In search of a hole inversion layer in Pd/MoOx/Si diodes through I- V characterization using dedicated ring-shaped test structures

Gaurav Gupta, Shivakumar D. Thammaiah, Raymond J Hueting, Lis Karen Nanver

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Abstrakt

Palladium (Pd) capped molybdenum-oxide (MoO x) thin films deposited bye-beam evaporation on p- and n-type silicon (Si) substrates were investigated employing dedicated ring-shaped test structures. The results show diode characteristics on n-type Si with a high rectification of ~10 8 and a low leakage current of ~10 -11 A and an ohmic contact on p-type Si, as expected from the reported high workfunction of MoO x. Reports in the literature that an inversion layer of holes should be present at the MoO x/n-Si interface were investigated via various DC electrical measurements on lateral test structures, but no indication of any sianificant inversion was found.

OriginalsprogEngelsk
Titel2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019
Antal sider6
ForlagIEEE
Publikationsdato6 jun. 2019
Sider12-17
Artikelnummer8730920
ISBN (Trykt)978-1-7281-1464-4
ISBN (Elektronisk)9781728114668
DOI
StatusUdgivet - 6 jun. 2019
Begivenhed32nd IEEE International Conference on Microelectronic Test Structures - Fukuoka, Japan
Varighed: 18 mar. 201921 mar. 2019
Konferencens nummer: 32

Konference

Konference32nd IEEE International Conference on Microelectronic Test Structures
Nummer32
LandJapan
ByFukuoka
Periode18/03/201921/03/2019
NavnInternational Conference on Microelectronic Test Structures
ISSN2158-1029

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  • Citationsformater

    Gupta, G., Thammaiah, S. D., Hueting, R. J., & Nanver, L. K. (2019). In search of a hole inversion layer in Pd/MoOx/Si diodes through I- V characterization using dedicated ring-shaped test structures. I 2019 IEEE 32nd International Conference on Microelectronic Test Structures, ICMTS 2019 (s. 12-17). [8730920] IEEE. International Conference on Microelectronic Test Structures https://doi.org/10.1109/ICMTS.2019.8730920