TY - CHAP
T1 - Modern insulated gate bipolar transistor (IGBT) gate driving methods for robustness and reliability
AU - Luo, Haoze
AU - Li, Wuhua
AU - Iannuzzo, Francesco
N1 - Publisher Copyright:
© The Institution of Engineering and Technology 2020.
PY - 2020/1/1
Y1 - 2020/1/1
N2 - This chapter has presented an overview of state-of-the-art advanced gate driver techniques for enhancing the reliability of IGBT modules. Broadly speaking, methods can be classified in detection methods, optimization methods, and protection methods. Additionally, optimization and protection methods can be roughly classified in simple (and cheap) and advanced (even more expensive). Simple methods, like the open -loop and passivity -based ones, perform well in normal applications, but advanced methods, like closed -loop control strategies, even if more expensive, are necessary for special applications, like high -power IGBT modules. In the near future, benefiting from the increase of data processing speed and reducing the cost of digital controllers, the advanced techniques discussed in this chapter could become more and more affordable and popular, even in low-cost applications, for both considerably reducing short-term and long-term reliability issues. In fact, basing on a large number of different failure mechanisms, more and more complex strategies will be needed including most of the mature detection and protection methods toward the so-called reliability -oriented gate driver design.
AB - This chapter has presented an overview of state-of-the-art advanced gate driver techniques for enhancing the reliability of IGBT modules. Broadly speaking, methods can be classified in detection methods, optimization methods, and protection methods. Additionally, optimization and protection methods can be roughly classified in simple (and cheap) and advanced (even more expensive). Simple methods, like the open -loop and passivity -based ones, perform well in normal applications, but advanced methods, like closed -loop control strategies, even if more expensive, are necessary for special applications, like high -power IGBT modules. In the near future, benefiting from the increase of data processing speed and reducing the cost of digital controllers, the advanced techniques discussed in this chapter could become more and more affordable and popular, even in low-cost applications, for both considerably reducing short-term and long-term reliability issues. In fact, basing on a large number of different failure mechanisms, more and more complex strategies will be needed including most of the mature detection and protection methods toward the so-called reliability -oriented gate driver design.
KW - Bipolar transistors
KW - Closed-loop control strategies
KW - Cost reduction
KW - Data processing speed
KW - Detection methods
KW - Digital controllers
KW - Failure mechanisms
KW - High-power IGBT modules
KW - IGBT module reliability
KW - Insulated gate bipolar transistors
KW - Insulated gate field effect transistors
KW - Long-term reliability reduction
KW - Modern insulated gate bipolar transistor gate driving methods
KW - Optimisation
KW - Optimisation techniques
KW - Optimization methods
KW - Protection methods
KW - Reliability
KW - Reliability-oriented gate driver design
KW - Semiconductor device reliability
KW - Short-term reliability reduction
UR - http://www.scopus.com/inward/record.url?scp=85117972718&partnerID=8YFLogxK
U2 - 10.1049/PBPO152E_ch13
DO - 10.1049/PBPO152E_ch13
M3 - Book chapter
AN - SCOPUS:85117972718
SN - 9781785619175
SP - 417
EP - 449
BT - Modern Power Electronic Devices
PB - Institution of Engineering and Technology
ER -