Infra-red measurements are used to assess the measurement accuracy of the Peak Gate Current (IGPeak) method for IGBT junction temperature measurement. Single IGBT chips with the gate pad in both the centre and the edge are investigated, along with paralleled chips, as well as chips suffering partial bond-wire lift-off. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current (VCE(low)). In all cases, the IGPeak method is found to provide a temperature slightly overestimating the temperature of the gate pad. Consequently, both the gate pad position and chip temperature distribution influence whether the measurement is representative of the mean junction temperature. These results remain consistent after chips are degraded through bondwire lift-off. In a paralleled IGBT configuration with non-negligible temperature disequilibrium between chips, the IGPeak method delivers a measurement based on the average temperature of the gate pads.