Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter

Lorenzo Ceccarelli; Haoze Luo; Francesco Iannuzzo

doi:10.1016/j.microrel.2018.07.027

Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter

Lorenzo Ceccarelli, Haoze Luo, Francesco Iannuzzo

Publikation: Bidrag til tidsskrift › Konferenceartikel i tidsskrift › Forskning › peer review

13 Citationer (Scopus)

154 Downloads (Pure)

Abstrakt

In this paper, the light emission of SiC MOSFETs during reverse conduction, caused by the Light Emission Diode (LED)-like behaviour of the body diode, is studied and investigated. The photoemission from a 1.2 kV/20 A commercial device has been measured experimentally using a silicon photodiode. A behavioural characterization of the light output under different junction temperatures and current values has been performed. This allows the implementation of a fast, inexpensive and non-invasive temperature sensing strategy for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction.

Originalsprog	Engelsk
Tidsskrift	Microelectronics Reliability
Vol/bind	88-90
Sider (fra-til)	627-630
Antal sider	4
ISSN	0026-2714
DOI	https://doi.org/10.1016/j.microrel.2018.07.027
Status	Udgivet - sep. 2018
Begivenhed	29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - AKKC, Aalborg, Danmark Varighed: 1 okt. 2018 → 5 okt. 2018 Konferencens nummer: 29th http://www.esref2018conf.org/

Konference

Konference	29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Nummer	29th
Lokation	AKKC
Land/Område	Danmark
By	Aalborg
Periode	01/10/2018 → 05/10/2018
Internetadresse	http://www.esref2018conf.org/

Adgang til dokumentet

10.1016/j.microrel.2018.07.027

Investigating SiC MOSFET body diode’s light emission as Temperature-Sensitive Electrical ParameterAccepteret manuskript, 0,98 MBLicens: CC BY-NC-ND 4.0

AUB Link

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http://www.scopus.com/inward/record.url?scp=85054806376&partnerID=8YFLogxK

APETT: Advanced Power Electronic Technology and Tools
Blaabjerg, F., Munk-Nielsen, S., Iannuzzo, F., Wang, H., Uhrenfeldt, C., Beczkowski, S. M., Zhou, D., Choi, U., Jørgensen, A. B., Vernica, I., Sangwongwanich, A., Christensen, N., Ceccarelli, L., Nielsen, C. K., Bahman, A. S., Pedersen, K., Pedersen, K. B. & Kristensen, P. K.
Innovationsfonden
01/01/2017 → 30/06/2021
Projekter: Projekt › Forskning
Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Projekter: Projekt › Forskning

29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Lorenzo Ceccarelli (Deltager)
1 okt. 2018 → 5 okt. 2018
Aktivitet: Deltagelse i faglig begivenhed › Organisering af eller deltagelse i konference

Citationsformater

@inproceedings{cb7c59e00c0b4b6a9f49649cc6bf7421,

title = "Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter",

abstract = "In this paper, the light emission of SiC MOSFETs during reverse conduction, caused by the Light Emission Diode (LED)-like behaviour of the body diode, is studied and investigated. The photoemission from a 1.2 kV/20 A commercial device has been measured experimentally using a silicon photodiode. A behavioural characterization of the light output under different junction temperatures and current values has been performed. This allows the implementation of a fast, inexpensive and non-invasive temperature sensing strategy for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction.",

author = "Lorenzo Ceccarelli and Haoze Luo and Francesco Iannuzzo",

year = "2018",

month = sep,

doi = "10.1016/j.microrel.2018.07.027",

language = "English",

volume = "88-90",

pages = "627--630",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Pergamon Press",

note = "29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2018 ; Conference date: 01-10-2018 Through 05-10-2018",

url = "http://www.esref2018conf.org/",

}

TY - GEN

T1 - Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter

AU - Ceccarelli, Lorenzo

AU - Luo, Haoze

AU - Iannuzzo, Francesco

N1 - Conference code: 29th

PY - 2018/9

Y1 - 2018/9

N2 - In this paper, the light emission of SiC MOSFETs during reverse conduction, caused by the Light Emission Diode (LED)-like behaviour of the body diode, is studied and investigated. The photoemission from a 1.2 kV/20 A commercial device has been measured experimentally using a silicon photodiode. A behavioural characterization of the light output under different junction temperatures and current values has been performed. This allows the implementation of a fast, inexpensive and non-invasive temperature sensing strategy for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction.

AB - In this paper, the light emission of SiC MOSFETs during reverse conduction, caused by the Light Emission Diode (LED)-like behaviour of the body diode, is studied and investigated. The photoemission from a 1.2 kV/20 A commercial device has been measured experimentally using a silicon photodiode. A behavioural characterization of the light output under different junction temperatures and current values has been performed. This allows the implementation of a fast, inexpensive and non-invasive temperature sensing strategy for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction.

UR - http://www.scopus.com/inward/record.url?scp=85054806376&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2018.07.027

DO - 10.1016/j.microrel.2018.07.027

M3 - Conference article in Journal

SN - 0026-2714

VL - 88-90

SP - 627

EP - 630

JO - Microelectronics Reliability

JF - Microelectronics Reliability

T2 - 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis

Y2 - 1 October 2018 through 5 October 2018

ER -

Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter

Abstrakt

Konference

Adgang til dokumentet

AUB Link

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Fingeraftryk

Projekter

APETT: Advanced Power Electronic Technology and Tools

Center Of Reliable Power Electronics (CORPE)

Aktiviteter

29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis

Citationsformater