Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT

P. Xue*, G. Fu, D. Zhang

*Kontaktforfatter

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

40 Citationer (Scopus)

Abstract

In this study, a physics-based compact model for high-speed buffer layer insulated gate bipolar transistor (IGBT) is proposed. The model utilizes the 1-D Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. Based on the improved understanding on the inductive switching behavior of a high-speed buffer layer IGBT, the ADE is solved for all injection levels instead of high-level injection only as usually done. Assuming high-level injection condition in the buffer layer, the excess carrier transport, redistribution and recombination in the buffer layer are redescribed. Moreover, some physical characteristics such as the low conductivity of N-base at turn-on transient and free holes appeared in the depletion layer during turn-off process are also considered in the model. Finally, the double-pulse switching tests for a commercial field stop IGBT and a light punch-through carrier-stored trench bipolar transistor are used to validate the proposed model. The simulation results are compared with experiment results and good agreement is obtained.
OriginalsprogEngelsk
TidsskriftIEEE Transactions on Power Electronics
Vol/bind32
Udgave nummer4
Sider (fra-til)3075-3087
Antal sider13
ISSN1941-0107
DOI
StatusUdgivet - 2017
Udgivet eksterntJa

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