TY - GEN
T1 - Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers
AU - Zhao, Hongbo
AU - Dalal, Dipen Narendra
AU - Wang, Xiongfei
AU - Jørgensen, Jannick Kjær
AU - Uhrenfeldt, Christian
AU - Beczkowski, Szymon Michal
AU - Munk-Nielsen, Stig
PY - 2019/10
Y1 - 2019/10
N2 - This paper proposes a physics-level modeling method for analyzing the primary to secondary-side (common-mode) parasitic capacitance of the transformer for the Medium-voltage SiC MOSFETs gate drivers. The lumped circuit-based physics-model of the turn-to-turn capacitance, turn-to-core capacitance, and self capacitance of the core are derived, and it is found that the turn-to-core capacitance mainly contributes to the total equivalent parasitic common-mode capacitance. The measured common-mode impedance of the transformer shows high agreements with the calculated value, where the accuracy of the proposed modeling method can be proved based on the experimental results.
AB - This paper proposes a physics-level modeling method for analyzing the primary to secondary-side (common-mode) parasitic capacitance of the transformer for the Medium-voltage SiC MOSFETs gate drivers. The lumped circuit-based physics-model of the turn-to-turn capacitance, turn-to-core capacitance, and self capacitance of the core are derived, and it is found that the turn-to-core capacitance mainly contributes to the total equivalent parasitic common-mode capacitance. The measured common-mode impedance of the transformer shows high agreements with the calculated value, where the accuracy of the proposed modeling method can be proved based on the experimental results.
KW - Common-mode capacitance
KW - SiC MOSFETs gate drivers
KW - Lumped circuit-based physics-level model
KW - Turn-to-core capacitance
U2 - 10.1109/IECON.2019.8926673
DO - 10.1109/IECON.2019.8926673
M3 - Article in proceeding
T3 - Proceedings of the Annual Conference of the IEEE Industrial Electronics Society
BT - Proceedings of IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society
PB - IEEE Press
CY - Lisbon, Portugal
T2 - IECON 2019 - 45th Annual Conference of the IEEE Industrial Electronics Society
Y2 - 14 October 2019 through 17 October 2019
ER -