Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability

Paula Diaz Reigosa; Francesco Iannuzzo; Munaf Rahimo; Chiara Corvasce; Frede Blaabjerg

doi:10.1109/APEC.2018.8341250

Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability

Paula Diaz Reigosa, Francesco Iannuzzo, Munaf Rahimo, Chiara Corvasce, Frede Blaabjerg

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

8 Citationer (Scopus)

385 Downloads (Pure)

Abstract

In this paper, a 3.3-kV Enhanced Trench IGBT has been designed with a high emitter efficiency, for improving its short-circuit robustness. The carrier distribution profile has been
shaped in a way that it is possible to increase the electric field at the surface of the IGBT, and thereby, counteract the Kirk Effect onset. This design approach is beneficial for mitigating
high-frequency oscillations, typically observed in IGBTs under short-circuit conditions. The effectiveness of the proposed design rule is validated by means of mixed-mode device simulations. Then, two IGBTs have been fabricated with different emitter efficiencies and tested under short circuit, validating that the high-frequency oscillations can be mitigated, with higher emitter efficiency IGBT designs.

Originalsprog	Engelsk
Titel	APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition
Antal sider	7
Forlag	IEEE
Publikationsdato	mar. 2018
Sider	1722-1728
ISBN (Trykt)	978-1-5386-1179-1
ISBN (Elektronisk)	978-1-5386-1180-7
DOI	https://doi.org/10.1109/APEC.2018.8341250
Status	Udgivet - mar. 2018
Begivenhed	33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018 - San Antonio, USA Varighed: 4 mar. 2018 → 8 mar. 2018

Konference

Konference	33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018
Land/Område	USA
By	San Antonio
Periode	04/03/2018 → 08/03/2018
Sponsor	IEEE Power Electronics Society (PELS), Industry Applications Society (IAS), Power Sources Manufacturers Association (PSMA)

Navn	IEEE Applied Power Electronics Conference and Exposition (APEC)
ISSN	2470-6647

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10.1109/APEC.2018.8341250

2018_Reigosa_APECIndsendt manuskript, 969 KB

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Citationsformater

@inproceedings{7c6013df90944d7daf4712455d3a8778,

title = "Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability",

abstract = "In this paper, a 3.3-kV Enhanced Trench IGBT has been designed with a high emitter efficiency, for improving its short-circuit robustness. The carrier distribution profile has beenshaped in a way that it is possible to increase the electric field at the surface of the IGBT, and thereby, counteract the Kirk Effect onset. This design approach is beneficial for mitigatinghigh-frequency oscillations, typically observed in IGBTs under short-circuit conditions. The effectiveness of the proposed design rule is validated by means of mixed-mode device simulations. Then, two IGBTs have been fabricated with different emitter efficiencies and tested under short circuit, validating that the high-frequency oscillations can be mitigated, with higher emitter efficiency IGBT designs.",

author = "Reigosa, {Paula Diaz} and Francesco Iannuzzo and Munaf Rahimo and Chiara Corvasce and Frede Blaabjerg",

year = "2018",

month = mar,

doi = "10.1109/APEC.2018.8341250",

language = "English",

isbn = "978-1-5386-1179-1",

series = "IEEE Applied Power Electronics Conference and Exposition (APEC)",

publisher = "IEEE",

pages = "1722--1728",

booktitle = "APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition",

address = "United States",

note = "33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018 ; Conference date: 04-03-2018 Through 08-03-2018",

}

Reigosa, PD, Iannuzzo, F, Rahimo, M, Corvasce, C & Blaabjerg, F 2018, Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability. i APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition. IEEE, IEEE Applied Power Electronics Conference and Exposition (APEC), s. 1722-1728, 33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018, San Antonio, USA, 04/03/2018. https://doi.org/10.1109/APEC.2018.8341250

Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability. / Reigosa, Paula Diaz; Iannuzzo, Francesco; Rahimo, Munaf et al.
APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition. IEEE, 2018. s. 1722-1728 (IEEE Applied Power Electronics Conference and Exposition (APEC)).

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability

AU - Reigosa, Paula Diaz

AU - Iannuzzo, Francesco

AU - Rahimo, Munaf

AU - Corvasce, Chiara

AU - Blaabjerg, Frede

PY - 2018/3

Y1 - 2018/3

N2 - In this paper, a 3.3-kV Enhanced Trench IGBT has been designed with a high emitter efficiency, for improving its short-circuit robustness. The carrier distribution profile has beenshaped in a way that it is possible to increase the electric field at the surface of the IGBT, and thereby, counteract the Kirk Effect onset. This design approach is beneficial for mitigatinghigh-frequency oscillations, typically observed in IGBTs under short-circuit conditions. The effectiveness of the proposed design rule is validated by means of mixed-mode device simulations. Then, two IGBTs have been fabricated with different emitter efficiencies and tested under short circuit, validating that the high-frequency oscillations can be mitigated, with higher emitter efficiency IGBT designs.

AB - In this paper, a 3.3-kV Enhanced Trench IGBT has been designed with a high emitter efficiency, for improving its short-circuit robustness. The carrier distribution profile has beenshaped in a way that it is possible to increase the electric field at the surface of the IGBT, and thereby, counteract the Kirk Effect onset. This design approach is beneficial for mitigatinghigh-frequency oscillations, typically observed in IGBTs under short-circuit conditions. The effectiveness of the proposed design rule is validated by means of mixed-mode device simulations. Then, two IGBTs have been fabricated with different emitter efficiencies and tested under short circuit, validating that the high-frequency oscillations can be mitigated, with higher emitter efficiency IGBT designs.

UR - http://www.scopus.com/inward/record.url?scp=85046973002&partnerID=8YFLogxK

U2 - 10.1109/APEC.2018.8341250

DO - 10.1109/APEC.2018.8341250

M3 - Article in proceeding

SN - 978-1-5386-1179-1

T3 - IEEE Applied Power Electronics Conference and Exposition (APEC)

SP - 1722

EP - 1728

BT - APEC 2018 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition

PB - IEEE

T2 - 33rd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2018

Y2 - 4 March 2018 through 8 March 2018

ER -

Increasing emitter efficiency in 3.3-kV enhanced trench IGBTs for higher short-circuit capability

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