Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy

Lorenzo Ceccarelli*, Ramchandra M. Kotecha, Amir Sajjad Bahman, Francesco Iannuzzo, Homer Alan Mantooth

*Kontaktforfatter

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Resumé

The reliability analysis and lifetime prediction for SiC-based power modules is crucial in order to fulfill the design specifications for next-generation power converters. This paper presents a fast mission-profile-based simulation strategy for a commercial 1.2-kV all-SiC power module used in a photovoltaic inverter topology. The approach relies on a fast condition-mapping simulation structure and the detailed electro-thermal modeling of the module topology and devices. Both parasitic electrical elements and thermal impedance network are extracted from the finite-element analysis of the module geometry. The use of operating conditions mapping and look-up tables enables the simulation of very long timescales in only a few minutes, preserving at the same time the accuracy of circuit-based simulations. The accumulated damage related to thermo-mechanical stress on the module is determined analytically, and a simple consumed lifetime calculation is performed for two different mission profiles and compared in different operating conditions.
OriginalsprogEngelsk
Artikelnummer8616890
TidsskriftIEEE Transactions on Power Electronics
Vol/bind34
Udgave nummer10
Sider (fra-til)9698-9708
Antal sider11
ISSN0885-8993
DOI
StatusUdgivet - okt. 2019

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Topology
Power converters
Reliability analysis
Specifications
Finite element method
Geometry
Networks (circuits)
Hot Temperature

Citer dette

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title = "Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy",
abstract = "The reliability analysis and lifetime prediction for SiC-based power modules is crucial in order to fulfill the design specifications for next-generation power converters. This paper presents a fast mission-profile-based simulation strategy for a commercial 1.2-kV all-SiC power module used in a photovoltaic inverter topology. The approach relies on a fast condition-mapping simulation structure and the detailed electro-thermal modeling of the module topology and devices. Both parasitic electrical elements and thermal impedance network are extracted from the finite-element analysis of the module geometry. The use of operating conditions mapping and look-up tables enables the simulation of very long timescales in only a few minutes, preserving at the same time the accuracy of circuit-based simulations. The accumulated damage related to thermo-mechanical stress on the module is determined analytically, and a simple consumed lifetime calculation is performed for two different mission profiles and compared in different operating conditions.",
keywords = "Electrothermal simulation, Multichip modules, Power MOSFETs, Predictive models, Reliability, Silicon carbide",
author = "Lorenzo Ceccarelli and Kotecha, {Ramchandra M.} and Bahman, {Amir Sajjad} and Francesco Iannuzzo and Mantooth, {Homer Alan}",
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Mission-Profile-Based Lifetime Prediction for a SiC mosfet Power Module Using a Multi-Step Condition-Mapping Simulation Strategy. / Ceccarelli, Lorenzo; Kotecha, Ramchandra M.; Bahman, Amir Sajjad; Iannuzzo, Francesco; Mantooth, Homer Alan.

I: IEEE Transactions on Power Electronics, Bind 34, Nr. 10, 8616890, 10.2019, s. 9698-9708.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

TY - JOUR

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AU - Kotecha, Ramchandra M.

AU - Bahman, Amir Sajjad

AU - Iannuzzo, Francesco

AU - Mantooth, Homer Alan

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KW - Multichip modules

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