@inproceedings{39985ba8ee1d4ba384cb873809c91817,
title = "Online junction temperature measurement using peak gate current",
abstract = "A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current and fluctuates with temperature due to the temperature-dependent resistance of the internal gate resistance. A measurement circuit can be integrated into a gate driver with no disruption to converter operation. The method is immune to dependence on load current, and allows autonomous and high frequency measurements through a measurement circuit directly controlled via the gate signal.",
keywords = "IGBT, Junction Temperature, Measurement, MOSFET, Power Semiconductors, Reliability",
author = "Nick Baker and Stig Munk-Nielsen and Francesco Iannuzzo and Marco Liserre",
year = "2015",
month = mar,
doi = "10.1109/APEC.2015.7104511",
language = "English",
isbn = "978-1-4799-6735-3",
series = "I E E E Applied Power Electronics Conference and Exposition. Conference Proceedings",
publisher = "IEEE Press",
pages = "1270--1275",
booktitle = "Proceedings of the 2015 IEEE Applied Power Electronics Conference and Exposition (APEC)",
note = "30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015, IEEE APEC 2015 ; Conference date: 15-03-2015 Through 19-03-2015",
}