TY - JOUR
T1 - Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT
AU - Xue, P.
AU - Fu, G.
AU - Zhang, D.
PY - 2017
Y1 - 2017
N2 - In this study, a physics-based compact model for high-speed buffer layer insulated gate bipolar transistor (IGBT) is proposed. The model utilizes the 1-D Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. Based on the improved understanding on the inductive switching behavior of a high-speed buffer layer IGBT, the ADE is solved for all injection levels instead of high-level injection only as usually done. Assuming high-level injection condition in the buffer layer, the excess carrier transport, redistribution and recombination in the buffer layer are redescribed. Moreover, some physical characteristics such as the low conductivity of N-base at turn-on transient and free holes appeared in the depletion layer during turn-off process are also considered in the model. Finally, the double-pulse switching tests for a commercial field stop IGBT and a light punch-through carrier-stored trench bipolar transistor are used to validate the proposed model. The simulation results are compared with experiment results and good agreement is obtained.
AB - In this study, a physics-based compact model for high-speed buffer layer insulated gate bipolar transistor (IGBT) is proposed. The model utilizes the 1-D Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. Based on the improved understanding on the inductive switching behavior of a high-speed buffer layer IGBT, the ADE is solved for all injection levels instead of high-level injection only as usually done. Assuming high-level injection condition in the buffer layer, the excess carrier transport, redistribution and recombination in the buffer layer are redescribed. Moreover, some physical characteristics such as the low conductivity of N-base at turn-on transient and free holes appeared in the depletion layer during turn-off process are also considered in the model. Finally, the double-pulse switching tests for a commercial field stop IGBT and a light punch-through carrier-stored trench bipolar transistor are used to validate the proposed model. The simulation results are compared with experiment results and good agreement is obtained.
KW - buffer layers
KW - insulated gate bipolar transistors
KW - semiconductor device models
KW - inductive switching characteristics
KW - high-speed buffer layer IGBT
KW - insulated gate bipolar transistor
KW - ambipolar diffusion equation
KW - excess carrier transport
KW - excess carrier redistribution
KW - excess carrier recombination
KW - double-pulse switching tests
KW - light punch-through carrier-stored trench bipolar transistor
KW - Insulated gate bipolar transistors
KW - Buffer layers
KW - Capacitance
KW - Mathematical model
KW - Integrated circuits
KW - Switches
KW - Logic gates
KW - Field stop (FS) IGBT
KW - insulated gate bipolar transistor (IGBT)
KW - light punch-through (LPT)
KW - carrier-stored trench bipolar transistor (CSTBT)
KW - physics-based IGBT model
KW - power semiconductor modeling
U2 - 10.1109/TPEL.2016.2570838
DO - 10.1109/TPEL.2016.2570838
M3 - Journal article
SN - 1941-0107
VL - 32
SP - 3075
EP - 3087
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
IS - 4
ER -