Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

1 Citation (Scopus)
20 Downloads (Pure)

Resumé

This paper provides a comprehensive investigation on both static characteristics and short-circuit performance of 1.2 kV SiC MOSFET power modules with 2nd generation planar technology. The experimental approach is based on the static characteristics measurements and the short-circuit tests with gradual increase of pulse time duration. If any variation of the static characteristics appears, the time duration of next short-circuit tests would keep the same with the last pulse duration (approach 1) or increase continuously (approach 2). The results of the short-circuit waveforms show a gate degradation which is further confirmed with the measurement of the gate leakage current. Additionally, other degradation indicators, including positive shift of threshold voltage, drain leakage current and on-state resistance increase are evidenced and discussed in this paper. These can be used for early prediction of the degradation and failure in the short-circuit conditions.
OriginalsprogEngelsk
TidsskriftMicroelectronics Reliability
Vol/bind88-90
Sider (fra-til)661-665
Antal sider5
ISSN0026-2714
DOI
StatusUdgivet - 1 sep. 2018
Begivenhed29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - AKKC, Aalborg, Danmark
Varighed: 1 okt. 20185 okt. 2018
Konferencens nummer: 29th
http://www.esref2018conf.org/

Konference

Konference29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Nummer29th
LokationAKKC
LandDanmark
ByAalborg
Periode01/10/201805/10/2018
Internetadresse

Fingerprint

short circuits
Short circuit currents
field effect transistors
static characteristics
degradation
Degradation
Leakage currents
leakage
Threshold voltage
threshold voltage
waveforms
pulse duration
Power MOSFET
shift
predictions
pulses

Citer dette

@inproceedings{9817e10605414306af985c9787280bae,
title = "Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules",
abstract = "This paper provides a comprehensive investigation on both static characteristics and short-circuit performance of 1.2 kV SiC MOSFET power modules with 2nd generation planar technology. The experimental approach is based on the static characteristics measurements and the short-circuit tests with gradual increase of pulse time duration. If any variation of the static characteristics appears, the time duration of next short-circuit tests would keep the same with the last pulse duration (approach 1) or increase continuously (approach 2). The results of the short-circuit waveforms show a gate degradation which is further confirmed with the measurement of the gate leakage current. Additionally, other degradation indicators, including positive shift of threshold voltage, drain leakage current and on-state resistance increase are evidenced and discussed in this paper. These can be used for early prediction of the degradation and failure in the short-circuit conditions.",
keywords = "SiC MOSFET, SiC power module, Short-circuit, Degradation indicators",
author = "He Du and Reigosa, {Paula Diaz} and Francesco Iannuzzo and Lorenzo Ceccarelli",
year = "2018",
month = "9",
day = "1",
doi = "10.1016/j.microrel.2018.06.039",
language = "English",
volume = "88-90",
pages = "661--665",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Pergamon Press",

}

Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules. / Du, He; Reigosa, Paula Diaz; Iannuzzo, Francesco; Ceccarelli, Lorenzo.

I: Microelectronics Reliability, Bind 88-90, 01.09.2018, s. 661-665.

Publikation: Bidrag til tidsskriftKonferenceartikel i tidsskriftForskningpeer review

TY - GEN

T1 - Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules

AU - Du, He

AU - Reigosa, Paula Diaz

AU - Iannuzzo, Francesco

AU - Ceccarelli, Lorenzo

PY - 2018/9/1

Y1 - 2018/9/1

N2 - This paper provides a comprehensive investigation on both static characteristics and short-circuit performance of 1.2 kV SiC MOSFET power modules with 2nd generation planar technology. The experimental approach is based on the static characteristics measurements and the short-circuit tests with gradual increase of pulse time duration. If any variation of the static characteristics appears, the time duration of next short-circuit tests would keep the same with the last pulse duration (approach 1) or increase continuously (approach 2). The results of the short-circuit waveforms show a gate degradation which is further confirmed with the measurement of the gate leakage current. Additionally, other degradation indicators, including positive shift of threshold voltage, drain leakage current and on-state resistance increase are evidenced and discussed in this paper. These can be used for early prediction of the degradation and failure in the short-circuit conditions.

AB - This paper provides a comprehensive investigation on both static characteristics and short-circuit performance of 1.2 kV SiC MOSFET power modules with 2nd generation planar technology. The experimental approach is based on the static characteristics measurements and the short-circuit tests with gradual increase of pulse time duration. If any variation of the static characteristics appears, the time duration of next short-circuit tests would keep the same with the last pulse duration (approach 1) or increase continuously (approach 2). The results of the short-circuit waveforms show a gate degradation which is further confirmed with the measurement of the gate leakage current. Additionally, other degradation indicators, including positive shift of threshold voltage, drain leakage current and on-state resistance increase are evidenced and discussed in this paper. These can be used for early prediction of the degradation and failure in the short-circuit conditions.

KW - SiC MOSFET

KW - SiC power module

KW - Short-circuit

KW - Degradation indicators

UR - http://www.scopus.com/inward/record.url?scp=85054854475&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2018.06.039

DO - 10.1016/j.microrel.2018.06.039

M3 - Conference article in Journal

VL - 88-90

SP - 661

EP - 665

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

ER -