Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy

Lorenzo Ceccarelli*, Ramchandra M. Kotecha, Amir Sajjad Bahman, Francesco Iannuzzo, Homer Alan Mantooth

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16 Citationer (Scopus)
242 Downloads (Pure)

Abstrakt

The reliability analysis and lifetime prediction for SiC-based power modules is crucial in order to fulfill the design specifications for next-generation power converters. This paper presents a fast mission-profile-based simulation strategy for a commercial 1.2-kV all-SiC power module used in a photovoltaic inverter topology. The approach relies on a fast condition-mapping simulation structure and the detailed electro-thermal modeling of the module topology and devices. Both parasitic electrical elements and thermal impedance network are extracted from the finite-element analysis of the module geometry. The use of operating conditions mapping and look-up tables enables the simulation of very long timescales in only a few minutes, preserving at the same time the accuracy of circuit-based simulations. The accumulated damage related to thermo-mechanical stress on the module is determined analytically, and a simple consumed lifetime calculation is performed for two different mission profiles and compared in different operating conditions.
OriginalsprogEngelsk
Artikelnummer8616890
TidsskriftIEEE Transactions on Power Electronics
Vol/bind34
Udgave nummer10
Sider (fra-til)9698-9708
Antal sider11
ISSN0885-8993
DOI
StatusUdgivet - okt. 2019

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