TY - JOUR
T1 - Investigation on the Self-Sustained Oscillation of Superjunction MOSFET Intrinsic Diode
AU - Xue, P.
AU - Maresca, L.
AU - Riccio, M.
AU - Breglio, G.
AU - Irace, A.
PY - 2019
Y1 - 2019
N2 - This paper presents the analyses on the self-sustained oscillation of superjunction MOSFET intrinsic diode. At first, the characteristics of the self-sustained oscillation for the superjunction MOSFET intrinsic diode are identified by the double-pulse switching test. The test results show that the self-sustained oscillation with significant self-amplification phenomenon can be triggered during the reverse recovery transient of superjunction MOSFET intrinsic diode. Based on the Sentaurus TCAD simulation, the self-sustained oscillation is reproduced. The simulation results reveal the root cause of the self-sustained oscillation. Due to the snappy reverse recovery of superjunction MOSFET intrinsic diode, the steep slope of diode snap off current can generate high voltage across the common source inductance, which drives the gate-source voltage and turns on the high-side MOSFET. The unexpected MOSFET turn-on can, in return, enhance the steepness of the current slope when the diode snap off. This leads to a positive feedback process and self-sustained oscillation is generated. In the end, based on the theoretical analyses and experimental results, the necessary methods that can suppress the oscillation are presented.
AB - This paper presents the analyses on the self-sustained oscillation of superjunction MOSFET intrinsic diode. At first, the characteristics of the self-sustained oscillation for the superjunction MOSFET intrinsic diode are identified by the double-pulse switching test. The test results show that the self-sustained oscillation with significant self-amplification phenomenon can be triggered during the reverse recovery transient of superjunction MOSFET intrinsic diode. Based on the Sentaurus TCAD simulation, the self-sustained oscillation is reproduced. The simulation results reveal the root cause of the self-sustained oscillation. Due to the snappy reverse recovery of superjunction MOSFET intrinsic diode, the steep slope of diode snap off current can generate high voltage across the common source inductance, which drives the gate-source voltage and turns on the high-side MOSFET. The unexpected MOSFET turn-on can, in return, enhance the steepness of the current slope when the diode snap off. This leads to a positive feedback process and self-sustained oscillation is generated. In the end, based on the theoretical analyses and experimental results, the necessary methods that can suppress the oscillation are presented.
KW - oscillations
KW - power MOSFET
KW - power semiconductor diodes
KW - semiconductor device models
KW - semiconductor device testing
KW - technology CAD (electronics)
KW - wide band gap semiconductors
KW - gate-source voltage
KW - common source inductance
KW - diode snap off current
KW - Sentaurus TCAD simulation
KW - reverse recovery transient
KW - self-amplification phenomenon
KW - double-pulse switching test
KW - self-sustained oscillation
KW - superjunction MOSFET intrinsic diode
KW - MOSFET
KW - Oscillators
KW - P-i-n diodes
KW - Logic gates
KW - Inductance
KW - Integrated circuit modeling
KW - Transient analysis
KW - MOSFET intrinsic diode
KW - reverse recovery
KW - superjunction MOSFET
U2 - 10.1109/TED.2018.2881670
DO - 10.1109/TED.2018.2881670
M3 - Journal article
SN - 0018-9383
VL - 66
SP - 605
EP - 612
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 1
ER -