Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

Suzan Meijs; Matthew McDonald; Søren Sørensen; Kristian Rechendorff; Vaclav Petrak; Milos Nesladek; Nico Rijkhoff; Cristian P. Pennisi

doi:10.5220/0005606401060109

Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

Suzan Meijs, Matthew McDonald, Søren Sørensen, Kristian Rechendorff, Vaclav Petrak, Milos Nesladek, Nico Rijkhoff, Cristian P. Pennisi

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

5 Citationer (Scopus)

Abstract

The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.

Originalsprog	Engelsk
Titel	Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal
Forlag	SCITEPRESS Digital Library
Publikationsdato	2015
Sider	106-109
ISBN (Trykt)	978-989-758-161-8
DOI	https://doi.org/10.5220/0005606401060109
Status	Udgivet - 2015
Begivenhed	International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX - Lisbon, Portugal Varighed: 16 nov. 2015 → 17 nov. 2015 Konferencens nummer: 3

Konference

Konference	International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX
Nummer	3
Land/Område	Portugal
By	Lisbon
Periode	16/11/2015 → 17/11/2015

Adgang til dokumentet

10.5220/0005606401060109

http://www.scitepress.org/Portal/PublicationsDetail.aspx?ID=IiqxHyQreLQ%3d&t=1

AUB Link

Søg efter materialet i Aalborg Universitetsbiblioteks søgemaskine

MERIDIAN: Micro and Nano Engineered Bi-Directional Carbon Interfaces for Advanced Peripheral Nervous System Prosthetics and Hybrid Bionics
Pennisi, P., Zachar, V., Alcaide, M. & Papaioannou, S.
European Commission
01/03/2012 → 28/02/2015
Projekter: Projekt › Forskning

Citationsformater

Meijs, S., McDonald, M., Sørensen, S., Rechendorff, K., Petrak, V., Nesladek, M., Rijkhoff, N., & Pennisi, C. P. (2015). Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films. I Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal (s. 106-109). SCITEPRESS Digital Library. https://doi.org/10.5220/0005606401060109

Meijs, Suzan ; McDonald, Matthew ; Sørensen, Søren et al. / Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films. Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal. SCITEPRESS Digital Library, 2015. s. 106-109

@inproceedings{7878af4bbf06448c82f76b4ce2fc257b,

title = "Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films",

abstract = "The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.",

author = "Suzan Meijs and Matthew McDonald and S{\o}ren S{\o}rensen and Kristian Rechendorff and Vaclav Petrak and Milos Nesladek and Nico Rijkhoff and Pennisi, {Cristian P.}",

year = "2015",

doi = "10.5220/0005606401060109",

language = "English",

isbn = "978-989-758-161-8",

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booktitle = "Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal",

publisher = "SCITEPRESS Digital Library",

note = "International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX ; Conference date: 16-11-2015 Through 17-11-2015",

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Meijs, S, McDonald, M, Sørensen, S, Rechendorff, K, Petrak, V, Nesladek, M, Rijkhoff, N & Pennisi, CP 2015, Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films. i Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal. SCITEPRESS Digital Library, s. 106-109, International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX, Lisbon, Portugal, 16/11/2015. https://doi.org/10.5220/0005606401060109

Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films. / Meijs, Suzan; McDonald, Matthew; Sørensen, Søren et al.
Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal. SCITEPRESS Digital Library, 2015. s. 106-109.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

AU - Meijs, Suzan

AU - McDonald, Matthew

AU - Sørensen, Søren

AU - Rechendorff, Kristian

AU - Petrak, Vaclav

AU - Nesladek, Milos

AU - Rijkhoff, Nico

AU - Pennisi, Cristian P.

N1 - Conference code: 3

PY - 2015

Y1 - 2015

N2 - The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.

AB - The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.

U2 - 10.5220/0005606401060109

DO - 10.5220/0005606401060109

M3 - Article in proceeding

SN - 978-989-758-161-8

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BT - Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal

PB - SCITEPRESS Digital Library

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Y2 - 16 November 2015 through 17 November 2015

ER -

Meijs S, McDonald M, Sørensen S, Rechendorff K, Petrak V, Nesladek M et al. Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films. I Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal. SCITEPRESS Digital Library. 2015. s. 106-109 doi: 10.5220/0005606401060109

Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

Abstract

Konference

Adgang til dokumentet

AUB Link

Fingeraftryk

Projekter

MERIDIAN: Micro and Nano Engineered Bi-Directional Carbon Interfaces for Advanced Peripheral Nervous System Prosthetics and Hybrid Bionics

Citationsformater