Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter

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Resumé

In this paper, the light emission of SiC MOSFETs during reverse conduction, caused by the Light Emission Diode (LED)-like behaviour of the body diode, is studied and investigated. The photoemission from a 1.2 kV/20 A commercial device has been measured experimentally using a silicon photodiode. A behavioural characterization of the light output under different junction temperatures and current values has been performed. This allows the implementation of a fast, inexpensive and non-invasive temperature sensing strategy for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction.
OriginalsprogEngelsk
TidsskriftMicroelectronics Reliability
Vol/bind88-90
Sider (fra-til)627-630
Antal sider4
ISSN0026-2714
DOI
StatusUdgivet - sep. 2018
Begivenhed29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - AKKC, Aalborg, Danmark
Varighed: 1 okt. 20185 okt. 2018
Konferencens nummer: 29th
http://www.esref2018conf.org/

Konference

Konference29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Nummer29th
LokationAKKC
LandDanmark
ByAalborg
Periode01/10/201805/10/2018
Internetadresse

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Light emission
light emission
Diodes
field effect transistors
diodes
conduction
Photoemission
Silicon
Photodiodes
Temperature
photodiodes
temperature
high voltages
photoelectric emission
chips
output
Electric potential
silicon

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title = "Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter",
abstract = "In this paper, the light emission of SiC MOSFETs during reverse conduction, caused by the Light Emission Diode (LED)-like behaviour of the body diode, is studied and investigated. The photoemission from a 1.2 kV/20 A commercial device has been measured experimentally using a silicon photodiode. A behavioural characterization of the light output under different junction temperatures and current values has been performed. This allows the implementation of a fast, inexpensive and non-invasive temperature sensing strategy for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction.",
author = "Lorenzo Ceccarelli and Haoze Luo and Francesco Iannuzzo",
year = "2018",
month = "9",
doi = "10.1016/j.microrel.2018.07.027",
language = "English",
volume = "88-90",
pages = "627--630",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Pergamon Press",

}

Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter. / Ceccarelli, Lorenzo; Luo, Haoze; Iannuzzo, Francesco.

I: Microelectronics Reliability, Bind 88-90, 09.2018, s. 627-630.

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

TY - GEN

T1 - Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter

AU - Ceccarelli, Lorenzo

AU - Luo, Haoze

AU - Iannuzzo, Francesco

PY - 2018/9

Y1 - 2018/9

N2 - In this paper, the light emission of SiC MOSFETs during reverse conduction, caused by the Light Emission Diode (LED)-like behaviour of the body diode, is studied and investigated. The photoemission from a 1.2 kV/20 A commercial device has been measured experimentally using a silicon photodiode. A behavioural characterization of the light output under different junction temperatures and current values has been performed. This allows the implementation of a fast, inexpensive and non-invasive temperature sensing strategy for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction.

AB - In this paper, the light emission of SiC MOSFETs during reverse conduction, caused by the Light Emission Diode (LED)-like behaviour of the body diode, is studied and investigated. The photoemission from a 1.2 kV/20 A commercial device has been measured experimentally using a silicon photodiode. A behavioural characterization of the light output under different junction temperatures and current values has been performed. This allows the implementation of a fast, inexpensive and non-invasive temperature sensing strategy for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction.

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U2 - 10.1016/j.microrel.2018.07.027

DO - 10.1016/j.microrel.2018.07.027

M3 - Conference article in Journal

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SP - 627

EP - 630

JO - Microelectronics Reliability

JF - Microelectronics Reliability

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