Improved Drain-source Voltage Detection Method for Short-circuit Protection of SiC MOSFET

Qiang Wang, Francesco Iannuzzo, Jingwei Zhang, Yizhan Jiang, Fengyou He

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

2 Citationer (Scopus)

Abstract

The importance of short-circuit protection in the driving scheme is self-evident, and the key is the realization of fast and accurate short-circuit fault detection. The traditional drain-source voltage (Vds) short-circuit detection method sacrifices the speed to ensure the reliability of short-circuit protection by setting a relatively large blanking time constant. However, the shorter short-circuit withstand time of SiC MOSFET puts forward a higher requirement of short-circuit protection. Therefore, the improved Vds short-circuit detection method proposed in this article enhances the self-adaptation to different short-circuit faults of SiC MOSFET, as a result speeding up the protection speed.

OriginalsprogEngelsk
Titel2022 IEEE International Workshop on Integrated Power Packaging, IWIPP 2022
ForlagIEEE Signal Processing Society
Publikationsdato2022
Artikelnummer10
ISBN (Elektronisk)9781728199337
DOI
StatusUdgivet - 2022
Begivenhed2022 IEEE International Workshop on Integrated Power Packaging, IWIPP 2022 - Grenoble, Frankrig
Varighed: 24 aug. 202226 aug. 2022

Konference

Konference2022 IEEE International Workshop on Integrated Power Packaging, IWIPP 2022
Land/OmrådeFrankrig
ByGrenoble
Periode24/08/202226/08/2022
Navn2022 IEEE International Workshop on Integrated Power Packaging, IWIPP 2022

Bibliografisk note

Funding Information:
This work was supported by the Postgraduate Research & Practice Innovation Program of Jiangsu Province under Grant KYCX21_ 2229.

Funding Information:
The authors would like to thank the China Scholarship Council (CSC) for providing the opportunity to visit Aalborg University.

Publisher Copyright:
© 2022 IEEE.

Fingeraftryk

Dyk ned i forskningsemnerne om 'Improved Drain-source Voltage Detection Method for Short-circuit Protection of SiC MOSFET'. Sammen danner de et unikt fingeraftryk.

Citationsformater