Mission-Profile-Based Lifetime Prediction for a SiC MOSFET Power Module using a Multi-Step Condition-Mapping Simulation Strategy

Lorenzo Ceccarelli, Ramchandra Kotecha, Amir Sajjad Bahman, Francesco Iannuzzo, Alan Mantooth

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Resumé

The reliability analysis and lifetime prediction for SiC-based power modules is crucial in order to fulfill the design specifications for next-generation power converters. This paper presents a fast mission-profile-based simulation strategy for a commercial 1.2 kV all-SiC power module used in a photovoltaic (PV) inverter topology. The approach relies on a fast condition-mapping simulation structure and the detailed electro-thermal modeling of the module topology and devices. Both parasitic electrical elements and thermal impedance network are extracted from the finite-element analysis of the module geometry. The use of operating conditions mapping and look-up tables enables the simulation of very long timescales in only a few minutes, preserving at the same time the accuracy of circuit-based simulations. The accumulated damage related to thermo-mechanical stress on the module is determined analytically and a simple consumed lifetime calculation is performed for two different mission profiles and compared in different operating conditions.
OriginalsprogEngelsk
TidsskriftI E E E Transactions on Power Electronics
ISSN0885-8993
StatusAccepteret/In press - 15 jan. 2019

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Topology
Power converters
Reliability analysis
Specifications
Finite element method
Geometry
Networks (circuits)
Hot Temperature
Power MOSFET

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    @article{9ba819ca58724effa1a10d363ca1fdd7,
    title = "Mission-Profile-Based Lifetime Prediction for a SiC MOSFET Power Module using a Multi-Step Condition-Mapping Simulation Strategy",
    abstract = "The reliability analysis and lifetime prediction for SiC-based power modules is crucial in order to fulfill the design specifications for next-generation power converters. This paper presents a fast mission-profile-based simulation strategy for a commercial 1.2 kV all-SiC power module used in a photovoltaic (PV) inverter topology. The approach relies on a fast condition-mapping simulation structure and the detailed electro-thermal modeling of the module topology and devices. Both parasitic electrical elements and thermal impedance network are extracted from the finite-element analysis of the module geometry. The use of operating conditions mapping and look-up tables enables the simulation of very long timescales in only a few minutes, preserving at the same time the accuracy of circuit-based simulations. The accumulated damage related to thermo-mechanical stress on the module is determined analytically and a simple consumed lifetime calculation is performed for two different mission profiles and compared in different operating conditions.",
    keywords = "SiC MOSFET, lifetime estimation, Reliability Analysis, Electrothermal simulation, modeling",
    author = "Lorenzo Ceccarelli and Ramchandra Kotecha and Bahman, {Amir Sajjad} and Francesco Iannuzzo and Alan Mantooth",
    year = "2019",
    month = "1",
    day = "15",
    language = "English",
    journal = "I E E E Transactions on Power Electronics",
    issn = "0885-8993",
    publisher = "IEEE",

    }

    TY - JOUR

    T1 - Mission-Profile-Based Lifetime Prediction for a SiC MOSFET Power Module using a Multi-Step Condition-Mapping Simulation Strategy

    AU - Ceccarelli, Lorenzo

    AU - Kotecha, Ramchandra

    AU - Bahman, Amir Sajjad

    AU - Iannuzzo, Francesco

    AU - Mantooth, Alan

    PY - 2019/1/15

    Y1 - 2019/1/15

    N2 - The reliability analysis and lifetime prediction for SiC-based power modules is crucial in order to fulfill the design specifications for next-generation power converters. This paper presents a fast mission-profile-based simulation strategy for a commercial 1.2 kV all-SiC power module used in a photovoltaic (PV) inverter topology. The approach relies on a fast condition-mapping simulation structure and the detailed electro-thermal modeling of the module topology and devices. Both parasitic electrical elements and thermal impedance network are extracted from the finite-element analysis of the module geometry. The use of operating conditions mapping and look-up tables enables the simulation of very long timescales in only a few minutes, preserving at the same time the accuracy of circuit-based simulations. The accumulated damage related to thermo-mechanical stress on the module is determined analytically and a simple consumed lifetime calculation is performed for two different mission profiles and compared in different operating conditions.

    AB - The reliability analysis and lifetime prediction for SiC-based power modules is crucial in order to fulfill the design specifications for next-generation power converters. This paper presents a fast mission-profile-based simulation strategy for a commercial 1.2 kV all-SiC power module used in a photovoltaic (PV) inverter topology. The approach relies on a fast condition-mapping simulation structure and the detailed electro-thermal modeling of the module topology and devices. Both parasitic electrical elements and thermal impedance network are extracted from the finite-element analysis of the module geometry. The use of operating conditions mapping and look-up tables enables the simulation of very long timescales in only a few minutes, preserving at the same time the accuracy of circuit-based simulations. The accumulated damage related to thermo-mechanical stress on the module is determined analytically and a simple consumed lifetime calculation is performed for two different mission profiles and compared in different operating conditions.

    KW - SiC MOSFET

    KW - lifetime estimation

    KW - Reliability Analysis

    KW - Electrothermal simulation

    KW - modeling

    M3 - Journal article

    JO - I E E E Transactions on Power Electronics

    JF - I E E E Transactions on Power Electronics

    SN - 0885-8993

    ER -