Junction temperature measurement in a power semiconductor module

Publikation: PatentForskning

Resumé

A method for determining the temperature of a power semiconductor, where the power semiconductor includes an auxiliary emitter terminal and an emitter terminal, and a resistance component arranged between. The resistance component is thermally coupled and/or integrated into the semiconductor die. The resistance component is arranged between the auxiliary emitter terminal and the emitter terminal, and lies in the path of the control current. The resistance component has a temperature dependent resistance characteristic. A measurement circuit is used to inject a sufficient sensing current, or apply a suitable voltage, to the resistance component between the auxiliary emitter and emitter terminals, in order to generate an output signal that is dependent on the temperature dependent resistance of the resistance component. The output signal can be assessed with respect to a predefined temperature characteristic curve, obtained through a calibration procedure. Thus, the temperature of the semiconductor is measured.
OriginalsprogEngelsk
IPCG01K 7/16 (2006.01)
PatentnummerWO/2018/086666
LandDanmark
Prioritetsdato08/11/2016
StatusUdgivet - 17 maj 2018

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Temperature measurement
Semiconductor materials
Temperature
Electric current control
Calibration
Networks (circuits)
Electric potential

Citer dette

Baker, N. R. (2018). IPC nr. G01K 7/16 (2006.01). Junction temperature measurement in a power semiconductor module. (Patentnummer WO/2018/086666).
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title = "Junction temperature measurement in a power semiconductor module",
abstract = "A method for determining the temperature of a power semiconductor, where the power semiconductor includes an auxiliary emitter terminal and an emitter terminal, and a resistance component arranged between. The resistance component is thermally coupled and/or integrated into the semiconductor die. The resistance component is arranged between the auxiliary emitter terminal and the emitter terminal, and lies in the path of the control current. The resistance component has a temperature dependent resistance characteristic. A measurement circuit is used to inject a sufficient sensing current, or apply a suitable voltage, to the resistance component between the auxiliary emitter and emitter terminals, in order to generate an output signal that is dependent on the temperature dependent resistance of the resistance component. The output signal can be assessed with respect to a predefined temperature characteristic curve, obtained through a calibration procedure. Thus, the temperature of the semiconductor is measured.",
author = "Baker, {Nicholas Raymond}",
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type = "Patent",
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Baker, NR 2018, Junction temperature measurement in a power semiconductor module, Patentnummer WO/2018/086666, IPC nr. G01K 7/16 (2006.01).

Junction temperature measurement in a power semiconductor module. / Baker, Nicholas Raymond (Opfinder).

IPC nr.: G01K 7/16 (2006.01). Patentnummer: WO/2018/086666.

Publikation: PatentForskning

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N2 - A method for determining the temperature of a power semiconductor, where the power semiconductor includes an auxiliary emitter terminal and an emitter terminal, and a resistance component arranged between. The resistance component is thermally coupled and/or integrated into the semiconductor die. The resistance component is arranged between the auxiliary emitter terminal and the emitter terminal, and lies in the path of the control current. The resistance component has a temperature dependent resistance characteristic. A measurement circuit is used to inject a sufficient sensing current, or apply a suitable voltage, to the resistance component between the auxiliary emitter and emitter terminals, in order to generate an output signal that is dependent on the temperature dependent resistance of the resistance component. The output signal can be assessed with respect to a predefined temperature characteristic curve, obtained through a calibration procedure. Thus, the temperature of the semiconductor is measured.

AB - A method for determining the temperature of a power semiconductor, where the power semiconductor includes an auxiliary emitter terminal and an emitter terminal, and a resistance component arranged between. The resistance component is thermally coupled and/or integrated into the semiconductor die. The resistance component is arranged between the auxiliary emitter terminal and the emitter terminal, and lies in the path of the control current. The resistance component has a temperature dependent resistance characteristic. A measurement circuit is used to inject a sufficient sensing current, or apply a suitable voltage, to the resistance component between the auxiliary emitter and emitter terminals, in order to generate an output signal that is dependent on the temperature dependent resistance of the resistance component. The output signal can be assessed with respect to a predefined temperature characteristic curve, obtained through a calibration procedure. Thus, the temperature of the semiconductor is measured.

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