Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

Suzan Meijs, Matthew McDonald, Søren Sørensen, Kristian Rechendorff, Vaclav Petrak, Milos Nesladek, Nico Rijkhoff, Cristian P. Pennisi

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

4 Citationer (Scopus)

Resumé

The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.
OriginalsprogEngelsk
TitelProceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal
ForlagSCITEPRESS Digital Library
Publikationsdato2015
Sider106-109
ISBN (Trykt)978-989-758-161-8
DOI
StatusUdgivet - 2015
BegivenhedInternational Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX - Lisbon, Portugal
Varighed: 16 nov. 201517 nov. 2015
Konferencens nummer: 3

Konference

KonferenceInternational Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX
Nummer3
LandPortugal
ByLisbon
Periode16/11/201517/11/2015

Fingerprint

Boron
Diamond films
Diamond
Electrodes
Charge injection
titanium nitride
Capacitance
Coatings

Citer dette

Meijs, S., McDonald, M., Sørensen, S., Rechendorff, K., Petrak, V., Nesladek, M., ... Pennisi, C. P. (2015). Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films. I Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal (s. 106-109). SCITEPRESS Digital Library. https://doi.org/10.5220/0005606401060109
Meijs, Suzan ; McDonald, Matthew ; Sørensen, Søren ; Rechendorff, Kristian ; Petrak, Vaclav ; Nesladek, Milos ; Rijkhoff, Nico ; Pennisi, Cristian P. / Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films. Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal. SCITEPRESS Digital Library, 2015. s. 106-109
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title = "Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films",
abstract = "The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.",
author = "Suzan Meijs and Matthew McDonald and S{\o}ren S{\o}rensen and Kristian Rechendorff and Vaclav Petrak and Milos Nesladek and Nico Rijkhoff and Pennisi, {Cristian P.}",
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Meijs, S, McDonald, M, Sørensen, S, Rechendorff, K, Petrak, V, Nesladek, M, Rijkhoff, N & Pennisi, CP 2015, Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films. i Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal. SCITEPRESS Digital Library, s. 106-109, International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX, Lisbon, Portugal, 16/11/2015. https://doi.org/10.5220/0005606401060109

Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films. / Meijs, Suzan; McDonald, Matthew; Sørensen, Søren; Rechendorff, Kristian; Petrak, Vaclav; Nesladek, Milos; Rijkhoff, Nico; Pennisi, Cristian P.

Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal. SCITEPRESS Digital Library, 2015. s. 106-109.

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

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T1 - Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films

AU - Meijs, Suzan

AU - McDonald, Matthew

AU - Sørensen, Søren

AU - Rechendorff, Kristian

AU - Petrak, Vaclav

AU - Nesladek, Milos

AU - Rijkhoff, Nico

AU - Pennisi, Cristian P.

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AB - The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrystalline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.

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Meijs S, McDonald M, Sørensen S, Rechendorff K, Petrak V, Nesladek M et al. Increased charge storage capacity of titanium nitride electrodes by deposition of boron-doped nanocrystalline diamond films. I Proceedings of the 3rd International Congress on Neurotechnology, Electronics and Informatics, NEUROTECHNIX 2015, 16-17 November 2015, Lisbon, Portugal. SCITEPRESS Digital Library. 2015. s. 106-109 https://doi.org/10.5220/0005606401060109