Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter

Lorenzo Ceccarelli, Haoze Luo, Francesco Iannuzzo

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

16 Citationer (Scopus)
244 Downloads (Pure)

Abstract

In this paper, the light emission of SiC MOSFETs during reverse conduction, caused by the Light Emission Diode (LED)-like behaviour of the body diode, is studied and investigated. The photoemission from a 1.2 kV/20 A commercial device has been measured experimentally using a silicon photodiode. A behavioural characterization of the light output under different junction temperatures and current values has been performed. This allows the implementation of a fast, inexpensive and non-invasive temperature sensing strategy for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction.
OriginalsprogEngelsk
TidsskriftMicroelectronics Reliability
Vol/bind88-90
Sider (fra-til)627-630
Antal sider4
ISSN0026-2714
DOI
StatusUdgivet - sep. 2018
Begivenhed29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - AKKC, Aalborg, Danmark
Varighed: 1 okt. 20185 okt. 2018
Konferencens nummer: 29th
http://www.esref2018conf.org/

Konference

Konference29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Nummer29th
LokationAKKC
Land/OmrådeDanmark
ByAalborg
Periode01/10/201805/10/2018
Internetadresse

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