of materials
life (durability)

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@inproceedings{685676714329474c81b05f63420b5860,
title = "Implications of short-circuit events on power cycling of 1.2-kV/20-A SiC MOSFET power modules",
abstract = "When the device works in the real-field application, short-circuit events could happen along the whole lifetime of the component. In order to investigate the degradation effects of short-circuit events on power cycling, a mixed accelerated aging test combined with a repetitive short-circuit test has been performed for the 1.2-kV/20-A SiC MOSFET power module. The short-circuit robustness and repetitive short-circuit performance are analysed on the fresh device at first in order to understand the different levels of degradation. Then, the power cycling test is performed for two matched devices with the selected test conditions; one of them undergoes a number of short-circuit events and the other one, without short-circuit stress, is used as the reference. The experimental results exhibit a major implication of short-circuit degradation on power cycling and it would accelerate the degradation process of SiC MOSFETs.",
keywords = "SiC MOSFET, SiC Power Module, Short-Circuit, Power cycling",
author = "He Du and Lorenzo Ceccarelli and Francesco Iannuzzo and Reigosa, {Paula Diaz}",
year = "2019",
month = "9",
doi = "https://doi.org/10.1016/j.microrel.2019.06.065",
language = "English",
volume = "100-101",
pages = "1--6",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Pergamon Press",

}

Implications of short-circuit events on power cycling of 1.2-kV/20-A SiC MOSFET power modules. / Du, He; Ceccarelli, Lorenzo; Iannuzzo, Francesco; Reigosa, Paula Diaz.

I: Microelectronics Reliability, Bind 100-101, 09.2019, s. 1-6.

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

TY - GEN

T1 - Implications of short-circuit events on power cycling of 1.2-kV/20-A SiC MOSFET power modules

AU - Du, He

AU - Ceccarelli, Lorenzo

AU - Iannuzzo, Francesco

AU - Reigosa, Paula Diaz

PY - 2019/9

Y1 - 2019/9

N2 - When the device works in the real-field application, short-circuit events could happen along the whole lifetime of the component. In order to investigate the degradation effects of short-circuit events on power cycling, a mixed accelerated aging test combined with a repetitive short-circuit test has been performed for the 1.2-kV/20-A SiC MOSFET power module. The short-circuit robustness and repetitive short-circuit performance are analysed on the fresh device at first in order to understand the different levels of degradation. Then, the power cycling test is performed for two matched devices with the selected test conditions; one of them undergoes a number of short-circuit events and the other one, without short-circuit stress, is used as the reference. The experimental results exhibit a major implication of short-circuit degradation on power cycling and it would accelerate the degradation process of SiC MOSFETs.

AB - When the device works in the real-field application, short-circuit events could happen along the whole lifetime of the component. In order to investigate the degradation effects of short-circuit events on power cycling, a mixed accelerated aging test combined with a repetitive short-circuit test has been performed for the 1.2-kV/20-A SiC MOSFET power module. The short-circuit robustness and repetitive short-circuit performance are analysed on the fresh device at first in order to understand the different levels of degradation. Then, the power cycling test is performed for two matched devices with the selected test conditions; one of them undergoes a number of short-circuit events and the other one, without short-circuit stress, is used as the reference. The experimental results exhibit a major implication of short-circuit degradation on power cycling and it would accelerate the degradation process of SiC MOSFETs.

KW - SiC MOSFET

KW - SiC Power Module

KW - Short-Circuit

KW - Power cycling

U2 - https://doi.org/10.1016/j.microrel.2019.06.065

DO - https://doi.org/10.1016/j.microrel.2019.06.065

M3 - Conference article in Journal

VL - 100-101

SP - 1

EP - 6

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

ER -