Online junction temperature measurement using peak gate current

Nick Baker, Stig Munk-Nielsen, Francesco Iannuzzo, Marco Liserre

Publikation: Bidrag til bog/antologi/rapport/konference proceedingKonferenceartikel i proceedingForskningpeer review

36 Citationer (Scopus)

Abstract

A new method for junction temperature measurement of MOS-gated power semiconductor switches is presented. The measurement method involves detecting the peak voltage over the external gate resistor of an IGBT or MOSFET during turn-on. This voltage is directly proportional to the peak gate current and fluctuates with temperature due to the temperature-dependent resistance of the internal gate resistance. A measurement circuit can be integrated into a gate driver with no disruption to converter operation. The method is immune to dependence on load current, and allows autonomous and high frequency measurements through a measurement circuit directly controlled via the gate signal.
OriginalsprogEngelsk
TitelProceedings of the 2015 IEEE Applied Power Electronics Conference and Exposition (APEC)
Antal sider6
ForlagIEEE Press
Publikationsdatomar. 2015
Sider1270-1275
Artikelnummer7104511
ISBN (Trykt)978-1-4799-6735-3
DOI
StatusUdgivet - mar. 2015
Begivenhed30th Annual IEEE Applied Power Electronics Conference and Exposition - Charlotte, USA
Varighed: 15 mar. 201519 mar. 2015

Konference

Konference30th Annual IEEE Applied Power Electronics Conference and Exposition
Land/OmrådeUSA
ByCharlotte
Periode15/03/201519/03/2015
NavnI E E E Applied Power Electronics Conference and Exposition. Conference Proceedings
ISSN1048-2334

Emneord

  • IGBT
  • Junction Temperature
  • Measurement
  • MOSFET
  • Power Semiconductors
  • Reliability

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